74CBTLV1G125
Single bus switch
Rev. 01 — 2 February 2007
Product data sheet
1. General description
The 74CBTLV1G125 is a high-performance, low-power, low-voltage, Si-gate CMOS
device, superior to most advanced CMOS compatible TTL families.
Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 2.3 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74CBTLV1G125 provides a single high-speed line switch. The switch is disabled
when the output enable (OE) input is high.
To ensure the high-impedance OFF-state during power up or power down, OE should be
tied to the V
CC
through a pullup resistor. The minimum value of the resistor is determined
by the current-sinking capability of the driver.
2. Features
s
Supply voltage range from 2.3 V to 3.6 V
s
High noise immunity
s
Complies with JEDEC standard:
x
JESD8-5 (2.3 V to 2.7 V)
x
JESD8-B/JESD36 (2.7 V to 3.6 V).
s
ESD protection:
x
HBM JESD22-A114-D exceeds 2000 V
x
MM JESD22-A115-A exceeds 200 V
x
CDM JESD22-C101-C exceeds 1000 V
s
5
Ω
switch connection between two ports
s
Rail to rail switching on data I/O ports
s
CMOS low power consumption
s
Latch-up performance meets requirements of JESD78 Class I
s
I
OFF
circuitry provides partial power down mode operation
s
Multiple package options
s
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
NXP Semiconductors
74CBTLV1G125
Single bus switch
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74CBTLV1G125GW
74CBTLV1G125GV
74CBTLV1G125GM
74CBTLV1G125GF
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
TSSOP5
SC-74A
XSON6
XSON6
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
4. Marking
Table 2.
Marking
Marking code
bM
b25
bM
bM
Type number
74CBTLV1G125GW
74CBTLV1G125GV
74CBTLV1G125GM
74CBTLV1G125GF
5. Functional diagram
A
2
SWITCH
4
A
B
OE
B
OE
1
001aad713
001aad714
Fig 1. Logic symbol
Fig 2. Logic diagram
74CBTLV1G125
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2007
2 of 18
NXP Semiconductors
74CBTLV1G125
Single bus switch
6. Pinning information
6.1 Pinning
74CBTLV1G125
74CBTLV1G125
OE
A
1
2
GND
GND
3
001aad715
OE
V
CC
1
6
V
CC
OE
A
74CBTLV1G125
1
2
3
6
5
4
V
CC
n.c.
B
5
A
2
5
n.c.
3
4
B
GND
4
B
001aad717
001aaf817
Transparent top view
Transparent top view
Fig 3. Pin configuration SOT353-1
and SOT753
Fig 4. Pin configuration SOT886
Fig 5. Pin configuration SOT891
6.2 Pin description
Table 3.
Symbol
OE
A
GND
B
n.c.
V
CC
Pin description
Pin
SOT353-1/SOT753
1
2
3
4
-
5
SOT886/SOT891
1
2
3
4
5
6
output enable input OE (active LOW)
data input or output A
ground (0 V)
data input or output B
not connected
supply voltage
Description
7. Functional description
7.1 Function table
Table 4.
L
H
[1]
H = HIGH voltage level;
L = LOW voltage level;
Function table
[1]
Function switch
ON-state
OFF-state
Output enable input OE
74CBTLV1G125
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2007
3 of 18
NXP Semiconductors
74CBTLV1G125
Single bus switch
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
SW
I
IK
I
SK
I
SW
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input voltage
switch voltage
input clamping current
switch clamping current
switch current
supply current
ground current
storage temperature
total power dissipation
Conditions
[1]
Min
−0.5
−0.5
−0.5
-
-
-
-
−50
−65
Max
+4.6
+4.6
V
CC
+ 0.5
−50
±50
±128
+50
-
+150
250
Unit
V
V
V
mA
mA
mA
mA
mA
°C
mW
enable and disable mode
V
I/O
<
−0.5
V
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
SW
= 0 V to V
CC
T
amb
=
−40 °C
to +125
°C
[2]
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 and SC-74A packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
°C
the value of P
tot
derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
SW
T
amb
∆t/∆V
[1]
Recommended operating conditions
Parameter
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
V
CC
= 2.3 V to 3.6 V
[1]
Conditions
Min
2.3
0
Max
3.6
3.6
V
CC
+125
20
Unit
V
V
V
°C
ns/V
enable and disable mode
0
−40
0
Applies to control signal levels.
