1N5806U
Aerospace 2.5 A fast recovery rectifier
Datasheet
-
production data
Description
A
K
K
This power ultrafast recovery rectifier is designed
and packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2A
package whose footprint is 100% compatible with
industry standard solutions in D5A.
The 1N5806U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
A
Leadless chip carrier 2 (LCC2A)
Features
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Package mass: 0.12 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
ESCC qualified
ESCC
detailed
specification
Table 1. Device summary
(1)
Quality level
Lead
finish
EPPL
I
F(AV)
V
RRM
T
j(max)
VF
(max)
Order code
1N5806UA1
Engineering model Gold
ESCC flight
ESCC flight
Gold
Solder dip
yes
yes
2.5
150
175
1
1N5806U01A 5101/014/13
1N5806U02A 5101/014/14
1. Contact ST sales office for information about the specific conditions for products in die form.
December 2015
This is information on a product in full production.
DocID15986 Rev 4
1/9
www.st.com
Characteristics
1N5806U
1
Characteristics
Table 2. Absolute ratings (limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
T
sol
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward rectified current
Forward surge current
Storage temperature range
Maximum operating junction temperature
Maximum soldering temperature
(1)
T
c
≥
142 °C
δ
= 0.5
t
p
= 8.3 ms sinusoidal
t
p
= 10 ms sinusoidal
Value
150
6
2.5
35
A
33
-65 to + 175
175
245
°C
°C
°C
Unit
V
A
A
1. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.
Table 3. Thermal resistance
Symbol
R
th (j-c) (1)
Junction to case
Parameter
Value
13
Unit
C/W
1. Package mounted on infinite heatsink
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
T
j
= 25 °C
I
R (1)
Reverse current
T
j
= 125 °C
T
j
= 25 °C
T
j
= -65 °C
T
j
= 25
C
V
F (2)
Forward voltage
T
j
= 125
C
T
j
= -65
C
T
j
= 25
C
1. Pulse test: t
p
= 5 ms,
δ
< 2%
2. Pulse test: t
p
= 680 µs,
δ
< 2%
Min.
-
Typ.
-
-
-
-
-
-
-
-
Max.
0.5
20
Unit
V
R
= 150 V
-
-
µA
10
10
880
800
mV
-
I
F
= 2.5 A
-
1075
1000
V
R
= 160 V
-
-
I
F
= 1 A
-
To evaluate the conduction losses use the following equation:
P = 0.70 x
IF(AV)
+ 0.10 x I
F2(RMS )
2/9
DocID15986 Rev 4
1N5806U
Table 5. Dynamic characteristics
Symbol
t
RR
V
FP
t
FR
C
j
Parameter
Reverse recovery time
Forward recovery voltage
Forward recovery time
Diode capacitance
Test conditions
I
F
= I
R
= 0.5 A, I
rr
= 0.05 A, dI/dt = -65 A/µs (min.)
I
F
= 1 A, V
R
= 30 V, dI/dt = -50 A/µs,
I
FM
= 250 mA
I
FM
= 250 mA, V
RF
= 1.1 x V
F
V
R
= 10 V, F = 1 MHz
Characteristics
Min. Typ. Max. Unit
-
-
-
-
-
-
-
-
-
-
25
ns
30
2.2
15
25
V
ns
pF
Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward
current (typical values)
current (maximum values)
I
FM
(A)
I
FM
(A)
10
10
8
8
6
6
4
T
jj
=125 °C
T = 125
4
T
j
= - 65 °C
T
j
= 125 °C
2
T
jj
=25 °C
T = 25°C
2
T
j
= 25°C
°C
T
j
= -65 °C
V
FM
(V)
V
FM
(V)
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse
duration
Z
th(j-c)
/R
th(j-c)
1.0
0.9
I
R
(µA)
1.E+01
1.E+00
T
j
=125 °C
0.8
0.7
LCC2A
1.E-01
T
j
=75 °C
0.6
0.5
0.4
Single pulse
1.E-02
T
j
=25 °C
0.3
1.E-03
0.2
V
R
(V)
1.E-04
0
20
40
60
80
100
120
140
160
0.1
0.0
1.E-06
t
P
(s)
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
DocID15986 Rev 4
3/9
9
Characteristics
Figure 5. Reverse recovery time versus dI
F
/dt
1N5806U
Figure 6. Junction capacitance versus reverse
voltage applied (typical values)
C(pF)
100
I
F
=I
F(AV)
V
R
=120 V
t
RR
(ns)
40
36
32
28
24
20
16
12
8
4
0
0
50
100
150
200
250
300
350
400
450
500
T
j
=25 °C
T
j
=125 °C
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
10
dI
F
/dt(A/µs)
1
1
10
V
R
(V)
100
1000
4/9
DocID15986 Rev 4
1N5806U
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
2.1
Leadless chip carrier 2 (LCC2A) package information
Figure 7. Leadless chip carrier 2 (LCC2A) package outline
A
B
D
Note 1
2
C
1
F
Note 1
Pin 2 Cathode
E
Note 1
E
Pin 1 Anode
H
1
2
r1
G
I
r2
1. The anode is identified by metalization in two top internal angles and the index mark.
DocID15986 Rev 4
5/9
9
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