Ordering number : ENA0235
2SA2209
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor
2SA2209
Applications
•
50V / 15A High-Speed Switching
Applications
High-speed switching applications (switching regulator, driver circuit).
Features
•
•
•
•
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
--50
--50
--6
--15
--20
--3
1
20
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=-
-40V, IE=0A
VEB=-
-4V, IC=0A
VCE=-
-2V, IC=--330mA
VCE=-
-2V, IC=--10A
VCE=-
-10V, IC=--700mA
VCB=-
-10V, f=1MHz
200
50
120
140
MHz
pF
Ratings
min
typ
max
--10
--10
500
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1306EA TI IM TC-00000354 No. A0235-1/4
2SA2209
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=--7.5A, IB=--375mA
IC=--7.5A, IB=--375mA
IC=--100µA, IE=0A
IC=--1mA, RBE=∞
IE=--100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--50
--50
--6
80
300
45
Ratings
min
typ
--250
max
--500
--1.2
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7518-003
6.5
5.0
2.3
1.5
Package Dimensions
unit : mm (typ)
7003-003
0.5
4
4
7.0
1.5
6.5
5.0
2.3
0.5
5.5
5.5
7.0
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
0.85
0.5
1.2
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
RB
+
100µF
VBE=5V
+
470µF
VCC= --25V
RL
IB1
IB2
OUTPUT
IC=20IB1= --20IB2= --7A
--15
--14
--13
--12
--11
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
--0.5
--1.0
--1.5
--1
IC -- VCE
-
--800
--700 -600m
mA
mA
A
--50
0mA
mA
--250
--200mA
mA
0
--30
--150mA
A
0m
--35
A
--100mA
0m
mA
--40
50
A
--8
--7
IC -- VCE
--
--30 --250m
200m
0mA
A
A
--1
80
m
A
0m
--10
A
20m
A
--80m
--60mA
Collector Current, IC -- A
Collector Current, IC -- A
--6
--5
--4
--4
--1
mA
140
--
mA
160
--
--40mA
--50mA
--20mA
--3
--2
--20mA
--10mA
IB=0mA
--2.0
IT09987
0
0
--0.2
--0.4
--0.6
IB=0mA
--0.8
--1.0
IT09988
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No. A0235-2/4
2SA2209
--16
--14
IC -- VBE
VCE= --2V
1000
7
5
hFE -- IC
VCE= --2V
Ta=75
°C
25
°C
--25
°C
Collector Current, IC -- A
DC Current Gain, hFE
--12
--10
--8
--6
--4
--2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
IT09989
3
2
100
7
5
3
2
Ta=
75
°
C
25
°
--25
C
°
C
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Base-to-Emitter Voltage, VBE -- V
1000
7
5
Collector Current, IC -- A
1000
IT09900
hFE -- IC
fT -- IC
VCE= --10V
Ta=25
°C
7
Gain-Bandwidth Product, fT -- MHz
5
5
3
2
DC Current Gain, hFE
3
2
VC
=
E
mV
00
--2
100
7
5
3
2
100
7
5
3
2
--2
V
V
0m
--50
--1V
10
--0.01 2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
2 3
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
1000
7
IT09991
--1.0
7
Cob -- VCB
Collector Current, IC -- A
5 7 --10
IT09992
VCE(sat) -- IC
f=1MHz
IC / IB=20
75
°
C
25
°
C
--25
°
C
2
3
IT09994
2 3
IT09996
Output Capacitance, Cob -- pF
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
--0.1
7
5
3
2
100
7
5
3
2
--0.01
10
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
7
7
5
--0.01
C
Ta=
--25
°
75
°
C
25
°
C
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
Collector-to-Base Voltage, VCB -- V
5
3
IT09993
3
VCE(sat) -- IC
Collector Current, IC -- A
VBE(sat) -- IC
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
--1.0
7
5
3
2
--0.1
7
5
3
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
2
--1.0
=
Ta
°
C
75
Ta=
--25
°
C
7
5
Ta=
--25
°
C
25
°
C
2
--
°
C
25
°
C
25
75
°
C
25
°
C
3
75
°
C
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
2
--0.01
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
--0.01
--0.01
Collector Current, IC -- A
IT09995
Collector Current, IC -- A
No. A0235-3/4
Ta
=
IC / IB=20
2SA2209
5
3
2
Forward Bias A S O
ICP= --20A
Collector Dissipation, PC -- W
1.2
PC -- Ta
Collector Current, IC -- A
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IC= --15A
10
0m
s
1.0
0
=5
PT
s
0
µ
s
1m
0.8
s
m
10
DC
op
0.6
o
ati
er
n
0.4
0.2
--0.01
--0.1
Tc=25
°C
Single pulse
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
7
0
0
20
40
60
80
100
120
140
160
IT11947
Collector-to-Emitter Voltage, VCE -- V
25
Ambient Temperature, Ta --
°C
IT11945
PC -- Tc
Collector Dissipation, PC -- W
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT11946
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0235-4/4
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