DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
•
Low on-state resistance
R
DS(on)1
= 7.0 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−10
A)
R
DS(on)2
= 9.0 mΩ MAX. (V
GS
=
−3.0
V, I
D
=
−10
A)
R
DS(on)3
= 20 mΩ MAX. (V
GS
=
−2.5
V, I
D
=
−10
A)
•
2.5 V drive available
•
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SJ687-ZK-E1-AY
2SJ687-ZK-E2-AY
Note
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
0.27 g TYP.
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
(TO-252)
−20
m12
m20
m60
36
1.0
150
−55
to
+150
−20
40
V
V
A
A
W
W
°C
°C
A
mJ
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
=
−10
V, R
G
= 25
Ω,
V
GS
=
−12 →
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SJ687
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
Note
TEST CONDITIONS
V
DS
=
−20
V, V
GS
= 0 V
V
GS
=
m12
V, V
DS
= 0 V
V
DS
=
−10
V, I
D
=
−1
mA
V
DS
=
−10
V, I
D
=
−10
A
V
GS
=
−4.5
V, I
D
=
−10
A
V
GS
=
−3.0
V, I
D
=
−10
A
V
GS
=
−2.5
V, I
D
=
−10
A
V
DS
=
−10
V,
V
GS
= 0 V,
f = 1 MHz
V
DD
=
−10
V, I
D
=
−10
A,
V
GS
=
−4.5
V,
R
G
= 3
Ω
MIN.
TYP.
MAX.
−10
m100
UNIT
μ
A
nA
V
S
<R>
<R>
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
−0.6
20
−1.2
−1.45
Drain to Source On-state Resistance
R
DS(on)1
R
DS(on)2
R
DS(on)3
5.4
7.1
10.8
4400
1070
760
36
220
270
310
7.0
9.0
20
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
−16
V,
V
GS
=
−4.5
V,
I
D
=
−20
A
I
F
=
−20
A, V
GS
= 0 V
I
F
=
−20
A, V
GS
= 0 V,
di/dt =
−100
A/
μ
s
57
12
28
0.85
200
240
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
=
−12 →
0 V
−
I
D
V
DD
50
Ω
L
V
DD
PG.
BV
DSS
V
DS
V
GS
(−)
0
τ
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
R
G
V
DD
V
DS
(−)
90%
10% 10%
90%
V
GS
(−)
V
GS
Wave Form
0
10%
V
GS
90%
I
AS
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D18719EJ2V0DS
2SJ687
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
P
T
- Total Power Dissipation - W
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
ch
- Channel Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
C
- Case Temperature -
°C
100
80
60
40
20
0
-1000
I
D
- Drain Current - A
-100
I
D(pulse)
I
D(DC)
-10
R
DS(on)
Limited
(V
GS
=
−4.5
V)
Po
w
er
D
PW = 1 ms
is
si
p
at
io
10 ms
n
Li
m
it e
d
-1
T
C
= 25°C
Single Pulse
-0.1
-0.1
-1
-10
-100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 125°C/Wi
100
10
R
th(ch-C)
= 3.47°C/Wi
1
0.1
Single Pulse
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18719EJ2V0DS
3
2SJ687
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-100
-10
V
DS
=
−10
V
Pulsed
-60
I
D
- Drain Current - A
-40
I
D
- Drain Current - A
V
GS
=
−4.5
V
−2.5
V
-1
-0.1
-0.01
-0.001
T
ch
=
−55°C
−25°C
25°C
75°C
125°C
150°C
0
-1
-2
-3
-20
Pulsed
0
0
-1
-2
-3
V
DS
- Drain to Source Voltage - V
-0.0001
V
GS
- Gate to Source Voltage - V
<R>
V
GS(off)
– Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-2
100
T
ch
=
−55°C
−25°C
10
-1.5
-1
1
25°C
75°C
125°C
150°C
-0.01
-0.1
-1
-0.5
V
DS
=
−10
V
I
D
=
−1
mA
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
0.1
V
DS
=
−10
V
Pulsed
-10
-100
0.01
-0.001
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
40
30
20
10
0
0
-5
-10
-15
V
GS
- Gate to Source Voltage - V
60
Pulsed
50
40
30
20
V
GS
=
−2.5
V
10
0
-0.1
−4.5
V
I
D
=
−10
A
Pulsed
-1
-10
-100
I
D
- Drain Current - A
4
Data Sheet D18719EJ2V0DS
2SJ687
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
15
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
V
GS
=
−2.5
V
C
iss
C
oss
1000
10
−4.5
V
5
I
D
=
−10
A
Pulsed
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
SWITCHING CHARACTERISTICS
1000
t
d(off)
t
f
100
t
r
C
rss
V
GS
= 0 V
f = 1 MHz
100
-0.01
-0.1
-1
-10
-100
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-25
-5
-4
-3
-2
-1
I
D
=
−20
A
0
0
0
10
20
30
40
50
60
V
DS
- Drain to Source Voltage - V
-20
-15
-10
-5
V
GS
10
-0.1
V
DD
=
−10
V
V
GS
=
−4.5
V
R
G
= 3
Ω
-1
t
d(on)
V
DS
-10
-100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
10000
−4.5
V
−2.5
V
-1
V
GS
= 0 V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
-10
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
1000
100
di/dt =
−100
A/μs
V
GS
= 0 V
10
-0.1
-1
-10
-100
-0.1
Pulsed
-0.01
0
-0.5
-1
-1.5
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D18719EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
=
−16
V
−10
V
−4
V
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