White Electronic Designs
FEATURES
Access Times of 35ns (SRAM) and 70ns (FLASH)
Access Times of 70ns (SRAM) and 120ns (FLASH)
Packaging
• 66-pin, PGA Type, 1.075 inch square HIP,
Hermetic Ceramic HIP (Package 400)
• 66-pin, PGA Type, 1.185 inch square HIP,
Hermetic Ceramic HIP (Package 401)
• 68 lead, Hermetic CQFP (G1U)
1
, 22.4mm (0.880
inch) square (Package 519). Designed to
fi
t
JEDEC 68 lead 0.990” CQFJ footprint (FIGURE 2)
• 68 lead, Hermetic CQFP (G1T), 22.4mm (0.880
inch) square (Package 524)
128Kx16 SRAM
128Kx16 5V FLASH
Organized as 128Kx16 of SRAM and 128Kx16 of
Flash Memory with separate Data Buses
Both blocks of memory are User Configurable as
256Kx8
Low Power CMOS
Commercial, Industrial and Military Temperature
Ranges
WSF128K16-XXX
128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight
• WSF128K16-XHX — 13 grams typical
• WSF128K16-H1X — 13 grams typical
• WSF128K16-XG1UX
1
— 5 grams typical
• WSF128K16-XG1TX — 5 grams typical
FLASH MEMORY FEATURES
10,000 Erase/Program Cycles
Sector Architecture
• 8 equal size sectors of 16K bytes each
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
5 Volt Programming; 5V ± 10% Supply
Embedded Erase and Program Algorithms
Hardware Write Protection
Page Program Operation and Internal Program
Control Time.
Note: For programming information refer to Flash Programming 1M5 Application Note.
Note 1: Package not recommended for new designs
FIGURE1 PIN CONFIGURATION FOR WSF128K16-XHX AND WSF128K16-XH1X
Top View
1
SD
8
SD
9
SD
10
A
13
A
14
A
15
A
16
NC
SD
0
SD
1
SD
2
11
22
12
SWE
2
#
SCS
2
#
GND
SD
11
A
10
A
11
A
12
V
CC
SCS
1
#
NC
SD
3
33
23
SD
15
SD
14
SD
13
SD
12
OE#
NC
SWE
1
#
SD
7
SD
6
SD
5
SD
4
FD
8
FD
9
FD
10
A
6
A
7
NC
A
8
A
9
FD
0
FD
1
FD
2
44
34
V
CC
FCS
2
#
FWE
2
#
FD
11
A
3
A
4
A
5
FWE
1
#
FCS
1
#
GND
FD
3
55
45
FD
15
FD
14
FD
13
FD
12
A
0
A
1
A
2
FD
7
FD
6
FD
5
FD
4
66
OE#
A
0-16
128K x 8
SRAM
128K x 8
SRAM
128K x 8
FLASH
128K x 8
FLASH
Pin Description
56
FD0-15
SD0-15
A0-16
SWE1-2#
SCS1-2#
OE#
V
CC
GND
NC
FWE1-2#
FCS1-2#
Flash Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Flash Write Enable
Flash Chip Select
Block Diagram
S W E
1
# S CS
1
#
S W E
2
# S CS
2
#
F W E
1
# F CS
1
#
F W E
2
# F CS
2
#
8
8
8
8
SD
0-7
SD
8-15
FD
0-7
FD
8-15
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
May 2003
Rev. 6
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WSF128K16-XXX
FIGURE 2 – PIN CONFIGURATION FOR WSF128K16-XG1UX
1
, WSF128K16-XG1TX
Top View
NC
A
0
A
1
A
2
A
3
A
4
A
5
FCS
1
#
GND
FCS
2
#
SWE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
Pin Description
FD0-15
SD0-15
A0-16
FD
0
FD
1
FD
2
FD
3
FD
4
FD
5
FD
6
FD
7
GND
FD
8
FD
9
FD
10
FD
11
FD
12
FD
13
FD
14
FD
15
Flash Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Flash Write Enable
Flash Chip Select
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
SD
0
SD
1
SD
2
SD
3
SD
4
SD
5
SD
6
SD
7
GND
SD
8
SD
9
SD
10
SD
11
SD
12
SD
13
SD
14
SD
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
SWE1-2#
SCS1-2#
OE#
V
CC
GND
NC
FWE1-2#
FCS1-2#
Block Diagram
S W E
1
# S CS
1
#
OE#
A
0-16
128K x 8
SRAM
128K x 8
SRAM
128K x 8
FLASH
128K x 8
FLASH
S W E
2
# S CS
2
#
F W E
1
# F CS
1
#
F W E
2
# F CS
2
#
SCS
1
#
OE#
SCS
2
#
NC
SWE
2
#
FWE
1
#
FWE
2
#
A
11
A
12
A
13
A
14
NC
NC
V
CC
NC
NC
NC
8
8
8
8
SD
0-7
SD
8-15
FD
0-7
FD
8-15
NOTE 1: Package not recommended for new designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
May 2003
Rev. 6
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Operating Temperature
T
A
Storage Temperature
T
STG
Signal Voltage Relative to GND
V
G
Junction Temperature
T
J
Supply Voltage
V
CC
Parameter
Flash Data Retention
Flash Endurance (write/erase cycles)
Min
-55
-65
-0.5
-0.5
Max
+125
+150
7.0
150
7.0
Unit
°C
°C
V
°C
V
SCS#
H
L
L
L
OE#
X
L
H
X
SWE#
X
H
H
L
WSF128K16-XXX
SRAM TRUTH TABLE
Mode
Standby
Read
Read
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
CAPACITANCE
10 years
10,000
T
A
= +25°C
Test
Symbol
Condition
Max Unit
OE# Capacitance
C
OE
V
IN
= 0V, f = 1.0MHz 50 pF
F/S WE1-2# Capacitance
C
WE
V
IN
= 0V, f = 1.0MHz 20 pF
F/S CS1-2# Capacitance
C
CS
V
IN
= 0V, f = 1.0MHz 20 pF
SD0-15/FD0-15 Capacitance
C
I/O
V
IN
= 0V, f = 1.0MHz 20 pF
A0 - A16 Capacitance
C
AD
V
IN
= 0V, f = 1.0MHz 50 pF
This parameter is guaranteed by design but not tested.
