Ordering number : EN7692A
2SC4460M-SV
SANYO Semiconductors
DATA SHEET
2SC4460M-SV
Features
•
•
•
•
•
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown voltage, High reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, duty cycle≤10%
Conditions
Ratings
1000
500
7
15
25
4
3
Tc=25°C
55
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=500V, IE=0A
VEB=5V, IC=0A
Ratings
min
typ
max
10
10
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907 TI IM TC-00000845 / 61504KB TS IM TA-100751 No.7692-1/4
2SC4460M-SV
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collectoe-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
Conditions
VCE=5V, IC=1.2A
VCE=5V, IC=6A
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
IC=6A, IB=1.2A
IC=6A, IB=1.2A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=5A, IB1=--IB2=2A, L=500µH, clamped
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6Ω
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6Ω
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6Ω
1000
500
7
500
0.5
3.0
0.3
Ratings
min
20
8
18
160
1
1.5
MHz
pF
V
V
V
V
V
V
µs
µs
µs
typ
max
40
Unit
Package Dimensions
unit : mm (typ)
7505-002
3.4
5.0
8.0
Switching Time Test Circuit
16.0
5.6
3.1
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
RB
RL
28.6Ω
+
470µF
VCC=200V
21.0
22.0
2.0
+
100µF
VBE= --5V
4.0
2.8
2.0
20.4
2.0
0.6
1.0
1
2
3
3.5
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
5.45
5.45
12
IC -- VCE
1.4A
1.2A
1.0A
800mA
600mA
500mA
16
14
IC -- VBE
VCE=5V
10
Collector Current, IC -- A
Collector Current, IC -- A
12
10
8
0
°
C
0
0.2
0.4
0.6
400mA
4
300mA
200mA
100mA
50mA
20mA
6
4
2
0
2
IB=0mA
8
10
ITR07047
0
0
2
4
6
Ta
=
0.8
12
6
8
25
°
C
--40
°
C
1.0
1.2
ITR07048
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
No.7692-2/4
2SC4460M-SV
2
hFE -- IC
VCE=5V
10
5
3
2
1.0
5
3
2
0.1
5
3
VCE(sat) -- IC
IC / IB=5
100
DC Current Gain, hFE
7
5
3
2
25
°
C
--40
°
C
10
7
5
3
2
5
0.1
2
5
1.0
2
5
=1
Ta
20
°
C
°
C
--40
Collector Current, IC -- A
10
7
2
10
ITR07049
10
2
5
0.1
2
5
1.0
2
5
VBE(sat) -- IC
IC / IB=5
Collector Current, IC -- A
2
10
ITR07050
SW Time -- IC
tstg
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
Switching Time, SW Time --
µs
5
3
2
1.0
7
5
3
2
0.1
7
5
0.1
1.0
Ta= --40°C
7
5
3
2
2
5
0.1
2
5
1.0
2
5
2
10
ITR07051
25
°
C
120
°
C
t on
tf
2
3
5
7
1.0
2
3
5
7
2
10
ITR07052
100
5
2
Forward Bias A S O
ICP=25A
IC=15A
<50µs
Collector Current, IC -- A
100
7
5
Reverse Bias A S O
IB2= --2A
L=100µH
Tc=25
°
C
Collector Current, IC -- A
Collector Current, IC -- A
10
5
2
1.0
5
2
0.1
5
2
P
DC
C =55
W
op
era
tio
n
Collector Current, IC -- A
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
Test Circuit
IB1
IB2
IC
TUT
L
VR
Tc=25
°
C
Single pulse
2
3
5
7 10
2
3
5
7 100
2
3
--5V
10
2
3
5
VCC=20V
7 100
2
3
5
7 1000
2
IT06497
Collector-to-Emitter Voltage, VCE -- V
4
5 7 1000
ITR07053
Collector-to-Emitter Voltage, VCE -- V
60
55
PC -- Ta
PC -- Tc
Collector Dissipation, PC -- W
3
Collector Dissipation, PC -- W
50
40
2
No
he
at
sin
k
30
20
1
10
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140 150 160
ITR07056
Ambient Temperature, Ta --
°C
IT12925
Case Temperature, Tc --
°C
No.7692-3/4
25
°
C
Ta=120
°
C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
10
s
0
µ
1m
s
10
ms
2SC4460M-SV
Transient Thermal Resistance, Rth(t) --
°C
/ W
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.1
Rth(t) -- t
Tc=25
°
C
2 3
5
1.0
2 3
5
10
2 3
5
100
2 3
Time, t -- ms
5 1000
ITR07055
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No.7692-4/4
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