BFX34
MECHANICAL DATA
Dimensions in mm (inches)
HIGH CURRENT GENERAL
PURPOSE TRANSISTOR
DESCRIPTION:
The BFX34 is a silicon Epitaxial Planar NPN
transistor in a TO-39 case, intended for high
current applications.
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
Very low saturation voltage and high speed
at high current levels make it ideal for power
drivers, power amplifiers, switching power
supplies and relay drive inverters.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
FEATURES
• SILICON EPITAXIAL NPN TRANSISTOR
• HIGH SPEED, LOW SATURATION SWITCH
• CECC SCREENING OPTIONS
45°
TO39 (TO-205AD) Package
Underside View
PIN 2 – BASE
PIN1 – EMITTER
PIN 3 – COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
STG
T
J
Collector – Base Voltage (I
E
= 0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continious Collector Current
Peak Repetitive Collector Current
Continious Base Current
Total Device Dissipation
@ T
A
≤
25°C
@ T
C
≤
25°C
Storage Temperature Range
Junction Temperature
120V
60V
6V
2A
5A
1A
0.87W
5W
–65 to +200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5569
Issue 1
BFX34
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Parameter
I
CES
I
EBO
V
(BR)CBO*
V
CEO(sus)*
V
EBO*
V
CE(sat)*
V
BE(sat)*
h
FE*
Collector Cut-off Current
Emitter Cut-off Current
Collector – Base Breakdown Voltage
Emitter– Base Voltage
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
DC Current Gain
Test Conditions
V
CE
= 60V
V
EB
= 4V
I
C
= 5mA
I
E
= 1mA
I
C
= 5A
I
C
= 5A
I
C
= 1A
I
C
= 1.5A
I
C
= 2A
I
C
= 0.5A
f = 20MHz
I
C
= 0
f = 1MHz
V
CB
= 10V
f = 1MHz
V
CC
= 20V
I
C
= 0.5A
I
B1
= – I
B2
= 0.5A
I
E
= 0
V
EB
= 0.5V
V
BE
= 0
I
C
= 0
I
E
= 0
I
B
= 0
I
C
= 0
I
B
= 0.5A
I
B
= 0.5A
V
CE
= 2V
V
CE
= 0.6V
V
CE
= 2V
V
CE
= 5V
Min.
Typ.
0.02
0.05
Max. Unit
10
10
µA
120
60
6
0.4
1.3
100
75
40
70
80
100
300
40
500
pF
100
0.6
1.2
µs
150
MHz
−
1
1.6
V
Collector – Emitter Sustaining Voltage I
C
= 100mA
f
T*
C
EBO
C
CBO
t
on
t
off
Transition Frequency
Emitter – Base Capacitance
Collector – Base Capacitance
Turn on Time
Turn off Time
* Pulse Duration
=
300µs,duty cycle
≤
2%.
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
35
200
°C/W
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5569
Issue 1
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