Ordering number : ENA0307
2SA2192
SANYO Semiconductors
DATA SHEET
2SA2192
Applications
•
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Relay drivers, lamp drivers, motor drivers.
Features
•
•
•
•
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
PW≤100µs
Conditions
Ratings
--50
--50
--50
--8
--10
--13
--2
0.95
20
150
--55 to +150
Unit
V
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=-
-40V, IE=0A
VEB=-
-4V, IC=0A
VCE=-
-2V, IC=--1A
VCE=-
-5V, IC=--1A
VCB=-
-10V, f=1MHz
IC=--5A, IB=--250mA
IC=--5A, IB=--250mA
200
130
90
--290
--0.93
--580
--1.4
Ratings
min
typ
max
--10
--10
560
MHz
pF
mV
V
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 42506EA MS IM TB-00002245 No. A0307-1/4
2SA2192
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=--100µA, IE=0A
IC=--100µA, RBE=0Ω
IC=--1mA, RBE=∞
IE=--100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
--50
--50
--50
--8
70
650
60
typ
max
Unit
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7518-003
6.5
5.0
2.3
1.5
Package Dimensions
unit : mm
7003-003
6.5
5.0
2.3
1.5
0.5
0.5
4
4
7.0
5.5
5.5
7.0
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
0.85
0.5
1.2
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
RB
+
470µF
RL
+
100µF
IC= --20IB1=20IB2= --3A
VBE=5V
VCC= --20V
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--0.5
IC -- VCE
--20mA
--18mA
--16mA
--14mA
--12mA
--10mA
--10
IC -- VBE
VCE= --2V
--9
Collector Current, IC -- A
Collector Current, IC -- A
--8
--7
--6
--5
--4
--3
--2
--1
--8mA
--6mA
--2mA
IB=0mA
--1.0
--1.5
--2.0
0
0
--0.2
--0.4
--0.6
Ta=
7
5
°
C
25
°
C
--25
°
C
--0.8
--1.0
--4mA
--1.2
IT10710
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
No. A0307-2/4
2SA2192
1000
7
5
hFE -- IC
Gain-Bandwidth Product, fT -- MHz
Ta=75°C
25°C
--25°C
1000
fT -- IC
VCE= --5V
VCE= --2V
7
5
3
2
DC Current Gain, hFE
3
2
100
7
5
3
2
100
7
5
3
2
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
1000
7
5 7 --10
IT10711
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
--1.0
7
5
5 7 --10
IT10712
Cob -- VCB
f=1MHz
VCE(sat) -- IC
IC / IB=20
Output Capacitance, Cob -- pF
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
--0.1
7
5
3
2
100
7
5
3
2
--0.01
7
5
3
2
75
°
C
Ta=
°
C
--25
25
°
C
10
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
7
--0.001
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector-to-Base Voltage, VCB -- V
--10
7
5
IT10713
--10
7
VCE(sat) -- IC
Collector Current, IC -- A
5 7 --10
IT10714
VBE(sat) -- IC
IC / IB=50
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
5
3
2
--1.0
7
5
Ta= --25°C
25
°C
75
°
C
C
75
°
Ta=
°
C
--25
25
°
C
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT10715
3
2
--0.01
--0.01
--0.1
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
Collector Current, IC -- A
1.0
0.95
0.9
7 --10
IT10716
5
PC -- Ta
ICP= --13A (PW≤100µs)
IC= --10A
10µs
Collector Dissipation, PC -- W
s
0
µ
s
0
µ
50
s
10
1m
Collector Current, IC -- A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
0m
s
10
N
o
ms
he
at
sin
k
DC
op
era
n
tio
--0.01
--0.1
Tc=25°C
Single pulse
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
7
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
IT10717
Ambient Temperature, Ta --
°C
IT10718
No. A0307-3/4
2SA2192
25
PC -- Tc
Collector Dissipation, PC -- W
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT10919
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0307-4/4
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
