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5.0SMDJ130AV-W

产品描述Trans Voltage Suppressor Diode,
产品类别二极管   
文件大小430KB,共6页
制造商Rectron Semiconductor
官网地址http://www.rectron.com/
标准
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5.0SMDJ130AV-W概述

Trans Voltage Suppressor Diode,

5.0SMDJ130AV-W规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Rectron Semiconductor
Reach Compliance Codecompliant
JESD-609代码e3
峰值回流温度(摄氏度)NOT SPECIFIED
端子面层Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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5.0SMDJ
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
5000 WATT PEAK POWER 8.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
5000 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
P/N suffix V means AEC-Q101 qualified, e.g:5.0SMDJ22AV
P/N suffix V means Halogen-free
0.108 (2.75)
0.123 (3.25)
0.217 ( 5.50)
0.240( 6.10 )
SMC
0.280 ( 7.11 )
0.260 ( 6.60 )
0.012 ( 0.305 )
0.007 ( 0.170 )
0.087 ( 2.2 )
0.106 ( 2.70 )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load,
For capacitive load, derate current by 20%.
o
0.035 ( 0.90)
0.055 ( 1.40 )
0.008 ( 0.203 )MAX
0.291 ( 7.40)
0.331( 8.40 )
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
o
RATINGS
Peak Pulse Power Dissipation with a 10/1000uS
waveform (Note 1 )
Peak Pulse Current with a 10/1000uS waveform (Note 1 )
Power Dissipation On Infinite Heatsink at T
L
= 75 C
Peak Forward Surge Current, 8.3ms single half sine wave-
superimposed on rated load( JEDEC METHOD ) (Note 3)
o
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
I
2
T
V
F
R
θ
JA
R
θ
JL
T
J
, T
STG
o
VALUE
Minimum 5000
23.9
6.5
300
374
3.5/6.5
75
15
-55 to + 150
UNITS
Watts
Amps
Watts
Amps
2
AS
Typical Current Squared Time
Instantaneous Forward Voltage at 100A, (Note 2)
Typical Thermal Resistance
Typical Thermal Resistance
Operating and Storage Temperature Range
Volts
0
C/W
0
C
NOTES : 1. Non-repetitive current pulse, per Fig.5 and derated above T
A
= 25 C per Fig.1.
2. VF<3.5V for devices of VBR<200V and VF<6.5V for devices of VBR>200V .
3. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
2019-01/61
REV: B

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