74CBTLV3253-Q100
Dual 1-of-4 multiplexer/demultiplexer
Rev. 1 — 3 April 2013
Product data sheet
1. General description
The 74CBTLV3253-Q100 provides a dual 1-of-4 high-speed multiplexer/demultiplexer
with two common select inputs (S0, S1) and two output enable inputs (1OE, 2OE). The
low ON resistance of the switch allows inputs to be connected to outputs without adding
propagation delay or generating additional ground bounce noise. When pin nOE = LOW,
one of the four switches is selected (low-impedance ON-state) with pins S0 and S1. When
pin nOE = HIGH, all switches are in the high-impedance OFF-state, independent of pins
S0 and S1. To ensure the high-impedance OFF-state during power-up or power-down,
nOE should be tied to the V
CC
through a pull-up resistor. The current-sinking capability of
the driver determines the minimum value of the resistor.
Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 2.3 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Supply voltage range from 2.3 V to 3.6 V
High noise immunity
Complies with JEDEC standard:
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)
5
switch connection between two ports
Rail to rail switching on data I/O ports
CMOS low power consumption
Latch-up performance exceeds 250 mA per JESD78B Class I level A
I
OFF
circuitry provides partial Power-down mode operation
Multiple package options
NXP Semiconductors
74CBTLV3253-Q100
Dual 1-of-4 multiplexer/demultiplexer
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74CBTLV3253D-Q100
40 C
to +125
C
SO16
TSSOP16
Description
plastic small outline package; 16 leads; body
width 3.9 mm
plastic thin shrink small outline package;
16 leads; body width 4.4 mm
Version
SOT109-1
SOT403-1
Type number
74CBTLV3253PW-Q100
40 C
to +125
C
74CBTLV3253BQ-Q100
40 C
to +125
C
DHVQFN16 plastic dual-in-line compatible thermal
SOT763-1
enhanced very thin quad flat package; no leads;
16 terminals; body 2.5
3.5
0.85 mm
4. Functional diagram
1A
7
6
1B1
5
1B2
4
1B3
3
1B4
2A
9
10
2B1
11
2B2
12
2B3
13
2B4
S0
14
S1
2
1OE
1
2OE
15
001aal208
Fig 1.
Logic diagram
74CBTLV3253_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2013
2 of 18
NXP Semiconductors
74CBTLV3253-Q100
Dual 1-of-4 multiplexer/demultiplexer
5. Pinning information
5.1 Pinning
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2(
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(1) This is not a supply pin. The
substrate is attached to this pad
using conductive die attach
material. There is no electrical or
mechanical requirement to
solder this pad. However, if it is
soldered, the solder land should
remain floating or be connected
to GND.
Fig 2.
Pin configuration
SOT109-1 (SO16)
Fig 3.
Pin configuration
SOT403-1 (TSSOP16)
Fig 4.
Pin configuration
SOT763-1 (DHVQFN16)
5.2 Pin description
Table 2.
Symbol
1OE, 2OE
S0, S1
1B1 to 1B4
2B1 to 2B4
GND
1A, 2A
V
CC
Pin description
Pin
1, 15
14, 2
6, 5, 4, 3
10, 11, 12, 13
8
7, 9
16
Description
output enable input (active LOW)
select input
B input/output
B input/output
ground (0 V)
A input/output
supply voltage
74CBTLV3253_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2013
3 of 18
NXP Semiconductors
74CBTLV3253-Q100
Dual 1-of-4 multiplexer/demultiplexer
6. Functional description
Table 3.
Inputs
1OE
X
H
L
L
L
L
[1]
Function table
[1]
Function switch
2OE
H
X
L
L
L
L
S1
X
X
L
L
H
H
S0
X
X
L
H
L
H
disconnect 2A and 2Bn
disconnect 1A and 1Bn
1A to 1B1 and 2A to 2B1
1A to 1B2 and 2A to 2B2
1A to 1B3 and 2A to 2B3
1A to 1B4 and 2A to 2B4
H = HIGH voltage level; L = LOW voltage level.
