Ordering number : ENA0463
2SA2197 / 2SC6102
SANYO Semiconductors
DATA SHEET
2SA2197 / 2SC6102
Applications
•
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
( ) : 2SA2197
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--30)40
(--)30
(-
-)6
(-
-)7
(-
-)9
(--)1.2
1
10
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(-
-)500mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
Ratings
min
typ
max
(--)0.1
(--)0.1
200
(250)290
(52)40
560
MHz
pF
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92706EA MS IM TC-00000207 No. A0463-1/5
2SA2197 / 2SC6102
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=(--)2.5A, IB=(--)50mA
VCE=(--)2.5V, IB=(--)50mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--30)40
(--)30
(--)6
(30)30
(190)320
(17)14
Ratings
min
typ
(--160)125
(--)0.84
max
(--240)185
(--)1.2
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7515-002
8.0
3.0
4.0
2.7
Switching Time Test Circuit
IB1
OUTPUT
IB2
VR
RB
+
470µF
VCC=12V
PW=20µs
D.C.≤1%
INPUT
50Ω
RL
+
7.0
11.0
1.6
0.8
0.8
0.6
1.5
100µF
VBE= --5V
0.5
15.5
3.0
20IB1= --20IB2=IC=2.5A
For PNP, the polarity is reversed.
1
2
3
1.2
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
2.4
4.8
--7
IC -- VCE
2SA2197
7
IC -- VCE
2SC6102
50m
A
--50mA
--40mA
--30mA
--25mA
Collector Current, IC -- A
6
40m
A
--6
30mA
25mA
Collector Current, IC -- A
--5
5
20mA
15mA
4
--4
--20mA
--15mA
--3
3
10mA
--10mA
--2
2
--5mA
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
5mA
1
IB=0mA
--1.8
--2.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IB=0mA
1.8
2.0
Collector-to-Emitter Voltage, VCE -- V
IT11478
Collector-to-Emitter Voltage, VCE -- V
IT11479
No. A0463-2/5
2SA2197 / 2SC6102
--7
IC -- VBE
2SA2197
VCE= --2V
Collector Current, IC -- A
7
IC -- VBE
2SC6102
VCE=2V
--6
6
Collector Current, IC -- A
--5
5
--4
4
--3
3
--2
2
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT11298
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT11305
Base-to-Emitter Voltage, VBE -- V
1000
7
5
Base-to-Emitter Voltage, VBE -- V
1000
7
5
hFE -- IC
2SA2197
VCE= --2V
Ta=75
°C
hFE -- IC
2SC6102
VCE=2V
DC Current Gain, hFE
DC Current Gain, hFE
3
25
°C
3
Ta=75
°C
25
°
C
2
--25°C
2
--25
°C
100
7
5
--0.01
100
7
5
0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
3
5 7 --10
IT11299
2
3
5 7 0.1
2
3
Ta=7
5
°
C
25
°
C
--25
°
C
5 7 1.0
2
Ta=7
5
25
°
C
--25
°
C
°
C
3
Cob -- VCB
Collector Current, IC -- A
3
2
5 7 10
IT11306
Cob -- VCB
2SA2197
f=1MHz
Output Capacitance, Cob -- pF
2SC6102
f=1MHz
2
Output Capacitance, Cob -- pF
100
7
5
100
7
5
3
2
3
2
--0.1
10
0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
7
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
Collector-to-Base Voltage, VCB -- V
5
IT11300
7
f T -- IC
Collector-to-Base Voltage, VCB -- V
IT11307
f T -- IC
Gain-Bandwidth Product, f T -- MHz
3
2
Gain-Bandwidth Product, f T -- MHz
2SA2197
VCE= --10V
5
2SC6102
VCE=10V
3
2
100
7
5
100
7
5
3
2
--0.01
3
2
0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
IT11301
Collector Current, IC -- A
IT11308
No. A0463-3/5
2SA2197 / 2SC6102
7
5
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
5
3
2
VCE(sat) -- IC
2SC6102
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA2197
IC / IB=20
3
2
--0.1
7
5
3
2
7
Ta=
°
C
--25
5
°
C
0.1
7
5
3
2
=7
Ta
5
°
C
2
C
5
°
--
C
25
°
°
C
25
--0.01
7
--0.1
0.01
7
0.1
2
3
5
7
--1.0
2
3
5
Collector Current, IC -- A
--1.0
7
--10
IT11302
7
2
3
5
7
1.0
2
3
5
VCE(sat) -- IC
Collector Current, IC -- A
1.0
7
10
IT11309
7
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
2SA2197
IC / IB=50
5
3
2
2SC6102
IC / IB=50
C
25
°
--0.1
7
5
3
2
Ta
°
C
=75
°
C
--25
0.1
7
5
3
2
25
°
C
7
Ta=
5
°
C
°
C
--25
--0.01
--0.1
2
3
5
7
--1.0
2
3
5
Collector Current, IC -- A
3
--10
IT11303
7
0.01
0.1
2
3
5
7
1.0
2
3
5
VBE(sat) -- IC
Collector Current, IC -- A
3
10
IT11310
7
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
2SA2197
IC / IB=50
2
2SC6102
IC / IB=50
25
°C
--1.0
7
25
°C
1.0
7
Ta= --25°C
Ta= --25°C
75
°
C
5
75
°
C
5
3
2
--0.1
3
2
0.1
2
3
5
7
--1.0
2
3
5
Collector Current, IC -- A
2
10
7
5
--10
IT11304
7
2
3
5
7
1.0
2
3
5
ASO
Collector Current, IC -- A
1.2
10
IT11311
7
PC -- Ta
ICP=9A
IC=7A
100ms
DC
2SA2197 / 2SC6102
3
2
1.0
7
5
3
2
0.1
7
5
3
2
op
e
rat
io
Collector Dissipation, PC -- W
Collector Current, IC -- A
1m
s
10
ms
n(
10
0
µ
s
50
s
0
µ
1.0
0.8
DC
Tc
=
op
25
era
°
C
)
No
0.6
tio
n(
he
at
sin
Ta
=
k
25
°
0.4
0.01
0.1
2SA2197 / 2SC6102
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
2
3
5
7 1.0
2
3
5
C)
0.2
0
7 10
2
3
5
0
20
40
60
80
100
120
140
160
IT11480
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°C
IT11476
No. A0463-4/5
2SA2197 / 2SC6102
11
10
PC -- Tc
2SA2197 / 2SC6102
Collector Dissipation, PC -- W
9
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT11481
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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In the event that any or all SANYO Semiconductor products (including technical data,services) described
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of September, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0463-5/5
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