Ordering number : ENA0412
2SC6097
2SC6097
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
•
•
•
•
•
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
100
100
60
6.5
3
5
600
0.8
15
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=50V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
300
Ratings
min
typ
max
1
1
600
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 / 53006EA MS IM TB-00002348 No. A0412-1/4
2SC6097
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
100
100
60
6.5
35
680
24
Ratings
min
typ
390
18
100
90
0.84
150
135
1.2
max
Unit
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7518-003
6.5
5.0
2.3
1.5
Package Dimensions
unit : mm
7003-003
6.5
5.0
2.3
1.5
0.5
0.5
4
4
7.0
5.5
5.5
7.0
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
0.85
0.5
1.2
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR10
IB1
OUTPUT
IB2
RB
RL
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=30V
10IB1= --10IB2=IC=0.5A
No. A0412-2/4
2SC6097
5.0
4.5
IC -- VCE
100mA
80mA
60mA
40mA
20mA
10mA
3.0
IC -- VBE
VCE=2V
Collector Current, IC -- A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Collector Current, IC -- A
4.0
2.5
2.0
1.5
C
25
°
C
1.0
5mA
2mA
0.5
IB=0mA
0.8
0.9
1.0
0
0
0.2
0.4
0.6
Ta=7
5
°
0.8
--25
°
C
1.0
1.2
IT11047
Collector-to-Emitter Voltage, VCE -- V
1000
7
5
IT11046
7
hFE -- IC
Ta=75
°
C
25
°
C
Base-to-Emitter Voltage, VBE -- V
f T -- IC
VCE=2V
Gain-Bandwidth Product, f T -- MHz
VCE=10V
5
3
2
DC Current Gain, hFE
3
--25
°
C
2
100
7
5
100
7
5
0.01
3
2
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
7
5
IT11048
5
Cob -- VCB
Collector Current, IC -- A
IT11049
VCE(sat) -- IC
f=1MHz
3
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
2
0.1
7
5
3
2
0.01
7
5
3
3
2
Ta
5
=7
°
C
C
5
°
--2
10
7
5
0.1
25
°
C
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
5
3
5 7 100
IT11050
2
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
VCE(sat) -- IC
Collector Current, IC -- A
3
IT11051
VBE(sat) -- IC
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
2
IC / IB=10
0.1
7
5
3
2
1.0
=
Ta
°
C
75
Ta= --25
°
C
75
°
C
--2
5
°
C
7
°
C
25
0.01
7
5
0.01
25
°
C
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
IT11052
Collector Current, IC -- A
IT11053
No. A0412-3/4
2SC6097
10
7
5
ASO
ICP=5A
<10µs
Collector Current, IC -- A
10
1.0
7
5
3
2
0.1
7
5
3
2
DC
10
0
ms
Collector Current, IC -- A
3
2
1m
IC=3A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
ICP=5A
IC=3A
DC operation
100ms
10ms 1ms
<10µs
µ
s
100
µ
s
10 0
s
50
0
µ
s
50
0
µ
s
ms
op
era
tio
n
0.01
0.1
Ta=25°C
Single Pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
0.9
0.8
5 7 100
IT11054
0.01
0.1
Tc=25°C
Single Pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
17.5
5 7 100
IT11055
PC -- Tc
15.0
Collector Dissipation, PC -- W
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
Collector Dissipation, PC -- W
12.5
10.0
7.5
5.0
2.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT11056
Case Temperature, Tc --
°C
IT11057
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of May, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0412-4/4
嵌入式系统
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