Datasheet> 器件分类 > 分立半导体> 二极管> 1N5816P

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1N5816P: 产品描述Rectifier Diode, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, DO-4, DO-4, 1 PIN; 产品类别分立半导体二极管; 文件大小246KB，共2页; 制造商Micro Commercial Components (MCC); 标准

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1N5816P概述

Rectifier Diode, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, DO-4, DO-4, 1 PIN

1N5816P规格参数

参数名称	属性值
是否Rohs认证	符合
零件包装代码	DO-4
包装说明	DO-4, 1 PIN
针数	1
Reach Compliance Code	compli
ECCN代码	EAR99
应用	ULTRA FAST RECOVERY
外壳连接	CATHODE
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-4
JESD-30 代码	O-MUPM-D1
JESD-609代码	e3
最大非重复峰值正向电流	400 A
元件数量	1
相数	1
端子数量	1
最大输出电流	20 A
封装主体材料	METAL
封装形状	ROUND
封装形式	POST/STUD MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
最大重复峰值反向电压	150 V
最大反向恢复时间	0.06 µs
表面贴装	NO
端子面层	Matte Tin (Sn)
端子形式	SOLDER LUG
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

1N5812

thru

1N5816

Amp

Ultra Fast

Recovery

Rectifier

50 to 150

Volts

DO-4

Features

•

Full threads eithin 2 1/2 threads

Standard Polarity : Stud is Cathode

•

Maximum Ratings

Operating

Junction

Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Maximum

Recurrent

Peak Reverse

Voltage

50V

75V

100V

125V

150V

Maximum DC

Blocking

Voltage

50V

75V

100V

125V

150V

MCC

Part Number

1N5812

1N5813

1N5814

1N5815

1N5816

Maximum

RMS Voltage

35V

52.5V

70V

87.5V

105V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

F(AV)

FSM

400A

100°C

8.3ms, half sine

1.2V

=20 A ;T

=25°C

DIMENSIONS

INCHES

MAX

Threads

.437

.505

.800

.453

.175

.405

.189

.310

.350

.065

.100

MIN

MAX

Standard

Polarity

10.77

11.10

-----

12.82

15.24

20.32

10.72

11.50

1.91

4.44

-----

10.29

4.15

4.80

-----

7.87

-----

0.51

1.53

8.89

1.65

2.54

NOTE

DIM

MIN

10-32 UNF3A

.424

-----

.600

.422

.075

-----

.163

-----

.020

.060

10uA

1mA

25°C

100°C

=0.5A,I

=1.0A

(REC)

= 0.25A

di / dt = 85 A / uS

Maximum Reverse

Recovery Time

60nS

∅

*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%

Revision: 4

www.mccsemi.com

2004/02/18

1N5816P相似产品对比

	1N5816P	1N5815-BP	1N5814P	1N5812P	1N5812-BP	1N5816-BP	Q36.0-JXS21P4-S-20/15-FU-AEC-LF	1812N153M160VX100HT	1N5813-B	1N5812-B
描述	Rectifier Diode, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, DO-4, DO-4, 1 PIN	Rectifier Diode,	DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, DO-4, DO-4, 1 PIN, Rectifier Diode	DIODE 20 A, 50 V, SILICON, RECTIFIER DIODE, DO-4, DO-4, 1 PIN, Rectifier Diode	Rectifier Diode,	Rectifier Diode,	Series - Fundamental Quartz Crystal,	Ceramic Capacitor, Multilayer, Ceramic, 16V, 20% +Tol, 20% -Tol, C0G, -/+30ppm/Cel TC, 0.015uF, 1812,	Rectifier Diode,	Rectifier Diode,
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	不符合	不符合	不符合
Reach Compliance Code	compli	_compli	unknow	unknow	not_compliant	not_compliant	compliant	compliant	unknown	unknown
ECCN代码	EAR99	EAR99	-	-	EAR99	EAR99	-	EAR99	EAR99	EAR99
JESD-609代码	e3	e3	-	-	e3	e3	e4	-	e0	e0
端子面层	Matte Tin (Sn)	Matte Tin (Sn)	-	-	Matte Tin (Sn)	Matte Tin (Sn)	Nickel/Gold (Ni/Au)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1	1	1	1	1	-	-	1	-

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