Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG417B, DG418B, DG419B monolithic CMOS analog
switches were designed to provide high performance
switching of analog signals. Combining low power, low
leakages, high speed, low on-resistance and small physical
size, the DG417B series is ideally suited for portable and
battery powered industrial and military applications requiring
high performance and efficient use of board space.
To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay
Siliconix’s high voltage silicon gate (HVSG) process.
Break-before-make is guaranteed for the DG419B, which is
an SPDT configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
FEATURES
•
•
•
•
•
± 15 V analog signal range
On-resistance - R
DS(on)
: 15
Fast switcing action - t
ON
: 110 ns
TTL and CMOS compatible
8-pin CerDIP package
BENEFITS
•
•
•
•
•
•
Widest dynamic ranges
Low signal errors and distortion
Break-before-make switching action
Simple interfacing
Reduced board space
Improved reliability
APPLICATIONS
•
•
•
•
•
•
•
•
Precision test equipment
Precision instrumentation
Battery powered systems
Sample-and-hold circuits
Military radios
Hi-Rel systems
Guidance and control systems
Hard disk drivers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B, DG418B
Dual-In-Line
S
No connect
GND
V+
1
2
3
4
Top
View
8
7
6
5
D
V-
IN
V
L
TRUTH TABLE
LOGIC
0
1
Notes
• Logic “0”
0.8 V
• Logic “1”
2.4 V
DG417B
On
Off
DG418B
Off
On
DG419B
Dual-In-Line
TRUTH TABLE
(DG419B)
D
S
1
GND
V+
1
2
3
4
Top
View
8
7
6
5
S
2
V-
IN
V
L
LOGIC
0
1
Notes
• Logic “0”
0.8 V
• Logic “1”
2.4 V
SW
1
On
Off
SW
2
Off
On
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
1
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG417BMIL, DG418BMIL, DG419BMIL
www.vishay.com
Vishay Siliconix
ORDERING INFORMATION
PART
DG417B
CONFIGURATION
SPST x 1, NC
TEMP. RANGE
PACKAGE
ORDERING PART
9073704PA
DG417BAK
DG417BAK-E3
9073705PA
DG418B
SPST x 1, NO
- 55 °C to 125 °C
8-pin CerDIP
DG418BAK
DG418BAK-E3
9073706PA
DG419B
SPDT x 1
DG419BAK
DG419BAK-E3
GENERIC
DG417BAK/883
DG417BAK
DG417BAK-E3
DG418BAK/883
DG418BAK
DG418BAK-E3
DG419BAK/883
DG419BAK
DG419BAK-E3
DSCC NUMBER
5962-9073704MPA
-
-
5962-9073705MPA
-
-
5962-9073706MPA
-
-
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltages Referenced to V-
V
L
Digital inputs
a
, V
S
, V
D
Current, (any terminal) continuous
Current (S or D) pulsed at 1 ms, 10 % duty cycle
Storage temperature
Power dissipation
(package)
b
8-pin
CerDIP
c
V+
GND
LIMIT
44
25
(GND - 0.3) to (V+) + 0.3
(V-) - 2 V to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
600
mA
°C
mW
V
UNIT
Notes
a. Signals on S
X
, D
X
or IN
X
exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 8 mW/°C above 75 °C.
SCHEMATIC DIAGRAM
(Typical Channel)
V+
S
V
L
V
-
V
IN
Level
Shift/
Drive
V+
GND
D
V
-
Fig. 1
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
2
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG417BMIL, DG418BMIL, DG419BMIL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
a
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A SUFFIX
- 55 °C to 125 °C
TEMP.
b
Full
I
S
= - 10 mA, V
D
=
±
12.5 V
V+ = 13.5 V, V - = - 13.5 V
Room
Full
Room
Full
DG417B
Switch Off Leakage
Current
I
D(off)
V+ = 16.5, V- = - 16.5 V
V
D
=
±
15.5 V, V
S
=
±
15.5 V
DG418B
DG419B
DG417B
Channel On Leakage
Current
I
D(on)
V+ = 16.5 V, V - = - 16.5 V
V
S
= V
D
=
±
15.5 V
DG418B
DG419B
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Dynamic Characteristics
DG417B
Turn-On Time
t
ON
R
L
= 300
,
C
L
= 35 pF
V
S
=
±
10 V, see switching time
test circuit
Turn-Off Time
t
OFF
DG418B
Transition Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
e
Channel-to-Channel
Crosstalk
e
Source Off
Capacitance
e
Drain Off Capacitance
e
Channel On
Capacitance
e
t
TRANS
t
D
Q
OIRR
X
TALK
C
S(off)
f = 1 MHz, V
S
= 0 V
C
D(off)
DG417B
DG418B
DG417B
C
D(on)
f = 1 MHz, V
S
= 0 V
DG418B
DG419B
R
L
= 300
,
C
L
= 35 pF
V
S1
=
±
10 V, V
S2
=
±
10 V
R
L
= 300
,
C
L
= 35 pF
V
S1
= V
S2
=
±
10 V
R
L
= 50
C
L
= 5 pF,
f = 1 MHz
DG419B
DG419B
DG419B
DG418B
DG417B
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
62
62
62
62
53
53
53
53
60
60
16
38
- 82
dB
- 88
12
12
12
50
50
57
pF
3
pC
89
106
89
106
80
88
80
88
87
96
ns
I
IL
I
IH
Full
Full
- 0.5
- 0.5
0.5
0.5
μA
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
15
15
TYP.
