DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4070
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics,
and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
•
Low on-state resistance
R
DS(on)
= 11
Ω
MAX. (V
GS
= 10 V, I
D
= 0.5 A)
•
Low gate charge
Q
G
= 5 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 1.0 A)
•
Gate voltage rating :
±30
V
•
Avalanche capability ratings
<R>
ORDERING INFORMATION
PART NUMBER
2SK4070-S15-AY
Note
Note
Note
Note
LEAD PLATING
PACKING
Tube 70 p/tube
PACKAGE
TO-251 (MP-3-a) typ. 0.39 g
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
2SK4070(1)-S27-AY
2SK4070-ZK-E1-AY
2SK4070-ZK-E2-AY
Pure Sn (Tin)
Tube 75 p/tube
Tape 2500 p/reel
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
(TO-251)
600
±30
±1.0
±4.0
22
1.0
150
−55
to
+150
0.8
38.4
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
P
T2
T
ch
T
stg
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18573EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK4070
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 0.5 A
V
GS
= 10 V, I
D
= 0.5 A
V
DS
= 10 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 150 V, I
D
= 0.5 A,
V
GS
= 10 V,
R
G
= 10
Ω
MIN.
TYP.
MAX.
100
±100
UNIT
μ
A
nA
V
S
2.5
0.2
2.9
0.4
9.2
110
50
11
7.5
6
11
18
3.5
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
11
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 450 V,
V
GS
= 10 V,
I
D
= 1.0 A
I
F
= 1.0 A, V
GS
= 0 V
I
F
= 1.0 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
5
1
2.8
0.86
135
285
1.5
V
F(S-D)
t
rr
Q
rr
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
R
G
Wave Form
50
Ω
0
10%
V
GS
90%
V
DD
V
DS
90%
90%
10%
10%
I
AS
I
D
V
DD
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D18785EJ2V0DS
2SK4070
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
<R>
25
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
dT - Percentage of Rated Power - %
100
80
60
40
20
0
P
T
- Total Power Dissipation - W
20
15
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
ch
- Channel Temperature -
°C
T
C
- Case Temperature -
°C
<R>
100
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. CASE TEMPERATURE
1.2
TC = 25°C, Single
1
I
D
- Drain Current - A
I
D(pulse)
I
D(DC)
1
i
I
D
- Drain Current - A
10
10 ms
PW
=1
i
0.8
0.6
0.4
0.2
0
00
1
μ
s
Po
w
m
i
s
er
D
i ss
0.1
ip
R
DS(on)
Limited
(V
GS
= 10 V)
at
io
nL
im
it e
d
0.01
1
10
100
1000
V
DS
- Drain to Source Voltage - V
0
25
50
75
100
125
150
T
C
- Case Temperature -
°C
<R>
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 125
°C/Wi
10
R
th(ch-C)
= 5.68
°C/Wi
1
0.1
Single pulse
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18785EJ2V0DS
3
2SK4070
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
2
1.8
I
D
- Drain Current - A
10
V
DS
= 10 V
Pulsed
V
GS
= 20 V
I
D
- Drain Current - A
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
V
DS
- Drain to Source Voltage - V
1
T
ch
=
−55°C
−25°C
25°C
75°C
125°C
150°C
0
2
4
6
8
10
12
14
10 V
0.1
Pulsed
0.01
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
5
V
GS(off)
- Gate Cut-off Voltage - V
10
V
DS
= 10 V
Pulsed
1
T
ch
=
−55°C
−25°C
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
0.1
25°C
75°C
125°C
150°C
V
DS
= 10 V
I
D
= 1 mA
0.01
0.01
0.1
1
10
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
18
16
14
12
10
8
6
0
5
10
15
20
V
GS
– Gate to Source Voltage - V
14
Pulsed
12
10
V
GS
= 10 V
8
20 V
Pulsed
6
0.01
0.1
1
10
I
D
= 1.0 A
0.5 A
I
D
- Drain Current - A
4
Data Sheet D18785EJ2V0DS
2SK4070
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
C
iss
, C
oss
, C
rss
- Capacitance - pF
25
20
I
D
= 1.0 A
15
10
5
0
-50
0
50
100
150
C
iss
100
C
oss
10
V
GS
= 0 V
f = 1 MHz
1
0.1
1
10
100
C
rss
0.5 A
V
GS
= 10 V
Pulsed
T
ch
- Channel Temperature -
°C
V
DS
- Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
10
8
V
GS
7
6
300
200
V
DS
100
I
D
= 1.0 A
0
0
1
2
3
4
5
6
5
4
3
2
1
0
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
– Drain to Source Voltage - V
500
400
t
f
100
t
d(off)
10
t
d(on)
t
r
1
0.1
1
10
I
D
- Drain Current - A
Q
G
– Gate Chage - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
– Reverse Recovery Time - ns
I
F
– Diode Forward Current - A
10
1
V
GS
= 10 V
0.1
0V
Pulsed
0.01
0
0.2
0.4
0.6
0.8
1
1.2
100
di/dt = 100 A/μs
V
GS
= 0 V
10
0.1
1
10
100
V
F(S-D)
– Source to Drain Voltage - V
I
F
– Diode Forward Current - A
Data Sheet D18785EJ2V0DS
5
V
GS
– Gate to Source Voltage - V
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
Ω
V
DD
= 450 V
250 V
150 V
9
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