Ordering number : ENA0274
2SC6093LS
SANYO Semiconductors
DATA SHEET
2SC6093LS
Features
•
•
•
•
•
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
1500
800
5
5
12
2.0
25
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Fall Time
Symbol
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)
hFE1
hFE2
VF
tf
Conditions
VCB=800V, IE=0A
VCE=1500V, RBE=0Ω
IC=100mA, IB=0A
VEB=4V, IC=0A
IC=1.35A, IB=0.27A
IC=2.7A, IB=0.54A
IC=2.7A, IB=0.54A
VCE=5V, IC=0.5A
VCE=5V, IC=3A
IEC=4A
IC=1.8A, IB1=0.36A, IB2=--0.72A
800
40
0.1
130
0.3
2
1.5
10
5.3
7.5
2
0.2
V
µs
Ratings
min
typ
max
10
1.0
Unit
µA
mA
V
mA
V
V
V
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11707KC TI IM TC-00000456 No. A0274-1/4
2SC6093LS
Package Dimensions
unit : mm (typ)
7509-003
10.0
3.2
3.5
7.2
Switching Time Test Circuit
4.5
2.8
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
RB
+
100µF
VBE= --5V
+
470µF
VCC=200V
RL=111Ω
16.1
16.0
0.9
1.2
0.75
14.0
3.6
1.2
0.7
1 2 3
2.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
2.55
2.55
0.6
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
IC -- VCE
A
1.5
5.0
4.5
IC -- VBE
VCE=5V
Collector Current, IC -- A
Collector Current, IC -- A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.6A
0.5A
7A
0.4A
1.0A 0.9A 0.8A 0.
0.3A
1.1A
0.2A
1.2A
0.1A
1.3A
0.05A
1.4A
IB=0A
2
3
4
5
6
7
8
9
10
Ta=
120
°
C
25
°
C
0
0.2
0.4
0.6
--40
°
C
0.8
1.0
1.2
1.4
1.6
Collector-to-Emitter Voltage, VCE -- V
5
3
2
IT11312
10
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
IT11313
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
10
7
5
3
2
°
C
-40
-
1.0
7
5
3
2
0.1
7
5
25
°
C
Ta=
--4
0
°
C
120
°
C
2
3
5
7
1.0
2
3
5
7
1.0
0.1
2
3
5
7
1.0
2
3
5
7
10
3
0.1
Collector Current, IC -- A
IT11314
Collector Current, IC -- A
120
25
°
C
°
C
2
Ta= --
4
IT11315
1
Ta=
3
0
°
C
C
20
°
7
5
No. A0274-2/4
25
°
C
VCE=5V
IC / IB=5
2SC6093LS
7
5
SW Time -- IC
tstg
Switching Time, SW Time --
µs
3
2
Switching Time, SW Time --
µs
VCC=200V
IC / IB2=5
IB2 / IB1=2
R load
10
7
5
3
2
SW Time -- IB2
VCC=200V
IC=1.8A
IB1=0.36A
R load
tst
g
1.0
7
5
3
2
1.0
7
5
tf
3
2
tf
2
3
5
7
1.0
2
3
5
7
0.1
0.1
0.1
0.1
2
3
5
7
1.0
2
3
IT11317
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Forward Bias A S O
ICP=12A
Collector Current, IC -- A
IT11316
3
2
10
Reverse Bias A S O
L=500
µ
H
IB2= --1.0A
Tc=25
°
C
Single pulse
Base Current, IB2 -- A
Collector Current, IC -- A
Collector Current, IC -- A
IC=5A
s
0
µ
10
7
5
3
2
1.0
7
5
3
2
0.1
10
s
0
µ
30
s
1m
10
ms
DC
e
op
rat
ion
0.01
1.0
Tc=25
°
C
Single pulse
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT11318
2
3
5
7 100
2
3
5
7 1000
2
3
5
Collector-to-Emitter Voltage, VCE -- V
2.5
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
30
IT11319
PC -- Tc
Collector Dissipation, PC -- W
2.0
Collector Dissipation, PC -- W
25
20
1.5
No
1.0
he
at
15
sin
k
10
0.5
5
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT11320
Case Temperature, Tc --
°C
IT11321
No. A0274-3/4
2SC6093LS
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0274-4/4
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