c
MIN.
d
- 15
MAX.
d
15
25
34
- 0.25
- 20
- 0.25
- 20
- 0.25
- 20
- 0.75
- 60
- 0.4
- 40
- 0.4
- 40
- 0.75
- 60
0.25
20
0.25
20
0.25
20
0.75
60
0.4
40
0.4
40
0.75
60
nA
UNIT
V
PARAMETER
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
SYMBOL
V
ANALOG
R
DS(on)
I
S(off)
-
0.1
-
0.1
-
0.1
-
0.1
-
0.1
-
0.1
-
0.1
-
0.1
-
0.4
-
0.4
-
0.4
-
0.4
-
0.4
-
0.4
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
3
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG417BMIL, DG418BMIL, DG419BMIL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
a
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 12 V, V- = - 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A SUFFIX
- 55 °C to 125 °C
TEMP.
b
Room
Full
Room
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 V or 5 V
Full
Room
Full
Room
Full
Full
I
S
= - 10 mA, V
D
=
3.8
V
V+ = 10.8 V
Room
Full
Room
R
L
= 300
,
C
L
= 35 pF
V
S
=
8
V, see switching time test circuit
R
L
= 300
,
C
L
= 35 pF
Full
Room
Full
DG419B
Room
Room
Full
Room
Room
Full
V+ = 13.2 V, V
L
= 5.25 V
V
IN
= 0 V or 5 V
Room
Room
Room
26
26
100
100
38
38
62
95
95
18
0.001
0.001
- 0.001
0.001
- 0.001
-1
-5
-1
-5
1
5
1
5
μA
25
119
153
pC
- 0.001
-1
-5
0
12
35
52
125
155
66
69
ns
V
0.001
- 0.001
-1
-5
1
5
μA
TYP.
c
0.001
MIN.
d
MAX.
d
1
5
UNIT
PARAMETER
Power Supplies
Positive Supply Current
Negative Supply
Current
Logic Supply Current
Ground Current
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
SYMBOL
I+
I-
I
L
I
GND
V
ANALOG
R
DS(on)
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Transition Time
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I-
I
L
I
GND
t
ON
t
OFF
t
D
t
TRANS
Q
R
L
= 300
,
C
L
= 35 pF
V
S1
= 0 V, 8 V, V
S2
= 8 V,0 V
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
4
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG417BMIL, DG418BMIL, DG419BMIL
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
300
R
DS(on)
- Drain-So
u
rce On-Resistance (Ω)
R
DS(on)
- Drain-So
u
rce On-Resistance (Ω)
40
Vishay Siliconix
T
A
= 25 °C
V
L
= 5
V
250
T
A
= 25 °C
35
30
25
±
8V
20
15
10
± 20
V
5
- 20
- 15
- 10
-5
0
5
10
15
20
± 10
V
± 12
V
± 15
V
±5
V
200
V+
= 3
V
V
L
= 3
V
150
100
V+
= 5
V
50
V+
=
8 V
V+
= 12
V
V+
= 15
V
V+
= 20
V
0
0
4
8
12
16
20
V
D
- Drain
Voltage
(V)
V
D
- Drain
Voltage
(V)
On-Resistance vs. V
D
and Unipolar Power Supply Voltage
30
R
DS(on)
- Drain-So
u
rce On-Resistance (Ω)
V
± = ± 15
V
V
L
= 5
V
25
R
DS(on)
- Drain-So
u
rce On-Resistance (Ω)
On-Resistance vs. V
D
and Dual Supply Voltage
50
45
40
35
30
25
- 55 °C
20
15
10
5
V+
= 12
V
V-
= 0
V
V
L
= 5
V
0
2
4
6
8
10
12
125 °C
85
°C
25 °C
20
125 °C
85
°C
15
25 °C
- 55 °C
10
5
- 15
- 10
-5
0
5
10
15
V
D
- Drain
Voltage
(V)
V
D
- Drain
Voltage
(V)
On-Resistance vs. V
D
and Temperature
100
80
60
40
I
D
, I
S
(pA)
20
0
- 20
- 40
- 60
-
80
- 100
-15
- 10
-5
0
5
10
15
I
S(off)
I
D(off)
I
D(on)
V
± = ± 15
V
V
L
= 5
V
T
A
= 25 °C
On-Resistance vs. V
D
and Temperature
100 m
10 m
I+ - S
u
pply C
u
rrent (nA)
1m
100 µ
I+, I-
10 µ
1µ
100 n
10 n
1n
100 p
10
I
L
V
± = ± 15
V
V
L
= 5
V
100
1K
10 K
100 K
1M
10 M
V
D
or
V
S
- Drain or Source
Voltage
(V)
Input Switching Frequency (Hz)
Leakage vs. Analog Voltage
Supply current vs. Input Switching Frequency
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
5
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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