OM11N60SA
OM11N55SA
POWER MOSFET IN HERMETIC ISOLATED
TO-254AA PACKAGE
600V & 550V, 11 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S
Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. The device breakdown ratings provide a substantial
voltage margin for stringent applications such as 270 VDC aircraft power and/or
rectified 230 VAC power (line operation). They are ideally suited for Military
requirements where small size, high performance and high reliability are required,
and in applications such as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM11N60
OM11N55
V
DS
600V
550V
R
DS(on)
.50
.44
I
D(MAX)
11A
11A
3.1
SCHEMATIC
DRAIN
GATE
SOURCE
4 11 R1
Supersedes 2 04 R0
3.1 - 19
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM11N55SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
DSS
Current
T
C
= 125° C
I
D(on)
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
T
C
= 125 C
.88
V
GS
= 10 V, I
D
= 5.5 A,
.37
.44
V
GS
= 10 V, I
D
= 5.5 A
3.3
V
V
GS
= 10 V, I
D
= 5.5 A
On-State Drain Current
1
11.0
A
V
DS
> I
D(on)
x R
DS(on)
, V
GS
= 10 V
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Gate-Body Leakage Forward
±100
nA
V
GS
= ± 20 V
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
mA
I
D
= 250
mA
550
V
V
GS
= 0,
Min. Typ. Max. Units Test Conditions
STATIC P/N OM11N60SA
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 10 V, I
D
= 5.5 A,
T
C
= 125 C
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
600
V
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
I
GSS
Gate-Body Leakage
± 100
nA
OM11N60SA - OM11N55SA
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
Current
0.2
1.0
mA
I
D(on)
On-State Drain
Current
1
11.0
A
V
DS(on)
Static Drain-Source On-State
3.1
V
Voltage
1
R
DS(on)
Static Drain-Source On-State
.47
.50
Resistance
1
R
DS(on)
Static Drain-Source On-State
1.0
Resistance
1
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Fall Time
135
Turn-Off Delay Time
225
Rise Time
75
Turn-On Delay Time
55
ns
ns
ns
ns
Reverse Transfer Capacitance
220
pF
Output Capacitance
440
pF
Input Capacitance
3000
pF
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
Forward Transductance
1
5.0
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5
W
, R
L
= 30
W
(MOSFET) switching times are
essentially independent of
operating temperature.
DYNAMIC
S(W
)
V
DS
2 V
DS(on)
, I
D
= 5.5 A
(W )
g
fs
Forward
Transductance
1
5.0
S(W
)
V
DS
2 V
DS(on)
, I
D
= 5.5 A
3.1 - 20
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
C
iss
Input Capacitance
3000
pF
C
oss
Output Capacitance
440
pF
C
rss
Reverse Transfer Capacitance
220
pF
T
d(on)
Turn-On Delay Time
55
ns
t
r
Rise Time
75
ns
T
d(off)
Turn-Off Delay Time
225
ns
t
f
Fall Time
135
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
S
G
I
S
(Body Diode)
I
SM
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
Source
Current
1
Continuous Source Current
- 11
(Body Diode)
I
SM
T
C
= 25 C, I
S
= -11 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
Source
Current
1
- 52
(Body Diode)
V
SD
Diode Forward Voltage
1
- 1.4
t
rr
Reverse Recovery Time
700
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
I
S
Continuous Source Current
- 11
- 52
- 1.4
700
A
A
V
ns
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5
W
, R
L
= 30
W
(MOSFET) switching times are
essentially independent of
operating temperature.
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
A
S
V
T
C
= 25 C, I
S
= -11 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
OM11N60SA - OM11N55SA
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Symbol
V
DGR
V
DS
I
D
I
D
I
DM
P
D
P
D
Parameter
Drain Source Voltage
Drain Gate Voltage (R
GS
= 1.0 M )
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
1
Max. Power Dissipation @ T
C
= 25°C
Max. Power Dissipation @ T
C
= 100°C
Linear Derating Factor Jct. to Case
Linear Derating Factor Jct. to Ambient
T
J
, T
stg
Operating and Storage Temp. Range
Lead Temperature
(1/16" from case for 10 sec.)
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
OM11N60
600
600
11
7.2
52
125
50
1.0
.020
OM11N55
550
550
11
7.2
52
125
50
1.0
.020
Units
V
V
A
A
A
W
W
W/°C
W/°C
°C
°C
-55 to 150
300
300
THERMAL RESISTANCE
(Maximum at T
A
= 25°C)
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient (Free Air Operation)
1.0
50
1.0
50
°C/W
°C/W
3.1
3.1 - 21
OM11N60SA - OM11N55SA
MECHANICAL OUTLINES
.144 DIA.
.545
.535
.050
.040
.685
.665
.800
.790
.550
.530
.550
.510
.045
.035
.150 TYP.
.260
.249
.005
.150 TYP.
TO-254 AA Package
.940
.740
.540
.200
.100
2 PLCS.
.040
.260
MAX
3.1
.290
.125
2 PLCS.
.250
.125 DIA.
2 PLS.
.540
.500
MIN.
.150
.300
.040 DIA.
3 PLCS.
.150
Omnirel AZ Package
For Z-Pack configuration, add letter “Z” to part number,
Example - OMXXXXSAZ
Standard Products are supplied with glass feedthroughs, for ceramic feedthroughs, add letter “C” to part number,
Example - OMXXXXCSA
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ADI 工业技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
