MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
CM1000DU-34NF
q
I
C ................................................................
1000A
q
V
CES ..........................................................
1700V
q
Insulated
Type
q
2-elements in a pack
APPLICATION
General purpose inverters Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
A,B HOUSING Type
(J. S. T. Mfg. Co. Ltd)
A : VHR-2N
B : VHR-5N
Tc measured point
(The side of Cu
base plate)
150
137.5
±0.25
42
14 14
Tc measured point
(The side of Cu
12 2
base plate)
11 19
38
±0.25
74
±0.25
34.6
+1.0
–0.5
4
15.7
A
G1
E1
G2
E2
C1
10.5
B
8-f6.5
MOUNTING HOLES
E2
C1
15.7
5.5
18
38
±0.25
74
±0.25
PPS
21
42.5
±0.25
129.5
166
9-M6 NUTS 12
14 14 14 14 14 14
42
42
25.1
L A B E L
C2
C2E1
E2
C1
C1
CIRCUIT DIAGRAM
G1 E1
E2 G2
C2E1
C2
1.9
±0.2
34.6
+1.0
–0.5
Sep. 2004
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
*3
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
T
C
’ = 104°C
Pulse
T
C
= 25°C
Pulse
T
C
’ = 25°C
Conditions
Ratings
1700
±20
1000
2000
1000
2000
8900
–40 ~ +150
–40 ~ +125
3500
3.5 ~ 4.5
3.5 ~ 4.5
1400
Unit
V
V
A
A
W
°C
°C
V
N•m
N•m
g
(Note 2)
(Note 2)
Main terminal to base plate, AC 1 min.
Main terminal M6
Mounting holes M6
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
(chip)
R
(lead)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
(chip)
Parameter
Collector cutoff current
Test conditions
V
CE
= V
CES
, V
GE
= 0V
Min.
—
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.47
Limits
Typ.
—
7
—
2.2
2.45
0.286
—
—
—
6000
—
—
—
—
—
90
2.3
—
—
0.016
—
Max.
1
8.5
5
2.8
—
—
220
25
4.7
—
600
150
900
200
450
—
3
0.014
0.023
—
4.7
Unit
mA
V
µA
V
mΩ
nF
nC
Gate-emitter threshold voltage I
C
= 100mA, V
CE
= 10V
Gate leakage current
Collector-emitter saturation voltage
(without lead resistance)
Module lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
(without lead resistance)
Thermal resistance
*1
Contact thermal
External gate resistance
resistance
*2
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 1000A, V
GE
= 15V
T
j
= 125°C
Ic = 1000A, terminal-chip
V
CE
= 10V
V
GE
= 0V
V
CC
= 1000V, I
C
= 1000A, V
GE
= 15V
V
CC
= 1000V, I
C
= 1000A
V
GE1
= V
GE2
= 15V
R
G
= 0.47Ω, Inductive load switching operation
I
E
= 1000A
(Note 4)
ns
ns
µC
V
°C/W
Ω
I
E
= 1000A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied (1/2 module)
R
th(j-c’)
Q
R
th(j-c’)
R
R
th(c-f)
R
G
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) dose not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
*
1 : Tc measured point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
*
3 : The operation temperature is restrained by the permission temperature of female connector.
Sep. 2004
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2000
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
2000
V
CE
= 10V
COLLECTOR CURRENT (A)
V
GE
= 20V
15V
13V
T
j
= 25°C
1600
12V
1600
1200
11V
1200
800
800
400
8V
0
0
2
4
6
8
10V
9V
10
400
T
j
= 25°C
T
j
= 125°C
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T
j
= 25°C
V
GE
= 15V
4
8
I
C
= 400A
I
C
= 1000A
I
C
= 2000A
3
6
2
4
1
T
j
= 25°C
T
j
= 125°C
0
0
500
1000
1500
2000
2
0
0
4
8
12
16
20
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
10
4
EMITTER CURRENT I
E
(A)
7
5
3
2
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
10
3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
C
ies
10
2
10
3
7
5
3
2
10
1
C
oes
10
0
C
res
T
j
= 25°C
T
j
= 125°C
1
2
3
4
10
2
V
GE
= 0V
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Sep. 2004
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
4
7
5
3
2
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10
4
7
5
3
2
SWITCHING TIMES (ns)
10
3
7
5
3
2
t
d(off)
t
d(on)
t
f
t
r
Conditions:
V
CC
= 1000V
V
GE
=
±15V
R
G
= 0.47Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
4
10
3
7
5
3
2
I
rr
t
rr
10
2
7
5
3
2
10
1 2
10
2
3
5 7
10
3
10
2 2
10
Conditions:
V
CC
= 1000V
V
GE
=
±15V
R
G
= 0.47Ω
T
j
= 25°C
Inductive load
2
3
5 7
10
4
2
3
5 7
10
3
COLLECTOR CURRENT I
C
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c’)
(°C/W)
EMITTER CURRENT I
E
(A)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
GATE-EMITTER VOLTAGE V
GE
(V)
Single Pulse
IGBT part:
Per unit base = R
th(j–c’)
= 0.014°C/W
FWDi part:
Per unit base = R
th(j–c’)
= 0.023°C/W
10
0
7
5
3
2
7
5
3
2
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
I
C
= 1000A
16
V
CC
= 800V
3
2
12
V
CC
= 1000V
10
–1
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
8
10
–2
10
–3
7
5 T
C
’ measured
3 point is just
2 under the chips
10
–2
4
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
0
0
2000
4000
6000
8000
10000
GATE CHARGE Q
G
(nC)
I
C
-E
SW
(TYPICAL)
10
3
7
5
3
2
R
G
-E
SW
(TYPICAL)
10
3
7
5
E
on
E
off
Eon
,
Eoff
,
Err (mJ/pulse)
Eon
,
Eoff
,
Err (mJ/pulse)
E
rr
E
off
E
on
3
2
10
2
7
5
3
2
E
rr
10
2
7
5
3
2
10
1
7
5
3
2
10
0 2
10
Conditions:
V
CC
= 1000V
V
GE
=
±15V
R
G
= 0.47Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
3
2
3
5 7
10
4
10
1
Conditions:
V
CC
= 1000V
V
GE
=
±15V
I
C
= 1000A
T
j
= 125°C
Inductive load
0
1
2
R
G
(Ω)
Sep. 2004
3
4
5
I
C
(A)
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