DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4081
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
•
Low on-state resistance
R
DS(on)
= 5
Ω
MAX. (V
GS
= 10 V, I
D
= 1.0 A)
•
Low gate charge
Q
G
= 7.2 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
•
Gate voltage rating:
±30
V
•
Avalanche capability ratings
<R>
ORDERING INFORMATION
PART NUMBER
2SK4081-S15-AY
Note
Note
Note
Note
LEAD PLATING
PACKING
Tube 70 p/tube
PACKAGE
TO-251 (MP-3-a) typ. 0.39 g
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
2SK4081(1)-S27-AY
2SK4081-ZK-E1-AY
2SK4081-ZK-E2-AY
Pure Sn (Tin)
Tube 75 p/tube
Tape 2500 p/reel
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
(TO-251)
600
±30
±2.0
±8.0
30
1.0
150
−55
to
+150
1.4
117
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
P
T2
T
ch
T
stg
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18785EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK4081
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 1.0 A
V
GS
= 10 V, I
D
= 1.0 A
V
DS
= 10 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 150 V, I
D
= 1.0 A,
V
GS
= 10 V,
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
μ
A
nA
V
S
2.5
0.35
3.0
3.5
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
4.2
230
95
11
11
7
13
13.5
5
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 450 V,
V
GS
= 10 V,
I
D
= 2.0 A
I
F
= 2.0 A, V
GS
= 0 V
I
F
= 2.0 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
7.2
2.9
3.0
0.87
175
550
1.5
V
F(S-D)
t
rr
Q
rr
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
R
G
Wave Form
50
Ω
0
10%
V
GS
90%
V
DD
V
DS
90%
90%
10%
10%
I
AS
I
D
V
DD
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D18785EJ2V0DS
2SK4081
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
30
25
20
15
10
5
0
0
25
50
75
100
125
150
T
ch
- Channel Temperature -
°C
T
C
- Case Temperature -
°C
DRAIN CURRENT vs. CASE TEMPERATURE
2.5
FORWARD BIAS SAFE OPERATING AREA
100
10
I
D
- Drain Current - A
I
D(pulse)
I
D(DC)
1
i
PW
=1
i
1
0.1
0.01
R
D GS
(V
o
S(
n)
I
D
- Drain Current - A
00
2
μ
s
d
it e
Lim V )
i
0
=1
1.5
1
0.5
0
m
i
s
1
i
0
w
Po
D
er
is
p
si
io
at
n
m
i
s
d
it e
m
Li
T
C
= 25°C
Single Pulse
0.001
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
0
25
50
75
100
125
150
T
C
- Case Temperature -
°C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 125°C/Wi
100
10
R
th(ch-C)
= 4.167°C/Wi
1
0.1
Single Pulse
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18785EJ2V0DS
3
2SK4081
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
6
5
I
D
- Drain Current - A
10
V
DS
= 10 V
Pulsed
V
GS
= 20 V
10 V
I
D
- Drain Current - A
4
3
2
1
1
T
ch
=
−55°C
−40°C
−25°C
25°C
75°C
125°C
150°C
0
4
8
12
16
20
0.1
Pulsed
0
0
5
10
15
20
25
30
35
V
DS
- Drain to Source Voltage - V
0.01
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - S
6
5
4
3
2
1
0
-75
-25
25
75
125
175
V
DS
= 10 V
I
D
= 1 mA
10
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 10 V
Pulsed
1
25°C
75°C
125°C
150°C
T
ch
=
−55°C
−40°C
−25°C
0.1
0.01
0.01
0.1
1
10
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance -
Ω
12
10
8
6
4
2
Pulsed
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
12
10
8
6
V
GS
= 10 V
4
20 V
2
Pulsed
0
0.01
0.1
1
10
I
D
= 2.0 A
1.0 A
I
D
- Drain Current - A
4
Data Sheet D18785EJ2V0DS
2SK4081
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
12
10
8
6
1.0 A
4
2
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
V
GS
= 10 V
Pulsed
I
D
= 2.0 A
1000
C
iss
100
10
1
0.1
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
12
V
DD
= 450 V
300 V
150 V
V
GS
300
200
100
0
V
DS
I
D
= 2.0 A
0
0
1
2
3
4
5
6
7
8
6
4
2
10
8
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
500
400
100
t
f
t
d(off)
t
d(on)
10
t
r
1
0.1
1
I
D
- Drain Current - A
10
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
I
F
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
1000
10
V
GS
= 10 V
1
100
0.1
0V
Pulsed
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
di/dt = 100 A/μs
V
GS
= 0 V
10
0.1
1
I
F
- Diode Forward Current - A
10
Data Sheet D18785EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
Ω
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