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UM6610E

产品描述Pin Diode, 1000V V(BR), Silicon,
产品类别二极管    PIN 二极管   
文件大小326KB,共10页
制造商Microsemi
官网地址https://www.microsemi.com
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UM6610E概述

Pin Diode, 1000V V(BR), Silicon,

UM6610E规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
Reach Compliance Codeunknown
ECCN代码EAR99
应用ATTENUATOR; SWITCHING
最小击穿电压1000 V
配置SINGLE
最大二极管电容0.4 pF
标称二极管电容0.4 pF
二极管元件材料SILICON
最大二极管正向电阻2.5 Ω
二极管电阻测试电流100 mA
二极管电阻测试频率100 MHz
二极管类型PIN DIODE
频带ULTRA HIGH FREQUENCY
JESD-30 代码O-XAMW-F2
JESD-609代码e0
少数载流子标称寿命1 µs
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式MICROWAVE
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散2.5 W
认证状态Not Qualified
反向测试电压100 V
表面贴装YES
技术POSITIVE-INTRINSIC-NEGATIVE
端子面层TIN LEAD
端子形式FLAT
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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UM6000 / UM6200/UM6600
POWER PIN DIODES
DESCRIPTION
These series of PIN diodes are designed for
applications requiring small package size
and moderate average power handling
capability. The low capacitance of the
UM6000 and UM6600 allows them to be
used as series switching elements to 1 GHz.
The low resistance of the UM6200 is useful
in applications where forward bias current
must be minimized.
Because of its thick I-region width and long
lifetime the UM6000 and UM6600 have
been used in distortion sensitive and high
peak power applications, including receiver
protectors, TACN, and IFF equipment.
Their low capacitance allows them to be
useful as attenuator diodes at frequencies
greater than 1 GHz. The UM6200 has been
used successfully in switches in which low
insertion loss at low bias current is required.
The “A” style package for this series is the
smallest Microsemi PIN diode package. It has
been used successfully in many microwave
applications using coaxial, microstrip, and
stripline techniques at frequencies beyond X-
Band. The “B” and “E” style leaded packages
offer the highest available power dissipation for a
package this small. They have been used
extensively as series switch elements in
microstrip circuits. The “C” style package
duplicates the physical outline available in
conventional ceramic-metal packages but
incorporates the many reliability advantages of
the Microsemi construction.
KEY FEATURES
WWW .
Microsemi
.C
OM
Voltage ratings to 1000V
Average power dissipation to 6 W
Series resistance as low as 0.4
Carrier lifetime greater than 1.0 µs
Non cavity design
Thermally matched configuration
Low capacitance at 0 V bias
Low conductance at 0 V bias
Compatible with automatic insertion
equipment
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
Condition
UM6000/UM6600
PD
A & C
25
O
C Pin Temperature
6W
θ
25
O
C/W
PD
UM6200
θ
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX6001B, etc.
4 W 37.5
o
C/W
2.0 W 75
o
C/W
0.5 W
3.0 W 42.5
o
C/W
10 kW
B & E
½ in. total length to 25
O
C Contact 2.5 W
60
O
C/W
Free Air
0.5 W
O
SM
25 C End Cap Temperature
4.5 W
27.5
O
C/W
All
1 us pulse (Single)
UM6000 25 kW
UM6600 13 kW
UM6000/UM62000/UM6600
UM6000/UM62000/UM6600
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100
200
400
800
1000
UM6001
UM6002
-
UM6006
UM6010
UM6201
UM6202
UM6204
-
-
UM6601
UM6602
-
UM6606
UM6610
Copyright
2005
Rev. 0, 2006-03-13
Microsemi
Page 1
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