2SK3535-01
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Applications
for Switching
Foot Print Pattern
Absolute Maximum Ratings at
Tc=25°C
( unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
dV/dt
*3
P
D
T
ch
T
stg
Ratings
250
220
±37
±3.4
*4
±148
±30
37
251.9
20
5
2.4
*4
270
+150
-55 to +150
Unit
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
W
°C
°C
*2 Tch <150°C *3
=
Remarks
V
GS
=30V
Ta=25°C
Equivalent circuit schematic
(4) Drain(D)
(1) Gate(G)
V
DS
<250V
=
Ta=25°C
(2) Source(S)
[signal line]
(3) Source(S)
[power line]
I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
*1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph
=
=
=
*4 Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area:500mm
2
)
Electrical characteristics atT
c
=25°C ( unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=250V
V
DS
=200V
V
GS
=±30V
I
D
=12.5A
V
GS
=0V
V
GS
=0V
V
DS
=0V
V
GS
=10V
T
ch
=25°C
T
ch
=125°C
10
75
16
2000
220
15
20
30
60
20
44
14
16
1.10
0.45
1.5
Min.
250
3.0
Typ.
Max.
5.0
25
250
100
100
3000
330
30
30
45
90
30
66
21
24
1.65
Units
V
V
µA
nA
mΩ
S
pF
I
D
=12.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=72V
I
D
=25A
V
GS
=10V
L=309 µH T
ch
=25°C
I
F
=25A V
GS
=0V T
ch
=25°C
I
F
=25A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
8
ns
nC
37
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
channel to ambient
Min.
Typ.
Max.
0.463
87.0
52.0
Units
°C/W
°C/W
°C/W
*4
1
2SK3535-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
5
300
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
4
Surface mounted on
1000mm
2
,t=1.6mm FR-4 PCB
(Drain pad area : 500mm
2
)
250
200
3
PD [W]
PD [W]
150
2
100
1
50
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
Tc [
°
C]
Tc [
°
C]
Typical Output Characteristics
100
Typical Transfer Characteristic
ID=f(VDS):80µs Pulse test,Tch=25°C
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
20V
80
10V
8V
7.5V
60
100
ID [A]
7.0V
40
6.5V
ID[A]
12
10
1
20
6.0V
VGS=5.5V
0.1
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
9
10
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
Typical Drain-Source on-state Resistance
0.25
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
VGS=
6.0V
5.5V
0.20
6.5V
7.0V
7.5V
10
RDS(on) [
Ω
]
0.15
8V
10V
20V
gfs [S]
0.10
1
0.05
0.1
0.1
1
10
100
0.00
0
20
40
60
80
100
ID [A]
ID [A]
2
2SK3535-01
FUJI POWER MOSFET
270
240
210
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
7.0
6.5
6.0
5.5
5.0
max.
RDS(on) [ m
Ω
]
180
150
max.
120
90
60
30
0
-50
-25
0
25
50
75
100
125
150
typ.
VGS(th) [V]
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
Tch [
°
C]
Tch [
°
C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=25A, Tch=25°C
10
1
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
14
12
Vcc= 36V
72V
Ciss
10
10
0
VGS [V]
8
C [nF]
96V
Coss
6
10
-1
4
2
-2
Crss
10
0
0
10
20
30
40
50
60
10
-1
10
0
10
1
10
2
Qg [C]
VDS [V]
Typical Forward Characteristics of Reverse Diode
100
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
10
3
IF=f(VSD):80µs Pulse test,Tch=25°C
tf
10
10
2
td(off)
IF [A]
t [ns]
tr
td(on)
1
10
1
0.1
0.00
10
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
10
-1
10
0
10
1
10
2
VSD [V]
ID [A]
3
2SK3535-01
FUJI POWER MOSFET
700
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
IAS=15A
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch):Vcc=48V
30
600
25
500
IAS=22A
20
EAS [mJ]
400
IAV [A]
50
75
100
125
150
15
300
IAS=37A
200
10
100
5
0
0
25
0
0
25
50
75
100
125
150
starting Tch [
°
C]
starting Tch [ C]
°
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=48V
100
90
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
Single Pulse
Avalanche Current I
AV
[A]
10
1
Rth(ch-a) [°C/W]
10
-7
80
70
60
50
40
30
10
0
10
-1
20
10
10
-8
10
-2
-6
-5
-4
-3
-2
0
0
1000
2000
3000
2
10
10
10
10
10
4000
5000
t
AV
[sec]
Drain Pad Area [mm ]
http://www.fujielectric.co.jp/denshi/scd/
4
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