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
SW
I
IK
I
SK
I
SW
I
CC
I
GND
T
stg
P
tot
[1]
[2]
[3]
Parameter
supply voltage
input voltage
switch voltage
input clamping current
switch clamping current
switch current
supply current
ground current
storage temperature
total power dissipation
Conditions
control inputs
enable and disable mode
V
I
<
0.5
V
V
I
<
0.5
V
V
SW
= 0 V to V
CC
[1]
[2]
Min
0.5
0.5
0.5
50
50
-
-
100
65
Max
+4.6
+4.6
V
CC
+ 0.5
-
-
128
+100
-
+150
500
Unit
V
V
V
mA
mA
mA
mA
mA
C
mW
T
amb
=
40 C
to +125
C
[3]
-
The minimum input voltage rating may be exceeded if the input clamping current ratings are observed.
The switch voltage ratings may be exceeded if switch clamping current ratings are observed
For TSSOP16 packages: P
tot
derates linearly with 5.5 mW/K above 60
C.
For DHVQFN16 packages: P
tot
derates linearly with 4.5 mW/K above 60
C.
8. Recommended operating conditions
Table 5.
Symbol
V
CC
V
I
V
SW
T
amb
t/V
[1]
Recommended operating conditions
Parameter
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
V
CC
= 2.3 V to 3.6 V
[1]
Conditions
Min
2.3
0
Max
3.6
3.6
V
CC
+125
200
Unit
V
V
V
C
ns/V
enable and disable mode
0
40
0
Applies to control signal levels.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
74CBTLV3253_Q100
Product data sheet
Rev. 1 — 3 April 2013
4 of 18
NXP Semiconductors
74CBTLV3253-Q100
Dual 1-of-4 multiplexer/demultiplexer
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
IH
V
IL
I
I
I
S(OFF)
I
S(ON)
I
OFF
I
CC
HIGH-level
input voltage
Conditions
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
T
amb
=
40 C
to +85
C
Min
1.7
2.0
-
-
-
-
-
-
-
Typ
[1]
-
-
-
-
-
-
-
-
-
Max
-
-
0.7
0.9
1
1
1
10
10
T
amb
=
40 C
to +125
C
Unit
Min
1.7
2.0
-
-
-
-
-
-
-
Max
-
-
0.7
0.9
20
20
20
50
50
V
V
V
V
A
A
A
A
A
LOW-level input V
CC
= 2.3 V to 2.7 V
voltage
V
CC
= 3.0 V to 3.6 V
input leakage
current
pin nOE; V
I
= GND to V
CC
;
V
CC
= 3.6 V
OFF-state
V
CC
= 3.6 V; see
Figure 5
leakage current
ON-state
V
CC
= 3.6 V; see
Figure 6
leakage current
power-off
V
I
or V
O
= 0 V to 3.6 V;
leakage current V
CC
= 0 V
supply current
V
I
= GND or V
CC
; I
O
= 0 A;
V
SW
= GND or V
CC
;
V
CC
= 3.6 V
pin nOE; V
I
= V
CC
0.6 V;
V
SW
= GND or V
CC
;
V
CC
= 3.6 V
pin nOE; V
CC
= 3.3 V;
V
I
= 0 V to 3.3 V
V
CC
= 3.3 V; V
I
= 0 V to 3.3 V
V
CC
= 3.3 V; V
I
= 0 V to 3.3 V
[2]
I
CC
additional
supply current
input
capacitance
OFF-state
capacitance
ON-state
capacitance
-
-
300
-
2000
A
C
I
C
S(OFF)
C
S(ON)
-
-
-
0.9
5.2
20.0
-
-
-
-
-
-
-
-
-
pF
pF
pF
[1]
[2]
All typical values are measured at T
amb
= 25
C.
One input at 3 V, other inputs at V
CC
or GND.
9.1 Test circuits
V
CC
V
IH
Is
V
CC
V
IL
Is
Is
nOE
nBn
GND
nA
nOE
nA
GND
nBn
VO
A
Vl
A
VO
Vl
A
001aai101
001aai103
V
I
= V
CC
or GND and V
O
= GND or V
CC
.
V
I
= V
CC
or GND and V
O
= open circuit.
Fig 5.
Test circuit for measuring OFF-state leakage
current (one switch)
Fig 6.
Test circuit for measuring ON-state leakage
current (one switch)
74CBTLV3253_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2013
5 of 18
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