NOTES: 1. Stresses above the absolute maximum rating may cause permanent
damage to the device. Extended operation at the maximum levels may
degrade performance and affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
4.5
2.2
-0.5
Max
5.5
V
CC
+ 0.3
+0.8
Unit
V
V
V
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
SRAM Operating Supply Current x 16 Mode
Standby Current
SRAM Output Low Voltage
SRAM Output High Voltage
Flash V
CC
Active Current for Read (1)
Flash V
CC
Active Current for Program or Erase (2)
Flash Output Low Voltage
Flash Output High Voltage
Flash Output High Voltage
Flash Low V
CC
Lock Out Voltage
Symbol
I
LI
I
LO
I
CCx16
I
SB
V
OL
V
OH
I
CC1
I
CC2
V
OL
V
OH1
V
OH2
V
LKO
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
SCS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
SCS# = V
IL
, OE# = FCS# = V
IH
, f = 5MHz, V
CC
= 5.5
FCS# = SCS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 2.1mA, V
CC
= 4.5
I
OH
= -1.0mA, V
CC
= 4.5
FCS# = V
IL
, OE# = SCS# = V
IH
FCS# = V
IL
, OE# = SCS# = V
IH
I
OL
= 8.0mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
I
OH
= -100
μA,
V
CC
= 4.5
Min
Max
10
10
360
40
0.4
100
130
0.45
0.85 x V
CC
V
CC
-0.4
3.2
Unit
μA
μA
mA
mA
V
V
mA
mA
V
V
V
V
2.4
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at V
IH
.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
May 2003
Rev. 6
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
SRAM AC CHARACTERISTICS
V
CC
= 5.0V, -55°C
≤
T
A
≤
+125°C
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
-35
-70
Min Max Min Max
35
70
35
70
0
3
35
70
20
35
3
3
0
0
20
25
20
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold from Write Time
WSF128K16-XXX
SRAM AC CHARACTERISTICS
V
CC
= 5.0V, -55°C
≤
T
A
≤
+125°C
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW1
t
WHZ1
t
DH
-35
-70
Min Max Min Max
35
70
25
60
25
60
20
30
25
50
0
5
0
5
4
5
20
25
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1. This parameter is guaranteed by design but not tested.
1. This parameter is guaranteed by design but not tested.
FIGURE 3
AC Test Circuit
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
≈
Notes: V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
May 2003
Rev. 6
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WSF128K16-XXX
FIGURE 4 – SRAM TIMING WAVEFORM — READ CYCLE
t
RC
ADDRESS
t
AA
t
RC
ADDRESS
SCS#
t
AA
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
t
ACS
t
CLZ
SOE#
t
CHZ
READ CYCLE 1 (SCS# = OE# = V
IL
, SWE# = V
IH
)
t
OE
t
OLZ
DATA I/O
HIGH IMPEDANCE
t
OHZ
DATA VALID
READ CYCLE 2 (SWE# = V
IH
)
FIGURE 5 – SRAM WRITE CYCLE — SWE# CONTROLLED
t
WC
ADDRESS
t
AW
t
CW
SCS#
t
AH
t
AS
SWE#
t
WP
t
OW
t
WHZ
t
DW
DATA VALID
t
DH
DATA I/O
WRITE CYCLE 1, SWE# CONTROLLED
FIGURE 6 – SRAM WRITE CYCLE — SCS# CONTROLLED
t
WC
ADDRESS
t
AS
SCS#
t
AW
t
CW
t
AH
t
WP
SWE#
t
DW
DATA I/O
DATA VALID
t
DH
WRITE CYCLE 2, SCS# CONTROLLED
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
May 2003
Rev. 6
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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