MITSUBISHI HVIGBT MODULES
CM400DY-50H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM400DY-50H
q
I
C ...................................................................
400A
q
V
CES .......................................................
2500V
q
Insulated Type
q
2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57
±0.25
57
±0.25
4 - M8 NUTS
20
C2
E1
C2
C2
G2
E2
C1
G1
E1
E1
124
±0.25
140
40
E2
CM
C1
E2
E1
CIRCUIT DIAGRAM
E2(C1)
G1
G2
C2
6 -
φ
7 MOUNTING HOLES
24.5
53.6
61.5
15
5.7
15
39.5
7.2
5 - M4 NUTS
36.3
48.8
18
38
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
28
5
30
LABEL
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
(Tj = 25
°
C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE
= 0V
V
CE
= 0V
DC, T
C
= 80°C
Pulse
Pulse
T
C
= 25°C, IGBT part
Conditions
Ratings
2500
±20
400
800
400
800
3400
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
(Note 1)
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 2)
t
rr (Note 2)
Q
rr (Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Note 1.
2.
3.
4.
Parameter
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 40mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 400A, V
GE
= 15V
T
j
= 125°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 1250V, I
C
= 400A, V
GE
= 15V
V
CC
= 1250V, I
C
= 400A
V
GE1
= V
GE2
= 15V
R
G
= 7.5Ω
Resistive load switching operation
I
E
= 400A, V
GE
= 0V
I
E
= 400A
die / dt = –800A /
µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
6.0
—
3.20
3.60
40
4.4
1.3
1.8
—
—
—
—
2.90
—
85
—
—
0.016
Max
5
7.5
0.5
4.16
—
—
—
—
—
1.00
2.00
2.00
1.00
3.77
1.20
—
0.036
0.072
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
(Note 4)
Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
T
j
=25°C
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
800
V
CE
=10V
COLLECTOR CURRENT I
C
(A)
V
GE
=13V
600 V
GE
=14V
V
GE
=15V
400
V
GE
=12V
V
GE
=11V
600
V
GE
=10V
V
GE
=20V
V
GE
=9V
V
GE
=8V
V
GE
=7V
8
10
400
200
200
T
j
= 25°C
T
j
= 125°C
0
0
4
8
12
16
20
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
5
V
GE
=15V
4
10
T
j
= 25°C
8
I
C
= 800A
I
C
= 400A
4
3
6
2
1
T
j
= 25°C
T
j
= 125°C
0
0
200
400
600
800
2
I
C
= 160A
0
0
4
8
12
16
20
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10
2
7
5
3
2
10
1
7
5
3
2
C
ies
4
3
C
oes
2
1
T
j
= 25°C
T
j
= 125°C
0
200
400
600
800
0
10
0
C
res
7
5
3 V
GE
= 0V, T
j
= 25°C
2 C
ies,
C
oes
: f = 100kHz
: f = 1MHz
C
res
10
–1
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
EMITTER CURRENT I
E
(A)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY TIME t
rr
(
µs
)
10
1
7
5
3
2
10
0
7
5
I
rr
10
3
7
5
3
2
10
2
7
5
3
2
2 3
5
10
1
10
0
7
5
3
2
10
–1
7
5
t
d(off)
t
d(on)
t
r
t
f
t
rr
5 7 10
2
2 3
5 7 10
3
2 3
5
10
–1
3
V
CC
= 1250V, T
j
= 125°C
2
Inductive load
V
GE
=
±15V,
R
G
= 7.5Ω
5 7 10
2
2 3
5 7 10
3
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
SWITCHING ENERGY (J/P)
SWITCHING ENERGY (J/P)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
1.0
V
CC
= 1250V, V
GE
=
±15V,
R
G
= 7.5Ω, Tj = 125°C,
Inductive load
0.8
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3.0
2.5
2.0
1.5
1.0
0.5
0
0.6
E
on
0.4
E
off
0.2
E
rec
0
0
100
200
300
400
500
0
5
10
15
20
25
30
CURRENT (A)
GATE RESISTANCE (
Ω
)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
GATE-EMITTER VOLTAGE V
GE
(V)
16
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
V
CC
= 1250V
I
C
= 400A
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
Single Pulse
T
C
= 25°C
R
th(j – c)Q
= 0.036K/ W
R
th(j – c)R
= 0.072K/ W
(Per 1/2 module)
12
8
4
0
0
1000
2000
3000
4000
10
–2
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
GATE CHARGE Q
G
(nC)
Mar. 2003
REVERSE RECOVERY CURRENT I
rr
(A)
SWITCHING TIMES (
µs
)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
V
CC
= 1250V, V
GE
=
±15V
3 R
G
= 7.5Ω, T
j
= 125°C
2 Inductive load
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
模拟电子
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