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
−40 °C
to +85
°C
V
IH
V
IL
I
I
I
S(OFF)
I
S(ON)
74CBTLV1G125
Conditions
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
I
= GND to V
CC
; V
CC
= 3.6 V
V
I
= V
IH
or V
IL
; V
O
= V
CC
−
GND;
V
CC
= 3.6 V; see
Figure 6
V
I
= V
IH
or V
IL
; V
CC
= 3.6 V; see
Figure 7
Rev. 01 — 2 February 2007
Min
1.7
2.0
-
-
-
-
-
Typ
[1]
-
-
-
-
-
±0.1
±0.1
Max
-
-
0.7
0.8
±1.0
±5
±5
Unit
V
V
V
V
µA
µA
µA
4 of 18
HIGH-level input voltage
LOW-level input voltage
input leakage current
OFF-state leakage current
ON-state leakage current
© NXP B.V. 2007. All rights reserved.
Product data sheet
NXP Semiconductors
74CBTLV1G125
Single bus switch
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
I
OFF
I
CC
∆I
CC
C
I
C
sw
power-off leakage current
supply current
additional supply current
input capacitance
switch capacitance
Conditions
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 3.6 V
control input; V
I
= V
CC
−
0.6 V; V
CC
= 3.6 V
control input; V
I
= 0 V or 3 V
OFF-state
ON-state
T
amb
=
−40 °C
to +125
°C
V
IH
V
IL
I
I
I
S(OFF)
I
S(ON)
I
OFF
I
CC
∆I
CC
[1]
[2]
[2]
Min
-
-
-
-
-
-
1.7
2.0
-
-
-
-
-
-
-
[2]
Typ
[1]
-
-
-
2.5
7.0
10.3
-
-
-
-
-
-
-
-
-
-
Max
±10
10
300
-
-
-
-
-
0.7
0.8
±100
±200
±200
±10
200
5000
Unit
µA
µA
µA
pF
pF
pF
V
V
V
V
µA
µA
µA
µA
µA
µA
HIGH-level input voltage
LOW-level input voltage
input leakage current
OFF-state leakage current
ON-state leakage current
power-off leakage current
supply current
additional supply current
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
I
= GND to V
CC
; V
CC
= 3.6 V
V
I
= V
IH
or V
IL
; V
O
= V
CC
−
GND;
V
CC
= 3.6 V; see
Figure 6
V
I
= V
IH
or V
IL
; V
CC
= 3.6 V; see
Figure 7
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 3.6 V
control input; V
I
= V
CC
−
0.6 V; V
CC
= 3.6 V
-
Typical values are measured at T
amb
= 25
°C
and at V
CC
= 3.3 V.
One input at 3 V, other inputs at V
CC
or GND.
Table 8.
Resistance R
ON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); see test circuit
Figure 8.
Symbol Parameter
R
ON
Conditions
[2]
−40 °C
to +85
°C
Min
Typ
[1]
4.7
4.5
11
4.2
4.1
7.3
Max
10
10
25
7
7
15
−40 °C
to +125
°C
Min
-
-
-
-
-
-
Max
15.0
15.0
38.0
11.0
11.0
25.5
Unit
ON resistance V
CC
= 2.3 V; see
Figure 9
I
SW
= 64 mA; V
I
= 0 V
I
SW
= 24 mA; V
I
= 0 V
I
SW
= 15 mA; V
I
= 1.7 V
V
CC
= 3.0 V; see
Figure 10
I
SW
= 64 mA; V
I
= 0 V
I
SW
= 24 mA; V
I
= 0 V
I
SW
= 15 mA; V
I
= 2.4 V
-
-
-
-
-
-
Ω
Ω
Ω
Ω
Ω
Ω
[1]
[2]
Typical values are measured at T
amb
= 25
°C.
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is
determined by the lower of the voltages of the two (A or B) terminals
74CBTLV1G125
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2007
5 of 18
Microchip MCU
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