1N6511
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
SCOTTSDALE DIVISION
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 14-PIN ceramic DIP package for use as
steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing
them either to the positive side of the power supply line or to ground (see Figure 1).
An external TVS diode may be added between the positive supply line and ground to
prevent overvoltage on the supply rail. They may also be used in fast switching core-
driver applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or
encoding applications. These arrays offer many advantages of integrated circuits such
as high-density packaging and improved reliability. This is a result of fewer pick and
place operations, smaller footprint, smaller weight, and elimination of various discrete
packages that may not be as user friendly in PC board mounting.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
14-PIN Ceramic DIP
FEATURES
•
•
•
•
•
•
•
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage V
BR
> 75 V at 5
µA
Low Leakage I
R
< 100nA at 40 V
Low Capacitance C < 4.0 pF
Switching Speeds less than 10 ns
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6511 for a JANTX screen.
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20
µs
MAXIMUM RATINGS
•
•
•
•
•
•
•
Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25
o
C
600 mW Power Dissipation per Package @ 25
o
C (Note 4)
Operating Junction Temperature range –65 to +150
o
C
Storage Temperature range of –65 to +200
o
C
NOTE 1:
NOTE 2:
NOTE 3:
NOTE 4:
.
Each Diode
Pulsed: P
W
= 100 ms max; duty cycle <20%
o
o
Derate at 2.4 mA/ C above +25 C
o
o
Derate at 4.8 mW/ C above +25 C
MECHANICAL AND PACKAGING
•
•
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14-PIN Ceramic DIP
Weight 2.05 grams (approximate)
Marking: Logo, part number, date code
Pin #1 to the left of the indent on top of package
Carrier Tubes; 25 pcs (standard)
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25
o
C unless otherwise specified
1N6511
PART
NUMBER
MAXIMUM
FORWARD
VOLTAGE
V
F1
I
F
= 100 mA
(Note 1)
V
MAXIMUM
REVERSE
CURRENT
I
R1
V
R
= 40 V
µA
MAXIMUM
REVERSE
CURRENT
I
R2
V
R
= 20 V
nA
MAXIMUM
CAPACITANCE
(PIN TO PIN)
V
R
= 0 V
F = 1 MHz
pF
C
t
MAXIMUM
FORWARD
RECOVERY
TIME
t
fr
I
F
= 100 mA
ns
MAXIMUM
REVERSE
RECOVERY TIME
trr
I
F
=
I
R
= 10 mAdc
i
rr
= 1 mAdc
R
L
= 100 ohms
ns
MAXIMUM
FORWARD
VOLTAGE
MATCH
V
F5
I
F
= 10 mA
mV
1N6511
Copyright
2003
5-03-2004 REV A
1
0.1
25
4.0
15
10
5
NOTE 1:
Pulsed: P
W
= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6511
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
SCOTTSDALE DIVISION
SYMBOLS & DEFINITIONS
Symbol
V
BR
V
F
I
R
C
t
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
WWW .
Microsemi
.C
OM
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+V
CC
)
I/O Port
GND (or -V
CC
)
Steering Diode Application
FIGURE 1
1N6511
6511
Copyright
2003
5-03-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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