LF153
LF253 - LF353
WIDE BANDWIDTH
DUAL J-FET OPERATIONAL AMPLIFIERS
s
LOW POWER CONSUMPTION
s
WIDE COMMON-MODE (UP TO V
CC+
) AND
DIFFERENTIAL VOLTAGE RANGE
s
LOW INPUT BIAS AND OFFSET CURRENT
s
OUTPUT SHORT-CIRCUIT PROTECTION
s
HIGH INPUT IMPEDANCE J–FET INPUT
STAGE
N
DIP8
(Plastic Package)
s
INTERNAL FREQUENCY COMPENSATION
s
LATCH UP FREE OPERATION
s
HIGH SLEW RATE : 16V/µs (typ)
D
SO8
(Plastic Micropackage)
DESCRIPTION
ORDER CODE
The LF353 are high speed J–FET input dual oper-
ational amplifiers incorporating well matched, high
voltage J–FET and bipolar transistors in a mono-
lithic integrated circuit.
The devices feature high slew rates, low input bias
and offset currents, and low offset voltage temper-
ature coefficient.
PIN CONNECTIONS
(top view)
1-
2-
3-
4-
5-
6-
7-
8-
Output1
Inverting input 1
Non-inverting input 1
V
CC-
Non-invertig input 2
Inverting input 2
Output 2
V
CC+
Package
Part Number
LF353
LF253
LF153
Temperature Range
N
0°C, +70°C
-40°C, +105°C
-55°C, +125°C
•
•
•
D
•
•
•
N =
Dual in Line Package (DIP)
D =
Small Outline Package (SO) - also available in Tape & Reel (DT)
1
2
3
4
-
+
-
+
8
7
6
5
March 2001
1/9
LF153 - LF253 - LF353
SCHEMATIC DIAGRAM
(each amplifier)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
i
V
id
P
tot
T
oper
T
stg
1.
2.
3.
4.
Parameter
Supply voltage - note
1)
Input Voltage - note
2)
Differential Input Voltage - note
3)
Power Dissipation
Output Short-circuit Duration - note
4)
Operating Free-air Temperature Range
Storage Temperature Range
LF153
LF253
LF353
Unit
V
V
V
mW
±18
±15
±30
680
Infinite
-55 to +125
-40 to +105
-65 to +150
0 to +70
°C
°C
All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference
level is the midpoint between V
CC +
and V
CC -
.
The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less.
Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating
is not exceeded
2/9
LF153 - LF253 - LF353
ELECTRICAL CHARACTERISTICS
V
CC
= ±15V, T
amb
= +25°C (unless otherwise specified)
Symbol
V
io
DV
io
I
io
Parameter
Input Offset Voltage (R
s
=
10kΩ)
T
amb
= +25°C
T
min
≤
T
amb
≤
T
max
Input Offset Voltage Drift
Input Offset Current- note
1)
T
amb
= +25°C
T
min
≤
T
amb
≤
T
max
Input Bias Current -note 1
T
amb
= +25°C
T
min
≤
T
amb
≤
T
max
Large Signal Voltage Gain
(R
L
= 2kΩ, V
o
= ±10V)
T
amb
= +25°C
T
min
≤
T
amb
≤
T
max
Supply Voltage Rejection Ratio (R
S
=
10kΩ)
T
amb
= +25°C
T
min
≤
T
amb
≤
T
max
Supply Current, no load
T
amb
= +25°C
T
min
≤
T
amb
≤
T
max
Input Common Mode Voltage Range
Common Mode Rejection Ratio (R
S
=
10kΩ)
T
amb
= +25°C
T
min
≤
T
amb
≤
T
max
Output Short-circuit Current
T
amb
= +25°C
T
min
≤
T
amb
≤
T
max
Output Voltage Swing
T
amb
= +25°C
±V
opp
T
min
≤
T
amb
≤
T
max
R
L
=
R
L
=
R
L
=
R
L
=
2kΩ
10kΩ
2kΩ
10kΩ
±11
50
25
80
80
Min.
Typ.
3
10
5
100
4
200
20
V/mV
200
dB
86
Max.
10
13
µV/°C
pA
nA
nA
20
Unit
mV
I
ib
A
vd
SVR
I
CC
V
icm
CMR
1.4
+15
-12
86
3.2
3.2
mA
V
dB
70
70
10
10
10
12
10
12
12
mA
40
60
60
V
12
13.5
I
OS
SR
t
r
K
ov
GBP
R
i
Slew Rate
V
i
= 10V, R
L
= 2kΩ, C
L
= 100pF, T
amb
= +25°C, unity gain
Rise Time
V
i
= 20mV, R
L
= 2kΩ, C
L
= 100pF, T
amb
= +25°C, unity gain
Overshoot
V
i
= 20mV, R
L
= 2kΩ, C
L
= 100pF, T
amb
= +25°C, unity gain
Gain Bandwidth Product
f = 100kHz, T
amb
= +25°C,V
in
= 10mV, R
L
= 2kΩ, C
L
= 100pF
Input Resistance
V/µs
16
µs
0.1
%
10
MHz
2.5
4
10
12
0.01
15
45
120
nV
-----------
-
Hz
Degrees
dB
Ω
THD
e
n
Total Harmonic Distortion ( f = 1kHz, A
v
= 20dB
R
L
= 2kΩ, C
L
= 100pF, T
amb
= +25°C,V
o
= 2V
pp
)
Equivalent Input Noise Voltage
R
S
=
100Ω, f = 1KHz
∅m
Phase Margin
V
o1
/V
o2
Channel Separation (Av = 100, T
amb
= +25°C)
1.
The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature.
3/9
LF153 - LF253 - LF353
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus FREQUENCY
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus FREQUENCY
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus FREQUENCY
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus FREE AIR TEMP.
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus LOAD RESISTANCE
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus SUPLY VOLTAGE
4/9
LF153 - LF253 - LF353
INPUT BIAS CURRENT versus FREE AIR
TEMPERATURE
LARGE SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION versus FREE AIR TEMP.
LARGE SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT versus
FREQUENCY
TOTAL POWER DISSIPATION versus FREE AIR
TEMPERATURE
SUPPLY CURRENT PER AMPLIFIER versus
FREE AIR TEMPERATURE
SUPPLY CURRENT PER AMPLIFIER versus
SUPPLY VOLTAGE
5/9
Microchip MCU
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