2SK3649-01MR
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation Voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
V
iso
Ratings
150
120
±33
±132
±30
33
169
20
5
2.16
53
+150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*6
<
*1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch=150°C
<
<
*3 I
F
<
D
, -di/dt=50A/µs, Vcc=BV
DSS
, Tch=150°C *4 V
DS
<150V *5 V
GS
=-30V *6 t=60sec, f=60Hz
=-I
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=150V V
GS
=0V
T
ch
=25°C
T
ch
=125°C
V
DS
=120V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=11.5A V
GS
=10V
I
D
=11.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=11.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=48V
I
D
=23A
V
GS
=10V
L=228µH T
ch
=25°C
I
F
=23A V
GS
=0V T
ch
=25°C
I
F
=23A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
150
3.0
Typ.
Max.
5.0
25
250
100
70
1730
300
26
20
23
51
23
51
13.5
19
1.65
Units
V
V
µA
nA
mΩ
S
pF
8
10
54
16
1150
200
17
13
15
34
15
34
9
12.5
33
1.10
130
0.6
ns
nC
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
2.36
58.0
Units
°C/W
°C/W
1
2SK3649-01MR
Characteristics
FUJI POWER MOSFET
60
55
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
50
ID=f(VDS):80µs Pulse test,Tch=25°C
20V
10V
8V
7.5V
50
45
40
40
7.0V
PD [W]
30
25
20
ID [A]
35
30
6.5V
20
6.0V
15
10
10
5
0
0
25
50
75
100
125
150
VGS=5.5V
0
0
1
2
3
4
5
6
Tc [
°
C]
VDS [V]
Typical Transfer Characteristic
100
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
10
10
ID[A]
1
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
0.1
gfs [S]
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.30
VGS=
5.5V
6.0V
6.5V
7.0V
7.5V
200
180
160
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=11.5A,VGS=10V
0.25
0.20
RDS(on) [ m
Ω
]
RDS(on) [
Ω
]
140
120
100
80
typ.
max.
0.15
0.10
8V
10V
60
40
0.05
20V
20
0.00
0
5
10
15
20
25
30
35
40
45
50
0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3649-01MR
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
14
12
max.
Typical Gate Charge Characteristics
VGS=f(Qg):ID=23A, Tch=25°C
Vcc= 36V
48V
5.0
VGS(th) [V]
4.5
10
72V
VGS [V]
75
100
125
150
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
min.
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
Tch [
°
C]
Qg [C]
10n
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
Ciss
1n
10
C [F]
Coss
IF [A]
1
2
100p
Crss
10p
-1
10
10
0
10
1
10
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
10
3
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
500
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=48V
I
AS
=14A
400
10
2
td(off)
300
I
AS
=20A
tf
td(on)
1
E
AS
[mJ]
t [ns]
200
I
AS
=33A
10
tr
100
10
0
0
-1
10
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3649-01MR
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=48V
Avalanche Current I
AV
[A]
Single Pulse
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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