Ordering number : ENA0365
6HN04MH
N-Channel Silicon MOSFET
6HN04MH
Features
•
General-Purpose Switching Device
Applications
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
2
!0.8mm)
Conditions
Ratings
60
±20
200
800
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=100mA
ID=100mA, VGS=10V
ID=50mA, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
60
1
±10
1.2
140
240
1.8
2.6
27
8.6
4.4
13.5
11.5
81
39
2.4
3.7
2.6
typ
max
Unit
V
µA
µA
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
Marking : FB
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306PE MS IM TB-00002385 No. A0365-1/4
6HN04MH
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=200mA
VDS=30V, VGS=10V, ID=200mA
VDS=30V, VGS=10V, ID=200mA
IS=200mA, VGS=0V
Ratings
min
typ
1.88
0.4
0.37
0.85
1.2
max
Unit
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7019A-003
Switching Time Test Circuit
VIN
2.0
0.25
0.15
10V
0V
VIN
0 to 0.02
PW=10µs
D.C.≤1%
VDD=30V
3
2.1
1.6
D
Rg
ID=200mA
RL=150Ω
VOUT
1
0.25
0.65
2
0.3
P.G
G
6HN04MH
50Ω
0.85
S
0.07
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Rg=1.2kΩ
200
180
160
ID -- VDS
8V
300
ID -- VGS
VDS=10V
5V
4V
15V
10V
250
Drain Current, ID -- mA
140
120
100
80
60
40
20
0
0
0.1
Drain Current, ID -- mA
6V
200
VGS=3V
150
75
°
C
0
0.5
1.0
1.5
25
°
100
C
50
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.0
2.5
3.0
3.5
4.0
Drain-to-Source Voltage, VDS -- V
5.5
5.0
IT11263
5.5
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
Ta
=
--25
°
C
IT11264
RDS(on) -- Ta
Ta=25°C
5.0
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
4.5
4.0
3.5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100mA
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
12
14
16
18
20
ID=50mA
=4V
V GS
,
mA
=50
10V
ID
S=
, VG
mA
100
I
D=
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT11265
Ambient Temperature, Ta --
°C
IT11266
No. A0365-2/4
6HN04MH
7
y
fs -- ID
VDS=10V
Forward Transfer Admittance,
y
fs -- mS
5
3
2
1000
7
5
3
IS -- VSD
VGS=0V
Source Current, IS -- A
2
100
7
5
5
°
C
2
10
7
5
3
2
5
3
2
0.01
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT11267
1.0
0.4
0.5
0.6
Ta=
7
7
°
C
75
Ta
=
3
0.7
--25
°
C
0.8
0.9
25
°
C
0.1
°
C
25
--2
5
°
C
1.0
1.1
IT11268
Drain Current, ID -- mA
3
2
SW Time -- ID
VDD=30V
VGS=10V
Ciss, Coss, Crss -- pF
td(off)
7
5
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
100
7
5
3
2
3
2
Ciss
tf
10
7
Coss
Crss
td(on)
10
7
5
0.01
2
3
5
7
0.1
2
3
5
1.0
IT11269
7
5
tr
3
2
0
5
10
15
20
IT11270
Drain Current, ID -- A
10
9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
2
1.0
7
5
ASO
Gate-to-Source Voltage, VGS -- V
VDS=30V
ID=200mA
Drain Current, ID -- A
IDP=800mA
ID=200mA
8
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
3
2
0.1
7
5
3
2
0.01
7
5
3
2
≤10µs
10
0
1m
µ
s
10
m
s
s
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
!0.8mm)
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
D
C
op
er
10
0m
at
io
n
s
25
a=
(T
°
C
)
0.001
0.01
Total Gate Charge, Qg -- nC
0.7
IT11271
PD -- Ta
Drain-to-Source Voltage, VDS -- V
5 7 100
IT11272
Allowable Power Dissipation, PD -- W
0.6
M
0.5
ou
nt
ed
on
0.4
ac
er
am
ic
0.3
bo
ar
d
(9
00
m
0.2
m
2
!
0.
8m
0.1
0
0
20
40
60
80
100
120
m
)
160
140
Ambient Temperature, Ta --
°C
IT11273
No. A0365-3/4
6HN04MH
Note on usage : Since the 6HN04MH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0365-4/4
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