Freescale Semiconductor
Technical Data
Document Number: MRF6S27015N
Rev. 1, 6/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
160 mA, P
out
= 3 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — - 45 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF6S27015NR1
MRF6S27015GNR1
2300 - 2700 MHz, 3 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S27015NR1
CASE 1265A - 02, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MRF6S27015GNR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +175
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 7.5 W Avg., Two - Tone
Case Temperature 79°C, 3 W CW
Symbol
R
θJC
Value
(2,3)
2.0
2.2
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006-2007. All rights reserved.
MRF6S27015NR1 MRF6S27015GNR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 40
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 160 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 160 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 0.4 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
11.6
22.9
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.5
—
2.2
—
2.2
2.8
3.1
0.27
3.5
—
4.4
0.4
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
500
μAdc
μAdc
nAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 160 mA, P
out
= 3 W Avg., f = 2600 MHz, Single - Carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
ACPR
IRL
12.5
19
—
—
14
22
- 45
- 18
16
—
- 42
-9
dB
%
dBc
dB
1. V
GG
= 11/10 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally input matched.
MRF6S27015NR1 MRF6S27015GNR1
2
RF Device Data
Freescale Semiconductor
R1
V
BIAS
+
C11
R2
C1
C2
Z7
Z18
RF
INPUT
R3
Z1
C3
Z2
Z3
Z4
Z5
Z6
DUT
Z19
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
C6
Z17
C4
C7
C8
RF
OUTPUT
V
SUPPLY
V
SUPPLY
C5
C9
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.503″
0.905″
0.371″
0.041″
0.245″
0.248″
0.973″
0.085″
0.091″
0.138″
x 0.066″
x 0.066″
x 0.300″
x 0.016″
x 0.851″
x 0.851″
x 0.050″
x 0.485″
x 0.667″
x 0.816″
Microstrip
Microstrip
x 0.049″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.143″ x 0.816″ Microstrip
0.101″ x 0.667″ Microstrip
0.073″ x 0.485″ Microstrip
0.120″ x 0.021″ Microstrip
0.407″ x 0.170″ Microstrip
0.714″ x 0.066″ Microstrip
0.496″ x 0.066″ Microstrip
0.475″ x 0.050″ Microstrip
0.480″ x 0.050″ Microstrip
Taconic RF - 35, 0.030″,
ε
r
= 3.5
Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic
Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and Values
Part
C1
C2
C3
C4, C5, C6
C7, C8, C9, C10
C11
R1
R2
R3
Description
100 nF Chip Capacitor
4.7 pF Chip Capacitor
9.1 pF Chip Capacitor
8.2 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
10
μF,
35 V Tantalum Chip Capacitor
1 KΩ, 1/4 W Chip Resistor
10 KΩ,1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
CDR33BX104AKYS
ATC100B4R7BT500XT
ATC100B9R1BT500XT
ATC100B8R2BT500XT
GRM55DR61H106KA88L
T491D106K035AS
CRCW12061001FKTA
CRCW12061002FKTA
CRCW120610R0FKTA
Manufacturer
Kemet
ATC
ATC
ATC
Murata
Kemet
Vishay
Vishay
Vishay
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
3
C11
R2
R1
C1
C2
C4
C7
C8
R3
C3
CUT OUT AREA
C6
C9
C5
MRF6S27015N Rev. 3
C10
Figure 2. MRF6S27015NR1(GNR1) Test Circuit Component Layout
MRF6S27015NR1 MRF6S27015GNR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
15
14
G
ps
, POWER GAIN (dB)
13
12
11
10
9
ALT1
ACPR
G
ps
η
D
IRL
24
23
22
21
V
DD
= 28 Vdc, P
out
= 3 W (Avg.)
I
DQ
= 160 mA, Single−Carrier W−CDMA
20
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−30
−40
−50
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−5
−10
−15
−20
−25
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−5
−10
−15
−20
−25
240 mA
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
8
−60
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ P
out
= 3 Watts Avg.
15
14
13
G
ps
, POWER GAIN (dB)
12
11
10
9
8
IRL
ACPR
ALT1
η
D
V
DD
= 28 Vdc, P
out
= 6 W (Avg.)
I
DQ
= 160 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
G
ps
32
31
30
29
28
−30
−40
−50
7
−60
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ P
out
= 6 Watts Avg.
16
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 240 mA
190 mA
G
ps
, POWER GAIN (dB)
15
160 mA
14
130 mA
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
130 mA
160 mA
190 mA
I
DQ
= 80 mA
V
DD
= 28 Vdc
f1 = 2595 MHz, f2 = 2605 MHz
Two −Tone Measurements
13
80 mA
V
DD
= 28 Vdc
f1 = 2592 MHz, f2 = 2605 MHz
Two −Tone Measurements
1
10
P
out
, OUTPUT POWER (WATTS) PEP
12
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
5
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