Freescale Semiconductor
Technical Data
MRF6S21100H
Rev. 2, 12/2004
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - carrier W - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 950 mA, P
out
= 23 Watts Avg., Full Frequency Band, Channel Band-
width = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.9 dB
Drain Efficiency — 27.6%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39.5 dBc @ 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched, Controlled Q, for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
Low Gold Plating Thickness on Leads, 40
µ
″
Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21100HR3
MRF6S21100HSR3
2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S21100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S21100HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
388
2.2
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 23 W CW
Symbol
R
θJC
Value
(1)
0.45
0.52
Unit
°C/W
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF6S21100HR3 MRF6S21100HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114 - G)
Machine Model (per EIA/JESD22 - A115 - A)
Charge Device Model (per JESD22 - C101- A)
Class
3A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 950 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1
2
—
—
2
2.8
0.21
5.3
3
4
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
±10
MHz Offset. Peak/Avg. = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
15
26
—
—
—
15.9
27.6
- 37
- 39.5
- 16
17
—
- 35
- 38
-9
dB
%
dBc
dBc
dB
MRF6S21100HR3 MRF6S21100HSR3
2
RF Device Data
Freescale Semiconductor
B1
V
BIAS
R1
R2
+
C1
+
C2
C4
C3
C5
Z8
Z5
RF
INPUT
Z1
C6
DUT
Z2
Z3
Z4
Z6
Z7
Z9
Z10
Z11
C7
Z12
RF
OUTPUT
C8
+
C9
+
C10
+
C11
C13
+
C12
V
SUPPLY
+
C14
Z1, Z12
Z2
Z3
Z4
Z5
Z6
1.250″
1.070″
0.330″
0.093″
1.255″
0.160″
x 0.084″
x 0.084″
x 0.800″
x 0.800″
x 0.040″
x 0.880″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.320″ x 0.880″ Microstrip
0.120″ x 0.820″ Microstrip
0.035″ x 0.320″ Microstrip
0.335″ x 0.200″ Microstrip
0.650″ x 0.084″ Microstrip
Arlon GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S21100HR3(SR3) Test Circuit Schematic
Table 5. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values
Part
B1
C1
C2
C3
C4, C13
C5
C6, C7
C8
C9, C10, C11, C12
C14
R1
R2
Ferrite Bead
1.0
µF,
50 V Tantalum Capacitor
10
µF,
50 V Electrolytic Capacitor
1000 pF 100B Chip Capacitor
0.1
µF
100B Chip Capacitors
5.1 pF Chip Capacitor
15 pF Chip Capacitors
6.8 pF Chip Capacitors
22
µF,
35 V Tantalum Capacitors
100
µF,
50 V Electrolytic Capacitor
1.0 kW, 1/8 W Chip Resistor
10
W,
1/8 W Chip Resistor
Description
Part Number
2743019447
T491C105M050
EEV - HB1H100P
100B102JCA500X
CDR33BX104AKWS
100B5R1JCA500X
100B150JCA500X
100B6R8JCA500X
T491X226K035AS4394
515D107M050BB6A
Manufacturer
Fair - Rite
Kemet
Panasonic
ATC
Kemet
ATC
ATC
ATC
Kemet
Vishay/Sprague
MRF6S21100HR3 MRF6S21100HSR3
RF Device Data
Freescale Semiconductor
3
R1
C1
B1 R2
C5
C8
C9 C10
C14
V
GG
C11
C2
C4
C6
C3
C12
V
DD
C13
C7
CUT OUT AREA
HV6
2.1 GHz
NI780
Rev 4
Figure 2. MRF6S21100HR3(SR3) Test Circuit Component Layout
MRF6S21100HR3 MRF6S21100HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
16.2
16
G ps , POWER GAIN (dB)
15.8
IM3−U
IRL
15.4
15.2
ACPR−L
15
2080
2100
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
2120
2140
2160
2180
IM3−L
ACPR−U
−42
−44
2200
−40
IM3 (dBc), ACPR (dBc)
15.6
−38
−10
−20
−30
−40
V
DD
= 28 Vdc
P
out
= 23 W (Avg.)
I
DQ
= 950 mA
η
D
2−Carrier W−CDMA
10 MHz Carrier Spacing
G
ps
−36
28
27
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
η
D
15.4
G ps , POWER GAIN (dB)
15.2
15
14.8
14.6
14.4
2080
V
DD
= 28 Vdc
P
out
= 55 W (Avg.)
I
DQ
= 950 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
IM3−L
IM3−U
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
ACPR−U
ACPR−L
2100
2120
2140
2160
2180
f, FREQUENCY (MHz)
−28
−30
2200
G
ps
42
40
−24
−26
η
D
, DRAIN
EFFICIENCY (%)
15.6
44
IRL
IM3 (dBc), ACPR (dBc)
−10
−20
−30
−40
Figure 4. 2 - Carrier W - CDMA Broadband Performance
17.5
17
G ps , POWER GAIN (dB)
16.5
16
15.5
700 mA
15
14.5
450 mA
14
13.5
1
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
100
500
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1450 mA
1200 mA
950 mA
−20
−25
−30
−35
−40
−45
−50
700 mA
−55
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
950 mA
I
DQ
= 450 mA
1450 mA
1200 mA
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21100HR3 MRF6S21100HSR3
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
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