High Speed GaAlAs Infrared Emitter
OPE5985
The
OPE5985
is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1 package
and has wide beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
•
High speed : 25ns rise time
•
850nm wavelength
•
Wide beam angle
•
Low forward voltage
•
High power and high reliability
•
Available for pulse operating
APPLICATIONS
•
Emitter of IrDA
•
IR Audio and Telephone
•
High speed IR communication
•
IR LANs
•
Available for wireless digital data transmission
DIMENSIONS (Unit : mm)
3.0
3.8
4.6
0.3
5.4
0.8 Max
2-
0.5
23.0 Min
Anode
Cathode
Tolerance :
±0.2mm
STORAGE
•
Condition : 5°C~35°C,R.H.60%
•
Terms : within 3 months from production date
•
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
P
DC
80
Forward current
I
FC
60
CCCCCC
Pulse forward current
I
FPC
0.5
Reverse voltage
V
RC
5.0
Operating temp.
Topr.
-20~ +70
CCCCCCCCCCCCCCC
2
Tsol.
240.
Soldering temp.
1
.Duty ratio = 1/100, pulse width=0.1ms.
2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Forward voltage
V
F
C
Reverse current
I
R
C
Capacitance
Ct
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Cut off frequency
*3
*3
2.0
2.5
(Ta=25)
Unit
C
EC
AC
C
°CC
°CC
Ie
p
C
C
tr/tf
fc
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
Conditions
I
F
=50
EC
V
R
=5VC
f=1
C
EC
I
F
=50
E
B Rank
C Rank
I
F
=50
EC
I
F
=50
C
I
F
=40
C
I
F
=50
C
I
F
D ECEEC
DD EC C
11
Min.
C
C
15
40
55
C
C
C
C
C
Typ.
1.5
C
20
~
~
~
850
45
±25
25/13
14
(Ta=25)
Max.
Unit
2.0
V
10
µEC
C
DDC
/
C
C
C
C
C
C
C
deg.
C
ns
C
MHz
High Speed GaAlAs Infrared Emitter
FORWARD CURRENT Vs.
AMBIENT TEMP.
100
80
60
40
20
0
-20
0
20
40
60
80
Ambient Temperature Ta()
100
20
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
OPE5985
RADIANT INTENSITY Vs.
FORWARD CURRENT.
Ta=25
Ta=25
1
3 5 10
30 50 100 200 500
Forward Current IF(mA)
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
I
F
=50mA
3
2
1
0.8
0.5
0.3
0.2
0.1
-20
0
20
40
60
80
100
1.0
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
Ta=25
0.8
0.6
0.4
0.2
0.0
700
Ambient Temperature Ta()
FORWARD CURRENT Vs.
FORWARD VOLTAGE
Ta=25
750 800 850 900 950
Emission Wavelength
(nm)
100
50
30
20
10
5
4
3
2
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
Ta=25
-20°
-10°
0°
10°
20°
-30°
-40°
-50°
-60°
-70°
-80°
-90°
1.0
30°
40°
50°
60°
70°
80°
90°
1.0
1
1.0
1.1
1.2
1.3
1.4
Forward Voltage V
F
(V)
1.5
1.6
0.5
0
0.5
Relative Radiant intensity
12
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