DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
•
Low on-state resistance
R
DS(on)
= 4.4
Ω
MAX. (V
GS
= 10 V, I
D
= 1.0 A)
•
Low gate charge
Q
G
= 7.9 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
•
Gate voltage rating :
±30
V
•
Avalanche capability ratings
<R>
ORDERING INFORMATION
PART NUMBER
2SK3113B-S15-AY
Note
Note
Note
Note
LEAD PLATING
PACKING
Tube 70 p/tube
PACKAGE
TO-251 (MP-3-a) typ. 0.39 g
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
2SK3113B(1)-S27-AY
2SK3113B-ZK-E1-AY
2SK3113B-ZK-E2-AY
Pure Sn (Tin)
Tube 75 p/tube
Tape 2500 p/reel
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
(TO-251)
600
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
±30
±2.0
±8.0
20
1.0
150
–55 to +150
2.0
2.7
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
P
T2
T
ch
T
stg
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18061EJ3V0DS00 (3rd edition)
Date Published June 2007 NS
Printed in Japan
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK3113B
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 600 V, V
GS
= 0 V
V
GS
= ±30 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 1.0 A
V
GS
= 10 V, I
D
= 1.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 150 V, I
D
= 1.0 A
V
GS
= 10 V
R
G
= 10
Ω
R
L
= 10
Ω
V
DD
= 450 V
V
GS
= 10 V
I
D
= 2.0 A
I
F
= 2.0 A, V
GS
= 0 V
I
F
= 2.0 A, V
GS
= 0 V
di/dt = 50 A/
μ
s
MIN.
TYP.
MAX.
100
±10
UNIT
μ
A
μ
A
V
S
2.5
0.5
0.9
3.2
290
75
7
10.5
4.8
15.8
10.5
7.9
2.7
3.2
0.8
190
500
3.5
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
4.4
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
V
F(S-D)
t
rr
Q
rr
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
I
D
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
I
D
90%
90%
I
AS
I
D
V
DD
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D18061EJ3V0DS
2SK3113B
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
100
40
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
35
30
25
20
15
10
5
0
0
20
40
60
80 100 120 140 160
T
C
- Case Temperature -
°C
80
60
40
20
0
0
20
40 60
80 100 120 140 160
T
ch
- Channel Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
Tc = 25°C, Single pulse
I
D(pulse)
PW = 10
μs
100
μs
I
D
- Drain Current - A
10
I
D(DC)
1 ms
1
R
DS(on)
Limited
(at V
GS
= 10 V)
Power Dissipation Limited
10 ms
0.1
0.01
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 125°C/W
100
R
th(ch-C)
= 6.25°C/W
10
1
0.1
Single pulse
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width – s
Data Sheet D18061EJ3V0DS
3
2SK3113B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
5
4.5
Pulsed
V
GS
= 10 V
4
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
8V
FORWARD TRANSFER CHARACTERISTICS
100
I
D
- Drain Current - A
I
D
- Drain Current - A
10
1
T
ch
= 125°C
75°C
25°C
−25°C
V
DS
= 10 V
Pulsed
20
25
30
0.1
0.01
0
5
10
15
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
V
DS
= 10 V
Pulsed
1
T
ch
=
−
25°C
25°C
V
GS(off)
- Gate Cut-off Voltage - V
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
125°C
0.1
75°C
0.01
0.01
0.1
1
10
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance -
Ω
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0.01
0.1
1
10
20 V
Pulsed
V
GS
= 10 V
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0
5
10
15
I
D
= 2.0 A
1.0 A
20
25
V
GS
– Gate to Source Voltage - V
I
D
- Drain Current - A
4
Data Sheet D18061EJ3V0DS
2SK3113B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
10
8
I
D
= 2.0 A
6
1.0 A
4
2
0
-50
0
50
100
150
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
I
F
– Diode Forward Current - A
10
1
V
GS
= 10 V
0.1
0V
Pulsed
0.01
0.0
0.5
1.0
V
GS
= 10 V
Pulsed
T
ch
- Channel Temperature - °C
V
F(S-D)
– Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
1000
SWITCHING CHARACTERISTICS
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
100
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
Ω
t
f
C
oss
100
t
d(off)
10
t
d(on)
t
r
1
0.1
1
10
10
C
rss
V
GS
= 0 V
f = 1 MHz
1
0.1
1
10
100
V
DS
- Drain to Source Voltage – V
I
D
- Drain Current - A
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
10
8
V
GS
7
6
300
200
100
I
D
= 2.0 A
0
0
2
4
6
8
10
V
DS
5
4
3
2
1
0
V
DS
– Drain to Source Voltage - V
trr – Reverse Recovery Time - ns
500
400
100
10
0.1
1
10
I
D
- Drain Current - A
Q
G
– Gate Chage - nC
Data Sheet D18061EJ3V0DS
5
V
GS
– Gate to Source Voltage - V
di/dt = 50 A/μs
V
GS
= 0 V
V
DD
= 450 V
300 V
150 V
9
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