Ordering number : ENA0878
2SC6106
SANYO Semiconductors
DATA SHEET
2SC6106
Features
•
•
•
•
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown voltage and high reliability.
Ultrahigh-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
PW≤300µs, duty cycle≤10%
Tc=25°C
Conditions
Ratings
1000
500
7
4
8
1
30
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=500V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=0.3A
VCE=5V, IC=2.0A
VCE=10V, IC=0.3A
VCB=10V, f=1MHz
40
8
18
40
MHz
pF
Ratings
min
typ
max
10
10
80
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70407KB TI IM TC-00000387 No. A0878-1/4
2SC6106
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
VCC=200V, 5IB1=-
-2.5IB2=IC=2A, RL=100Ω
VCC=200V, 5IB1=-
-2.5IB2=IC=2A, RL=100Ω
VCC=200V, 5IB1=-
-2.5IB2=IC=2A, RL=100Ω
1000
500
8
0.5
3.0
0.3
Ratings
min
typ
max
1.0
1.5
Unit
V
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7518-003
6.5
5.0
2.3
1.5
Package Dimensions
unit : mm (typ)
7003-003
6.5
5.0
2.3
0.5
4
4
7.0
1.5
0.5
5.5
5.5
7.0
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
0.85
0.5
1.2
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
IB1
OUTPUT
IB2
VR
RB
PW=20µs
D.C.≤1%
INPUT
RL
100Ω
+
470µF
VCC=200V
50Ω
+
100µF
VBE= --5V
4.0
3.5
IC -- VCE
500mA
400mA
Collector Current, IC -- A
4
IC -- VBE
VCE=5V
Collector Current, IC -- A
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
300mA
200mA
100mA
50mA
20mA
3
2
Ta=
1
1
20
°
C
25
°
C
IB=0mA
9
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT12742
Collector-to-Emitter Voltage, VCE -- V
IT12741
Base-to-Emitter Voltage, VBE -- V
--40
°
C
No. A0878-2/4
2SC6106
2
hFE -- IC
VCE=5V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
5
3
2
1.0
7
5
3
2
0.1
7
5
VCE(sat) -- IC
IC / IB=5
100
7
Ta=120
°
C
DC Current Gain, hFE
5
3
2
--40
°
C
10
7
5
3
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7
IT12743
Ta=
-
-4
0
°
C
0
--4
C
25
°
120
°
C
25
°
C
2
3
5
7 0.1
2
3
5
3
2
0.01
7 1.0
Ta=1
20
°
C
25
°
C
°
C
2
3
5
7
Collector Current, IC -- A
3
VBE(sat) -- IC
Collector Current, IC -- A
10
7
5
IT12744
SW Time -- IC
IC / IB=5
Switching Time, SW Time --
µs
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
3
2
1.0
7
5
3
2
0.1
7
5
tstg
VCC=200V
IC/IB2= 5
IB2/IB1= 2.5
1.0
7
5
Ta= --40
°
C
25
°
C
120
°
C
tf
3
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
2
10
7
5
Forward Bias A S O
ICP=8A
IC=4A
P
C=
30
1m
Collector Current, IC -- A
5 7 10
IT12745
3
0.1
2
3
5
7
1.0
2
3
5
2
Reverse Bias A S O
Collector Current, IC -- A
7
10
IT12746
<
50
µ
s
10
Collector Current, IC -- A
10
7
5
3
2
1.0
7
5
3
Collector Current, IC -- A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
µ
s
W
DC
s
10
ms
tio
n
era
op
0.01
1.0
Tc=25
°
C
Single pulse
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT12747
2
0.1
1.0
Tc=25
°
C
IB2= --0.6A
L=500mH
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
2
Collector-to-Emitter Voltage, VCE -- V
1.2
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
35
IT12748
PC -- Tc
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
1.0
30
25
0.8
No
0.6
he
20
at
sin
k
15
0.4
10
0.2
5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
0
Ambient Temperature, Ta --
°C
IT12749
Case Temperature, Tc --
°C
IT12750
No. A0878-3/4
2SC6106
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of July, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0878-4/4
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