Ordering number : ENA0434
2SC6096
SANYO Semiconductors
DATA SHEET
2SC6096
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
•
•
•
•
•
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on a ceramic board (250mm
2
!0.8mm)
Tc=25°C
Conditions
Ratings
120
120
100
6.5
2
3
400
1.3
3.5
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=80V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
300
Ratings
min
typ
max
1
1
600
Unit
µA
µA
Marking : QG
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006EA MS IM TB-00002425 No. A0434-1/4
2SC6096
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
120
120
100
6.5
40
1100
40
Ratings
min
typ
300
13
100
0.85
150
1.2
max
Unit
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7007A-004
Top View
4.5
1.6
1.5
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR10
IB1
OUTPUT
IB2
RB
RL
50Ω
1.0
+
100µF
VBE= --5V
0.4
+
470µF
VCC=50V
2.5
1
0.4
0.5
1.5
2
3
4.0
10IB1= --10IB2=IC=0.5A
3.0
0.75
1 : Base
2 : Collector
3 : Emitter
Bottom View
SANYO : PCP
2.0
1.8
IC -- VCE
mA
2.0
IC -- VBE
VCE=5V
80mA
60mA
Collector Current, IC -- A
1.8
1.6
1.4
1.2
1.0
0.8
Collector Current, IC -- A
1.6
1.4
1.2
1.0
100
40mA
20mA
10mA
0.8
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
25
°
C
2mA
0.4
0.2
IB=0mA
0.9
1.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT11116
Collector-to-Emitter Voltage, VCE -- V
IT11115
Base-to-Emitter Voltage, VBE -- V
--25
°
C
0.6
Ta=75
°
C
5mA
No. A0434-2/4
2SC6096
1000
7
5
hFE -- IC
VCE=5V
Gain-Bandwidth Product, f T -- MHz
Ta=75°C
25
°C
--25
°C
7
5
f T -- IC
VCE=10V
3
2
DC Current Gain, hFE
3
2
100
7
5
100
7
5
3
2
0.01
2
3
5
7
2
3
5
7
2
3
3
2
0.01
0.1
1.0
2
3
5
7
0.1
2
3
5
7
Collector Current, IC -- A
100
7
IT11117
3
Cob -- VCB
Collector Current, IC -- A
2
1.0
IT11118
VCE(sat) -- IC
f=1MHz
5
2
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
0.1
7
5
3
2
3
2
75
Ta=
°
C
5
°
C
--2
10
7
5
3
0.1
0.01
7
5
3
0.01
C
25
°
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
3
5 7 100
IT11119
2
3
5
7 0.1
2
3
5
7 1.0
2
3
VBE(sat) -- IC
Collector Current, IC -- A
5
IT11120
ASO
10
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
3
2
ICP=3A
s
m
0
µ
8m
50
s
0.
2
!
1m
s
C)
m
5
°
m
0m
=2
50
10
(2
Tc
)
rd
n(
io
°
C
oa
at
25
c b
er
a=
i
op
(T
am
C
n
er
D
io
a c
at
er
on
op
ted
C
D
oun
M
<10µs
100
Collector Current, IC -- A
IC=2A
m
s
µ
s
1.0
7
5
3
2
0.1
7
5
3
2
1.0
Ta= --25°C
75
°
C
7
5
25
°C
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
0.01
0.1
Tc=25°C
Single Pulse
2
3
)
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- A
1.4
1.3
1.2
IT11121
4.0
3.5
Collector-to-Emitter Voltage, VCE -- V
5 7 100
2
IT11122
PC -- Ta
PC -- Tc
Collector Dissipation, PC -- W
ou
1.0
nt
Collector Dissipation, PC -- W
)
160
M
ed
3.0
2.5
2.0
1.5
1.0
0.5
0
on
ac
0.8
er
am
ic
b
0.6
oa
rd
(2
50
0.4
m
m
2
!
0.
8m
0.2
0
0
20
40
60
80
100
120
m
140
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT11123
Case Temperature, Tc --
°C
IT11124
No. A0434-3/4
2SC6096
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0434-4/4
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