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IDT71V2558SA166BQI: 产品描述ZBT SRAM, 256KX18, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165; 产品类别存储; 文件大小1008KB，共28页; 制造商IDT (Integrated Device Technology)

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IDT71V2558SA166BQI概述

ZBT SRAM, 256KX18, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165

IDT71V2558SA166BQI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	13 X 15 MM, FBGA-165
针数	165
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.A
最长访问时间	3.5 ns
其他特性	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	166 MHz
I/O 类型	COMMON
JESD-30 代码	R-PBGA-B165
JESD-609代码	e0
长度	15 mm
内存密度	4718592 bit
内存集成电路类型	ZBT SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端子数量	165
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	256KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TBGA
封装等效代码	BGA165,11X15,40
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	2.5,3.3 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.045 A
最小待机电流	3.14 V
最大压摆率	0.36 mA
最大供电电压 (Vsup)	3.465 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)
端子形式	BALL
端子节距	1 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	20
宽度	13 mm
Base Number Matches	1

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128K x 36, 256K x 18

3.3V Synchronous ZBT™ SRAMs

2.5V I/O, Burst Counter

Pipelined Outputs

IDT71V2556S

IDT71V2558S

IDT71V2556SA

IDT71V2558SA

Features

128K x 36, 256K x 18 memory configurations

Supports high performance system speed - 200 MHz

(3.2 ns Clock-to-Data Access)

ZBT

Feature - No dead cycles between write and read

cycles

Internally synchronized output buffer enable eliminates the

need to control

Single R/W (READ/WRITE) control pin

Positive clock-edge triggered address, data, and control

signal registers for fully pipelined applications

4-word burst capability (interleaved or linear)

Individual byte write (BW

) control (May tie active)

Three chip enables for simple depth expansion

3.3V power supply (±5%), 2.5V I/O Supply (V

DDQ)

Optional - Boundary Scan JTAG Interface (IEEE 1149.1

complaint)

Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch

ball grid array (fBGA)

Description

The IDT71V2556/58 are 3.3V high-speed 4,718,592-bit (4.5 Mega-

bit) synchronous SRAMS. They are designed to eliminate dead bus cycles

when turning the bus around between reads and writes, or writes and

reads. Thus, they have been given the name ZBT

, or Zero Bus

Turnaround.

Address and control signals are applied to the SRAM during one clock

cycle, and two cycles later the associated data cycle occurs, be it read

or write.

The IDT71V2556/58 contain data I/O, address and control signal

registers. Output enable is the only asynchronous signal and can be used

to disable the outputs at any given time.

A Clock Enable (CEN) pin allows operation of the IDT71V2556/58 to

be suspended as long as necessary. All synchronous inputs are ignored

when (CEN) is high and the internal device registers will hold their previous

values.

There are three chip enable pins (CE

, CE

) that allow the user

to deselect the device when desired. If any one of these three are not

asserted when ADV/LD is low, no new memory operation can be initiated.

However, any pending data transfers (reads or writes) will be completed.

The data bus will tri-state two cycles after chip is deselected or a write is

initiated.

The IDT71V2556/58 has an on-chip burst counter. In the burst mode,

the IDT71V2556/58 can provide four cycles of data for a single address

presented to the SRAM. The order of the burst sequence is defined by the

LBO

input pin. The

LBO

pin selects between linear and interleaved burst

sequence. The ADV/LD signal is used to load a new external address

(ADV/LD = LOW) or increment the internal burst counter (ADV/LD =

HIGH).

The IDT71V2556/58 SRAMs utilize IDT's latest high-performance

CMOS process and are packaged in a JEDEC standard 14mm x 20mm

100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array

(BGA) and a 165 fine pitch ball grid array (fBGA).

