DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4078
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK4078-ZK-E1-AY
2SK4078-ZK-E2-AY
Note
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
typ. 0.27 g
Note
Pb-free (This product does not contain Pb in external electrode.)
FEATURES
•
Low on-state resistance
R
DS(on)1
= 8.5 mΩ MAX. (V
GS
= 10 V, I
D
= 25 A)
R
DS(on)2
= 14.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 13 A)
•
Low input capacitance
C
iss
= 2300 pF TYP.
•
Logic level drive type
(TO-252)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
40
±20
±50
±150
45
1.0
150
−55
to
+150
23
52
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
=
25°C, V
DD
= 20 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
μ
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
2.77
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18885EJ1V0DS00 (1st edition)
Date Published July 2007 NS
Printed in Japan
2007
2SK4078
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 40 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 25 A
V
GS
= 10 V, I
D
= 25 A
V
GS
= 4.5 V, I
D
= 13 A
V
DS
= 10 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 20 V, I
D
= 25 A,
V
GS
= 10 V,
R
G
= 0
Ω
MIN.
TYP.
MAX.
1
±100
UNIT
μ
A
nA
V
S
1.5
7.0
2.0
2.5
Drain to Source On-state Resistance
6.3
9.5
2300
360
220
12
15
51
9
8.5
14.0
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 32 V,
V
GS
= 10 V,
I
D
= 50 A
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
45
7
13
1.5
30
26
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D18885EJ1V0DS
2SK4078
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
60
120
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
P
T
- Total Power Dissipation - W
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
1000
100
I
D
- Drain Current - A
( on
DS
)
R
S
G
(V
d
it e
Lim )
V
i
0
=1
I
D(pulse)
PW
=1
i
00
I
D(DC)
DC
Po
w
1
i
μ
s
10
1
0.1
T
C
= 25°C
Single Pulse
1
i
m
s
i
er
D
0
m
i
is
si
p
s
at
io
n
Li
m
it e
d
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 125°C/Wi
100
10
R
th(ch-C)
= 2.77°C/Wi
1
Single Pulse
0.1
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18885EJ1V0DS
3
2SK4078
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
150
V
GS
= 10 V
I
D
- Drain Current - A
I
D
- Drain Current - A
1000
100
4.5 V
10
1
0.1
0.01
Pulsed
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
T
ch
=
−55°C
25°C
75°C
150°C
100
50
0
0
0.5
1
1.5
2
V
DS
- Drain to Source Voltage - V
0.001
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2.5
2
1.5
1
0.5
0
-100
V
DS
= 10 V
I
D
= 1 mA
-50
0
50
100
150
200
100
T
ch
=
−55°C
25°C
10
1
75°C
150°C
V
DS
= 10 V
Pulsed
0.1
0.1
1
10
100
T
ch
- Channel Temperature -
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
16
12
V
GS
= 4.5 V
8
4
0
1
10
I
D
- Drain Current - A
100
10 V
20
Pulsed
16
12
8
4
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
I
D
= 10 A
25 A
50 A
4
Data Sheet D18885EJ1V0DS
2SK4078
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
20
16
V
GS
= 4.5 V, I
D
= 13 A
12
8
10 V, 25 A
4
Pulsed
0
-100
-50
0
50
100
150
200
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
1000
C
oss
100
V
GS
= 0 V
f = 1 MHz
10
0.1
1
10
100
C
rss
T
ch
- Channel Temperature -
°
C
SWITCHING CHARACTERISTICS
100
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
12
V
DD
= 32 V
20 V
8V
V
GS
- Gate to Source Voltage - V
t
d(off)
t
r
10
t
f
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0
Ω
1
0.1
1
10
100
t
d(on)
35
30
25
20
15
10
5
0
0
9
V
GS
6
V
DS
3
I
D
= 50 A
0
10
20
30
40
50
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
10
1
0.1
Pulsed
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
V
GS
= 10 V
100
0V
10
di/dt = 100 A/μs
V
GS
= 0 V
1
0.1
1
10
100
I
F
- Diode Forward Current - A
Data Sheet D18885EJ1V0DS
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
