Ordering number : ENA0899
2SC6083
SANYO Semiconductors
DATA SHEET
2SC6083
Features
•
•
•
•
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown voltage.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, duty cycle≤10%
Conditions
Ratings
700
350
8
1
2
0.5
0.6
150
--55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
hFE3
fT
Cob
Conditions
VCB=350V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=0.1A
VCE=5V, IC=0.5A
VCE=5V, IC=1mA
VCE=10V, IC=0.1A
VCB=10V, f=1MHz
100
10
60
20
8
MHz
pF
Ratings
min
typ
max
10
10
200
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80107CB TI IM TC-00000829 No. A0899-1/4
2SC6083
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
700
350
8
1.0
2.5
0.3
Ratings
min
typ
max
0.8
1.5
Unit
V
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7524-004
4.0
2.2
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
RB
1.8
3.0
RL
0.4
0.5
0.6
+
100µF
15.0
0.4
VBE= --5V
+
470µF
VCC=200V
0.4
1
1.3
0.7
2
3
1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
3.0
3.8
0.7
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
IC -- VCE
2
m
00
A
1.0
0.9
IC -- VBE
VCE=5V
150mA
100mA
0.8
0.7
0.6
0.5
0.4
Collector Current, IC -- A
30mA
20mA
70mA
A
80m
90mA
0.2
0.1
IB=0mA
4
6
8
10
IT12786
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT12787
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
Ta=
120
0.3
--40
°
C
25
°
C
50mA 40mA
60mA
°
C
10mA
Collector Current, IC -- A
No. A0899-2/4
2SC6083
5
3
2
hFE -- IC
VCE=5V
5
3
2
hFE -- IC
Ta=120
°
C
25
°
C
DC Current Gain, hFE
DC Current Gain, hFE
VC
100
7
5
3
2
--40
°
C
100
7
5
3
2
.0V
=5
E
2.0
.0V
V 1
0.7
V
10
7
5
3
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
IT12788
10
7
5
3
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
IT12789
Collector Current, IC -- A
3
2
VCE(sat) -- IC
Collector Current, IC -- A
10
7
5
3
2
1.0
5
3
2
0.1
7
5
0.001
VCE(sat) -- IC
IC / IB=5
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
1.0
7
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
0.1
7
5
3
2
0.001
2
3
5 7 0.01
2
3
25
°
C
=
Ta
--4
0
°
C
25
°
C
5 7 0.1
2
3
Collector Current, IC -- A
3
5 7 1.0
IT12790
2
3
5 7 0.01
2
3
5 7 0.1
Ta=
1
1
°
C
20
20
°
C
--40
°
C
2
3
5 7 1.0
IT12791
7
VBE(sat) -- IC
Collector Current, IC -- A
1.0
SW Time -- IC
IC / IB=5
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Switching Time, SW Time --
µs
2
7
tst
g
5
IC / IB1=10
IB2 / IB1=10
R load
1.0
7
5
Ta= --40
°
C
25
°
C
120
°
C
3
tf
2
3
2
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
5
3
2
Forward Bias A S O
ICP=2A
IC=1A
Collector Current, IC -- A
5 7 1.0
IT12792
0.1
0.1
2
3
5
7
3
2
1.0
Reverse Bias A S O
L=500
µ
H
IB2= --0.2A
Tc=25
°
C
Single pulse
Collector Current, IC -- A
1.0
IT12793
µ
s
00
=1
s
PT
00
µ
3
Collector Current, IC -- A
Collector Current, IC -- A
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
7
5
3
2
0.1
7
5
3
1m
s
10
DC
op
er
ati
m
s
on
0.001
0.1
Ta=25
°
C
Single pulse
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
5 7
2
0.01
100
2
3
5
7
Collector-to-Emitter Voltage, VCE -- V
IT12794
Collector-to-Emitter Voltage, VCE -- V
1000
IT12795
No. A0899-3/4
2SC6083
700
PC -- Ta
Collector Dissipation, PC -- mW
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT12796
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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above.
This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0899-4/4
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