HMC606LC5
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
v00.0407
5
AMPLIFIERS - SMT
Typical Applications
The HMC606LC5 is ideal for:
Features
Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
P1dB Output Power: +15 dBm
Gain: 13.5 dB
Output IP3: +27 dBm
Supply Voltage: +5V @ 64 mA
50 Ohm Matched Input/Output
25mm
2
Leadless SMT Package
• Radar, EW & ECM
• Microwave Radio
• Test Instrumentation
• Military & Space
• Fiber Optic Systems
Functional Diagram
General Description
The HMC606LC5 is a GaAs InGaP HBT MMIC
Distributed Amplifier housed in a leadless 5 x 5 mm
surface mount package which operates between 2 and
18 GHz. With an input signal of 12 GHz, the amplifier
provides ultra low phase noise performance of -160
dBc/Hz at 10 kHz offset, representing a significant
improvement over FET-based distributed amplifiers.
The HMC606LC5 provides 13.5 dB of small signal
gain, +27 dBm output IP3 and +15 dBm of output
power at 1 dB gain compression while requiring 64 mA
from a +5V supply. The HMC606LC5 amplifier I/Os
are internally matched to 50 Ohms and are internally
DC blocked.
Electrical Specifications,
T
A
= +25° C, Vcc1= Vcc2= 5V
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Phase Noise @ 100 Hz
Phase Noise @ 1 kHz
Phase Noise @ 10 kHz
Phase Noise @ 1 MHz
Supply Current
12
10.5
Min.
Typ.
2 - 12
13.5
±1.0
0.021
5
20
15
15
17
27
-140
-150
-160
-170
64
80
10
9.5
Max.
Min.
Typ.
2 - 18
12.5
±1.0
0.024
7
18
15
13
15
22
-140
-150
-160
-170
64
80
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
mA
5 - 628
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC606LC5
v00.0407
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Gain & Return Loss
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
20
18
16
14
GAIN (dB)
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
+25C
+85C
-40C
5
AMPLIFIERS - SMT
Input Return Loss vs. Temperature
0
INPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
+25C
+85C
-40C
Power Compression
20
Pout (dBm), Gain (dB), PAE (%)
Noise Figure vs. Temperature
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
2
4
6
8
10
+25C
+85C
-40C
15
NOISE FIGURE (dB)
Output Power
Gain
PAE
10
5
0
-5
-15
-10
-5
Pin (dBm)
0
5
10
12
14
16
18
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 62
HMC606LC5
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
v00.0407
5
AMPLIFIERS - SMT
P1dB vs. Temperature
20
18
16
14
P1dB (dBm)
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. Temperature
25
23
21
19
Psat (dBm)
17
15
13
11
9
7
5
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
+25C
+85C
-40C
Output IP3 vs. Temperature
35
33
31
29
27
25
23
21
19
17
15
13
11
9
7
5
2
4
6
8
10
Phase Noise @ 12 GHz
0
-20
PHASE NOISE (dBc/Hz)
-40
-60
-80
OIP3 (dBm)
-100
-120
-140
-160
-180
1
10
2
3
4
5
6
+25C
+85C
-40C
12
14
16
18
10
10
10
10
10
FREQUENCY (GHz)
FREQUENCY (Hz)
Phase Noise at P1dB @ 12 GHz
0
-20
PHASE NOISE (dBc/Hz)
Phase Noise at Psat @ 12 GHz
0
-20
PHASE NOISE (dBc/Hz)
-40
-60
-80
-100
-120
-140
-160
-40
-60
-80
-100
-120
-140
-160
-180
1
10
2
3
4
5
6
10
10
10
10
10
-180
1
10
10
2
10
3
10
4
10
5
10
6
FREQUENCY (Hz)
FREQUENCY (Hz)
5 - 630
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC606LC5
v00.0407
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Typical Supply Current vs. Vcc1, Vcc2
Vcc, Vcc2 (V)
+4.5
+5.0
+5.5
Icc + Icc2 (mA)
53
64
71
Absolute Maximum Ratings
Vcc1= Vcc2= 5V
RF Input Power (RFin)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
7V
+15 dBm
175 °C
0.55 W
169.5 °C/W
-65 to +150 °C
-40 to +85 °C
5
AMPLIFIERS - SMT
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 63
HMC606LC5
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
v00.0407
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number
1, 3, 7 - 15, 17
- 19,
23 - 32
Function
Description
No connection. These pins may be connected to RF
ground. Performance will not be affected.
Interface Schematic
N/C
2, 16
Vcc1, Vcc2
Vcc1= Vcc2= 5V.
Power supply voltage for the amplifier.
4, 6, 20, 22,
Ground Paddle
GND
Ground paddle must be connected to RF/DC ground.
5
RFIN
This pin is AC coupled and matched
to 50 Ohms from 2 - 18 GHz.
21
RFOUT
This pin is AC coupled and matched
to 50 Ohms from 2 - 18 GHz.
5 - 632
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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