Ordering number : ENN7806A
2SK3704
2SK3704
Features
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC Converter.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
60
±20
45
180
2.0
30
150
--55 to +150
303
45
Unit
V
V
A
A
W
W
°C
°C
mJ
A
*1 VDD=20V, L=200µH, IAV=45A
*2 L≤200µH, single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=
±16V,
VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=23A
ID=23A, VGS=10V
ID=23A, VGS=4V
Ratings
min
60
1
±10
1.2
22
32
10.5
15
14
21
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : K3704
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1504 TS IM TB-00000498 / 21004QA TS IM TB-00000013 No.7806-1/4
2SK3704
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=45A
VDS=30V, VGS=10V, ID=45A
VDS=30V, VGS=10V, ID=45A
IS=45A, VGS=0
Ratings
min
typ
3500
500
350
26
175
265
210
67
10.6
10
1.0
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
2063A
10.0
3.2
4.5
2.8
3.5
7.2
16.0
18.1
5.6
14.0
1.6
1.2
0.75
1 2
3
2.55
2.4
0.7
2.55
2.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
2.55
2.55
Switching Time Test Circuit
VIN
10V
0V
VIN
ID=23A
RL=1.3Ω
VDD=30V
Unclamped Inductive Test Circuit
L
≥50Ω
DUT
D
PW=10µs
D.C.≤1%
VOUT
10V
0V
50Ω
VDD
G
2SK3704
P.G
50Ω
S
No.7806-2/4
2SK3704
80
70
60
50
40
30
20
10
0
0
ID -- VDS
Tc=25°C
10V
8V
80
70
ID -- VGS
25
°
C
Tc=
--25
°
C
VDS=10V
6V
Drain Current, ID -- A
Drain Current, ID -- A
4V
60
50
40
30
25
°
C
10
0
0
°
C
75
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tc=
--
3.0
25
°
C
3.5
VGS=3V
20
75
°
C
4.0
4.5
IT06615
125
150
IT06617
1.5
IT06619
Drain-to-Source Voltage, VDS -- V
35
IT06614
30
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
ID=23A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
30
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
25
25
20
20
15
23
I D=
=4V
VGS
A,
15
Tc=75
°
C
25°C
=10V
VGS
,
23A
I D=
10
10
--25°C
5
0
0
5
1
2
3
4
5
6
7
8
9
10
0
--50
--25
0
25
50
75
100
Gate-to-Source Voltage, VGS -- V
100
y
fs -- ID
IT06616
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.3
Case Temperature, Tc --
°C
IF -- VSD
VGS=0
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
10
7
5
3
2
1.0
VDS=10V
=
Tc
75
°
C
Tc=7
5
°
C
25
°
--2
°
C
25
5
°
C
Forward Drain Current, IF -- A
C
7
5
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
1000
7
7 100
IT06618
10000
7
5
5
0.6
--25
°
C
0.9
1.2
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=30V
VGS=10V
td(off)
Switching Time, SW Time -- ns
5
3
2
Ciss
Ciss, Coss, Crss -- pF
3
2
tf
100
7
5
3
2
10
0.1
1000
7
5
3
2
100
tr
Coss
Crss
td(on)
2
3
5 7 1.0
2
3
5 7 10
2
3
5
7 100
0
5
10
15
20
25
30
IT06621
Drain Current, ID -- A
IT06620
Drain-to-Source Voltage, VDS -- V
No.7806-3/4
2SK3704
10
9
VGS -- Qg
VDS=30V
ID=45A
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=180A
<10µs
Gate-to-Source Voltage, VGS -- V
8
Drain Current, ID -- A
ID=45A
10
1m
10
µ
s
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0
µ
s
Operation in this area
is limited by RDS(on).
10
10 ms
0m
DC
s
op
era
tio
n
s
0.1
0.1
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.5
IT06622
35
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
5 7 100
IT06623
PD -- Tc
Allowable Power Dissipation, PD -- W
30
2.0
25
1.5
20
1.0
15
10
0.5
5
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT06624
Case Temperature, Tc --
°C
IT06625
Note on usage : Since the 2SK3704 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2004. Specifications and information herein are subject
to change without notice.
PS No.7806-4/4
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