Ordering number : ENA0578A
2SC6118LS
SANYO Semiconductors
DATA SHEET
2SC6118LS
Features
•
•
•
•
•
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
1500
800
6
8
20
2.0
35
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
ICBO
ICES
VCEO(sus)
IEBO
Conditions
VCB=800V, IE=0A
VCE=1500V, RBE=0Ω
IC=100mA, IB=0A
VEB=4V, IC=0A
800
40
130
Ratings
min
typ
max
10
1.0
Unit
µA
mA
V
mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82207 TI IM / N2906KC TI IM TC-00000188 No. A0578-1/4
2SC6118LS
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Fall Time
Symbol
VCE(sat)
VBE(sat)
hFE1
hFE2
VF
tf
Conditions
IC=4.5A, IB=0.9A
IC=4.5A, IB=0.9A
VCE=5V, IC=1A
VCE=5V, IC=5A
IEC=7A
IC=3A, IB1=0.6A, IB2=--1.2A
10
5.3
7.5
2
0.2
V
µs
Ratings
min
typ
max
2
1.5
Unit
V
V
Package Dimensions
unit : mm (typ)
7509-003
10.0
3.2
3.5
7.2
Switching Time Test Circuit
4.5
2.8
PW=20µs
D.C.≤1%
INPUT
50Ω
IB1
OUTPUT
IB2
RB
VR
+
100µF
VBE= --5V
+
470µF
VCC=200V
RL=66.7Ω
16.1
16.0
0.9
1.2
0.75
14.0
3.6
1.2
0.7
1 2 3
2.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
2.55
2.55
0.6
8
7
IC -- VCE
A
2.0
1.8A
9
8
IC -- VBE
VCE=5V
Collector Current, IC -- A
6
5
4
3
2
1.6A
1.4A
1.2A
Collector Current, IC -- A
1.0A
0.8A
0.6A
0.4A
0.2A
7
6
5
4
3
Ta=
1
0
0.2
0.4
0.6
1
0
0
1
2
3
4
5
6
7
8
1
IB=0A
9
10
0
0.8
1.0
1.2
1.4
IT01801
Collector-to-Emitter Voltage, VCE -- V
5
3
2
IT01800
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
IC / IB=5
Ta=--40
°
C
Ta=
--4
25
°
C
0
°
C
VCE=5V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
Ta
2
=1
2
1.0
7
5
3
2
10
7
5
3
2
°
C
-40
0.1
7
5
120
°
C
2
3
5
7
1.0
2
3
5
10
IT01803
7
1.0
0.1
2
3
5
7
1.0
2
3
5
7
10
3
0.1
Collector Current, IC -- A
IT01802
Collector Current, IC -- A
No. A0578-2/4
25
°
C
°
C
25
120
°
C
0
°
C
3
25
°
0.05A
C
-40
°
C
2
20
°
C
2SC6118LS
10
7
SW Time -- IC
Switching Time, SW Time --
µs
tstg
Switching Time, SW Time --
µs
5
3
2
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
10
7
5
3
2
SW Time -- IB2
VCC=200V
IC=3A
IB1=0.6A
R load
tst
g
1.0
7
5
3
2
1.0
7
5
tf
3
2
0.1
0.1
tf
0.1
0.1
2
3
5
7
1.0
2
3
5
10
IT11890
7
2
3
5
7
1.0
2
3
5
7
10
IT11891
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Forward Bias A S O
ICP=20A
IC=8A
Collector Current, IC -- A
3
2
Reverse Bias A S O
L=500
µ
H
IB2= --1.0A
Tc=25
°
C
Single pulse
Base Current, IB2 -- A
10
30
0
µ
Collector Current, IC -- A
1m
DC
0
µ
Collector Current, IC -- A
s
10
7
5
3
2
1.0
7
5
3
2
0.1
10
s
s
10
ms
op
er
ati
on
0.01
7
5
3
Tc=25
°
C
2
Single pulse
0.001
2 3
5 7 10
1.0
2
3
5 7 100
2
3
5 7 1000
IT11898
2
3
5
7 100
2
3
5
7 1000
2
3
5
Collector-to-Emitter Voltage, VCE -- V
2.5
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
40
35
IT11899
PC -- Tc
Collector Dissipation, PC -- W
2.0
Collector Dissipation, PC -- W
30
25
20
15
10
5
1.5
No
1.0
he
at
s
in
k
0.5
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT11894
Case Temperature, Tc --
°C
IT11900
No. A0578-3/4
2SC6118LS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0578-4/4
嵌入式系统
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