DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4092
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
•
Low on-state resistance
R
DS(on)
= 0.4
Ω
MAX. (V
GS
= 10 V, I
D
= 10 A)
•
Low gate charge
Q
G
= 50 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 21 A)
•
Gate voltage rating:
±30
V
•
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK4092-A
Note
LEAD PLATING
Sn-Ag-Cu
PACKING
100 p/package
PACKAGE
TO-3P (MP-88) typ. 5.0 g
Note
Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
(TO-3P)
600
±30
±21
±60
200
3
150
−55
to
+150
21
29.4
V
V
A
A
W
W
°C
°C
A
mJ
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18776EJ1V0DS00 (1st edition)
Date Published May 2007 NS
Printed in Japan
2007
2SK4092
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
DS
= 10 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 150 V, I
D
= 10 A,
V
GS
= 10 V,
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
μ
A
nA
V
S
2.5
4.0
3.0
3.5
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
0.34
3240
550
3
38
15
58
12
0.4
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 450 V,
V
GS
= 10 V,
I
D
= 21 A
I
F
= 21 A, V
GS
= 0 V
I
F
= 21 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
50
24
17
0.9
480
6000
1.5
V
F(S-D)
t
rr
Q
rr
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
R
G
Wave Form
50
Ω
0
10%
V
GS
90%
V
DD
V
DS
90%
90%
10%
10%
I
AS
I
D
V
DD
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D18776EJ1V0DS
2SK4092
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
250
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
P
T
- Total Power Dissipation - W
200
150
100
50
0
0
25
50
75
100
125
150
T
ch
- Channel Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
100
I
D(DC)
I
D(pulse)
PW
T
C
- Case Temperature -
°C
=1
i
I
D
- Drain Current - A
00
μ
s
10
1
0.1
0.01
0.001
1
R
S
(V
G
( on
DS
)
it ed
Lim )
0V
= 1
i
1
i
m
i
s
w
Po
D
er
is
si
1
i
0
m
i
s
t io
pa
n
d
it e
m
Li
T
C
= 25°C
Single Pulse
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 41.67°C/Wi
10
1
R
th(ch-C)
= 0.625°C/Wi
0.1
Single Pulse
0.01
100
μ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet D18776EJ1V0DS
3
2SK4092
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
50
V
GS
= 20 V
40
I
D
- Drain Current - A
I
D
- Drain Current - A
100
V
DS
= 10 V
Pulsed
10
30
20
10
10 V
1
0.1
T
ch
=
−55°C
−25°C
25°C
75°C
125°C
150°C
Pulsed
0
0
10
20
30
40
50
V
DS
- Drain to Source Voltage - V
0.01
0
5
10
15
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
5
4
3
2
1
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
100
V
DS
= 10 V
Pulsed
10
T
ch
=
−55°C
−25°C
25°C
1
75°C
125°C
150°C
0.1
V
DS
= 10 V
I
D
= 1 mA
0.01
0.01
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
2
Pulsed
2
Pulsed
1.5
1.5
1
1
V
GS
= 10 V
0.5
20 V
0
0.1
1
10
100
I
D
- Drain Current - A
0.5
I
D
= 21 A
10 A
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
4
Data Sheet D18776EJ1V0DS
2SK4092
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
2
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
V
GS
= 10 V
Pulsed
1.5
1000
100
10
1
0.1
C
iss
1
C
oss
I
D
= 21 A
0.5
10 A
V
GS
= 0 V
f = 1 MHz
0.1
1
10
C
rss
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
100
1000
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
12
10
V
GS
8
6
4
V
DS
2
I
D
= 21 A
0
0
10
20
30
40
50
60
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
t
f
100
t
d(on)
t
r
10
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
Ω
1
0.1
1
10
100
t
d(off)
500
400
300
200
100
0
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
I
F
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
1000
10
V
GS
= 10 V
1
0V
0.1
Pulsed
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
100
di/dt = 100 A/μs
V
GS
= 0 V
10
0.1
1
10
100
I
F
- Diode Forward Current - A
Data Sheet D18776EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
V
DD
= 450 V
300 V
150 V
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