74AUP1G132
Low-power 2-input NAND Schmitt trigger
Rev. 01 — 20 October 2006
Product data sheet
1. General description
The 74AUP1G132 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G132 provides the single 2-input NAND Schmitt trigger function which accept
standard input signals. They are capable of transforming slowly changing input signals
into sharply defined, jitter-free output signals.
The inputs switch at different points for positive and negative-going signals. The difference
between the positive voltage V
T+
and the negative voltage V
T−
is defined as the input
hysteresis voltage V
H
.
2. Features
I
Wide supply voltage range from 0.8 V to 3.6 V
I
High noise immunity
I
ESD protection:
N
HBM JESD22-A114-D Class 3A. Exceeds 5000 V
N
MM JESD22-A115-A exceeds 200 V
N
CDM JESD22-C101-C exceeds 1000 V
I
Low static power consumption; I
CC
= 0.9
µA
(maximum)
I
Latch-up performance exceeds 100 mA per JESD 78 Class II
I
Inputs accept voltages up to 3.6 V
I
Low noise overshoot and undershoot < 10 % of V
CC
I
I
OFF
circuitry provides partial Power-down mode operation
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
3. Applications
I
Wave and pulse shaper
I
Astable multivibrator
I
Monostable multivibrator.
NXP Semiconductors
74AUP1G132
Low-power 2-input NAND Schmitt trigger
4. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74AUP1G132GW
74AUP1G132GM
74AUP1G132GF
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
TSSOP5
XSON6
XSON6
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
Version
SOT353-1
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
5. Marking
Table 2.
Marking
Marking code
aE
aE
aE
Type number
74AUP1G132GW
74AUP1G132GM
74AUP1G132GF
6. Functional diagram
1
2
B
A
1
Y
4
2
A
&
4
Y
B
001aac532
mna097
mna098
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
7. Pinning information
7.1 Pinning
74AUP1G132
74AUP1G132
B
A
1
2
GND
GND
3
001aac531
B
5
V
CC
1
6
V
CC
B
A
74AUP1G132
1
2
3
6
5
4
V
CC
n.c.
Y
A
2
5
n.c.
3
4
Y
GND
4
Y
001aac530
001aaf508
Transparent top view
Transparent top view
Fig 4. Pin configuration SOT353-1
(TSSOP5)
74AUP1G132_1
Fig 5. Pin configuration SOT886
(XSON6)
Fig 6. Pin configuration SOT891
(XSON6)
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 October 2006
2 of 18
NXP Semiconductors
74AUP1G132
Low-power 2-input NAND Schmitt trigger
7.2 Pin description
Table 3.
Symbol
B
A
GND
Y
n.c.
V
CC
Pin description
Pin
TSSOP5
1
2
3
4
-
5
XSON6
1
2
3
4
5
6
data input B
data input A
ground (0 V)
data output Y
not connected
supply voltage
Description
8. Functional description
Table 4.
Input
A
L
L
H
H
[1]
Function table
[1]
Output
B
L
H
L
H
Y
H
H
H
L
H = HIGH voltage level; L = LOW voltage level.
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
-
−0.5
-
[1]
Max
+4.6
−50
+4.6
−50
+4.6
±20
50
−50
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
°C
mW
V
O
< 0 V
Active mode and Power-down mode
V
O
= 0 V to V
CC
−0.5
-
-
-
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
°C
the value of P
tot
derates linearly with 2.4 mW/K.
74AUP1G132_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 October 2006
3 of 18
NXP Semiconductors
74AUP1G132
Low-power 2-input NAND Schmitt trigger
10. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
−40
Max
3.6
3.6
V
CC
3.6
+125
Unit
V
V
V
V
°C
11. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OFF
∆I
OFF
I
CC
∆I
CC
C
I
C
O
74AUP1G132_1
Conditions
Min
Typ
Max
Unit
V
CC
−
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
[1]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.1
1.7
-
-
-
-
-
-
-
-
0.1
0.3
×
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
0.5
40
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
pF
pF
0.75
×
V
CC
-
input leakage current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
input capacitance
output capacitance
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
−
0.6 V; I
O
= 0 A;
V
CC
= 3.3 V
V
I
= GND or V
CC
; V
CC
= 0 V to 3.6 V
V
O
= GND; V
CC
= 0 V
-
-
-
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 October 2006
4 of 18
NXP Semiconductors
74AUP1G132
Low-power 2-input NAND Schmitt trigger
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
−40 °C
to +85
°C
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OFF
∆I
OFF
I
CC
∆I
CC
input leakage current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
−
0.6 V; I
O
= 0 A;
V
CC
= 3.3 V
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
CC
−
0.11 -
0.6
×
V
CC
0.93
1.17
1.77
1.67
2.40
2.30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
[1]
Conditions
Min
Typ
Max
Unit
V
CC
−
0.1
0.7
×
V
CC
1.03
1.30
1.97
1.85
2.67
2.55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.3
×
V
CC
0.37
0.35
0.33
0.45
0.33
0.45
±0.5
±0.5
±0.6
0.9
50
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
T
amb
=
−40 °C
to +125
°C
V
OH
HIGH-level output voltage
74AUP1G132_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 October 2006
5 of 18
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
