DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4082
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
•
Low on-state resistance
R
DS(on)
= 2.2
Ω
MAX. (V
GS
= 10 V, I
D
= 1.8 A)
•
Low gate charge
Q
G
= 13 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 3.5 A)
•
Gate voltage rating:
±30
V
•
Avalanche capability ratings
(Isolated TO-220)
ORDERING INFORMATION
PART NUMBER
2SK4082-S17-AY
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube 50 p/tube
PACKAGE
Isolated TO-220 (MP-45F) typ. 2.2 g
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
±30
±3.5
±14
35
2.0
150
−55
to
+150
2
240
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18786EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
2007
2SK4082
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 1.8 A
V
GS
= 10 V, I
D
= 1.8 A
V
DS
= 10 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 150 V, I
D
= 1.8 A,
V
GS
= 10 V,
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
μ
A
nA
V
S
2.5
0.8
3.0
3.5
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
1.7
550
250
49
13
10
26
21
2.2
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 450 V,
V
GS
= 10 V,
I
D
= 3.5 A
I
F
= 3.5 A, V
GS
= 0 V
I
F
= 3.5 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
13
4.3
5.2
0.87
220
840
1.5
V
F(S-D)
t
rr
Q
rr
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
R
G
Wave Form
50
Ω
0
10%
V
GS
90%
V
DD
V
DS
90%
90%
10%
10%
I
AS
I
D
V
DD
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D18786EJ1V0DS
2SK4082
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
40
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
P
T
- Total Power Dissipation - W
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
T
ch
- Channel Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
C
- Case Temperature -
°C
DRAIN CURRENT vs. CASE TEMPERATURE
100
I
D(pulse)
4
PW
3.5
=1
i
10
I
D
- Drain Current - A
1
R
(
DS
)
on
GS
(V
d
it e
Lim V )
i
0
=1
I
D
- Drain Current - A
I
D(DC)
1
i
m
i
00
μ
s
3
2.5
2
1.5
1
0.5
0
s
1
i
0
m
i
w
Po
D
er
s
0.1
0.01
0.001
T
C
= 25°C
Single Pulse
p
si
is
io
at
n
d
it e
m
Li
0.1
1
10
100
1000
0
25
50
75
100
125
150
V
DS
- Drain to Source Voltage - V
T
C
- Case Temperature -
°C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 62.5°C/Wi
10
R
th(ch-C)
= 3.57°C/Wi
1
0.1
Single Pulse
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18786EJ1V0DS
3
2SK4082
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
6
5
I
D
- Drain Current - A
I
D
- Drain Current - A
10
V
DS
= 10 V
Pulsed
V
GS
= 20 V
4
3
2
1
Pulsed
0
0
2
4
6
8
10
V
DS
- Drain to Source Voltage - V
1
T
ch
=
−55°C
−40°C
−25°C
25°C
75°C
125°C
150°C
0
4
8
12
16
20
10 V
0.1
0.01
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
6
5
4
3
2
1
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
10
V
DS
= 10 V
Pulsed
1
T
ch
=
−55°C
−40°C
−25°C
25°C
75°C
125°C
150°C
0.1
V
DS
= 10 V
I
D
= 1 mA
0.01
0.01
0.1
1
10
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
6
5
4
3
2
1
Pulsed
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
6
5
4
3
2
1
0
0.01
V
GS
= 10 V
20 V
Pulsed
0.1
1
10
100
I
D
= 3.5 A
1.8 A
I
D
- Drain Current - A
4
Data Sheet D18786EJ1V0DS
2SK4082
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
6
5
4
3
2
1
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
V
GS
= 10 V
Pulsed
I
D
= 3.5 A
1000
C
iss
100
C
oss
10
V
GS
= 0 V
f = 1 MHz
1
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
1.8 A
C
rss
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
12
10
8
V
GS
6
4
V
DS
I
D
= 3.5 A
0
0
0
2
4
6
8
10
12
14
2
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
500
400
300
200
100
t
f
100
t
d(off)
t
d(on)
10
t
r
1
0.1
1
10
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
I
F
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
1000
10
V
GS
= 10 V
1
100
0.1
0V
Pulsed
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
di/dt = 100 A/μs
V
GS
= 0 V
10
0.1
1
10
100
I
F
- Diode Forward Current - A
Data Sheet D18786EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
Ω
V
DD
= 450 V
300 V
150 V
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