Pin Description Summary

-A

Address Inputs

Chip Enables

Output Enable

Read/Write Signal

Clock Enable

Individual Byte Write Selects

Clock

Advance burst address / Load new address

Linear / Interleaved Burst Order

Test Mode Select

Test Data Input

Test Clock

Test Data Output

JTAG Reset (Optional)

Sleep Mode

Data Input / Output

Core Power, I/O Power

Ground

Input

Output

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Static

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

Static

, CE

CEN

CLK

ADV/

LBO

TMS

TDI

TCK

TDO

TRST

I/O

-I/O

, I/O

-I/O

, V

DDQ

OCTOBER 2004

DSC-4875/08

4875 tbl 01

IDT71V2558SA166BQI相似产品对比

	IDT71V2558SA166BQI	IDT71V2558SA100BGI	IDT71V2558SA200BQ	IDT71V2558SA100BQ	IDT71V2558SA100BQI	IDT71V2556SA166BGI	IDT71V2558SA166BQ	IDT71V2558SA133BQ	IDT71V2558S166BQ	IDT71V2556SA166BQI
描述	ZBT SRAM, 256KX18, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	ZBT SRAM, 256KX18, 5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119	ZBT SRAM, 256KX18, 3.2ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	ZBT SRAM, 256KX18, 5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	ZBT SRAM, 256KX18, 5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	ZBT SRAM, 128KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119	ZBT SRAM, 256KX18, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	ZBT SRAM, 256KX18, 4.2ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	ZBT SRAM, 256KX18, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165	ZBT SRAM, 128KX36, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	13 X 15 MM, FBGA-165	14 X 22 MM, PLASTIC, MS-028AA, BGA-119	13 X 15 MM, FBGA-165	13 X 15 MM, FBGA-165	13 X 15 MM, FBGA-165	BGA, BGA119,7X17,50	13 X 15 MM, FBGA-165	13 X 15 MM, FBGA-165	13 X 15 MM, FBGA-165	13 X 15 MM, FBGA-165
针数	165	119	165	165	165	119	165	165	165	165
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	3.5 ns	5 ns	3.2 ns	5 ns	5 ns	3.5 ns	3.5 ns	4.2 ns	3.5 ns	3.5 ns
其他特性	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	166 MHz	100 MHz	200 MHz	100 MHz	100 MHz	166 MHz	166 MHz	133 MHz	166 MHz	166 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B165	R-PBGA-B119	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B119	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	15 mm	22 mm	15 mm	15 mm	15 mm	22 mm	15 mm	15 mm	15 mm	15 mm
内存密度	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit
内存集成电路类型	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
内存宽度	18	18	18	18	18	36	18	18	18	36
湿度敏感等级	3	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	165	119	165	165	165	119	165	165	165	165
字数	262144 words	262144 words	262144 words	262144 words	262144 words	131072 words	262144 words	262144 words	262144 words	131072 words
字数代码	256000	256000	256000	256000	256000	128000	256000	256000	256000	128000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	70 °C	85 °C	85 °C	70 °C	70 °C	70 °C	85 °C
组织	256KX18	256KX18	256KX18	256KX18	256KX18	128KX36	256KX18	256KX18	256KX18	128KX36
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TBGA	BGA	TBGA	TBGA	TBGA	BGA	TBGA	TBGA	TBGA	TBGA
封装等效代码	BGA165,11X15,40	BGA119,7X17,50	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40	BGA119,7X17,50	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	225	225	225	225	225	225	225
电源	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	2.36 mm	1.2 mm	1.2 mm	1.2 mm	2.36 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大待机电流	0.045 A	0.045 A	0.04 A	0.04 A	0.045 A	0.045 A	0.04 A	0.04 A	0.04 A	0.045 A
最小待机电流	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
最大压摆率	0.36 mA	0.26 mA	0.4 mA	0.25 mA	0.26 mA	0.36 mA	0.35 mA	0.3 mA	0.35 mA	0.36 mA
最大供电电压 (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
最小供电电压 (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1 mm	1.27 mm	1 mm	1 mm	1 mm	1.27 mm	1 mm	1 mm	1 mm	1 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	20	20	20	20	20	20	20	20	20	20
宽度	13 mm	14 mm	13 mm	13 mm	13 mm	14 mm	13 mm	13 mm	13 mm	13 mm
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	-
Base Number Matches	1	1	1	1	1	1	1	1	1	-

IDT71V2558SA166BQI

IDT71V2558SA166BQI概述

IDT71V2558SA166BQI规格参数

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IDT71V2558SA166BQI相似产品对比

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