74V1G70
SINGLE BUFFER
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 3.6ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
POWER DOWN PROTECTION ON INPUT
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 4.5V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
T&R
74V1G70STR
74V1G70CTR
DESCRIPTION
The 74V1G70 is an advanced high-speed CMOS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no regard to
the supply voltage. This device can be used to
interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 2004
1/9
74V1G70
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1
2
4
3
5
SYMBOL
NC
1A
1Y
GND
V
CC
NAME AND FUNCTION
Not Connected
Data Input
Data Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
H
Y
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
±
50
-65 to +150
260
Unit
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
dt/dv
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (note 1) (V
CC
= 3.3
±
0.3V)
(V
CC
= 5.0
±
0.5V)
Parameter
Value
2 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
0 to 100
0 to 20
Unit
V
V
V
°C
ns/V
ns/V
1) V
IN
from 30% to 70% of V
CC
2/9
74V1G70
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
3.0 to
5.5
2.0
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
V
OL
Low Level Output
Voltage
2.0
3.0
4.5
3.0
4.5
I
I
I
CC
Input Leakage
Current
Quiescent Supply
Current
0 to
5.5
5.5
I
O
=-50
µA
I
O
=-50
µA
I
O
=-50
µA
I
O
=-4 mA
I
O
=-8 mA
I
O
=50
µA
I
O
=50
µA
I
O
=50
µA
I
O
=4 mA
I
O
=8 mA
V
I
= 5.5V or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±
0.1
1
2.0
3.0
4.5
1.9
2.9
4.4
2.48
3.8
0.1
0.1
0.1
0.44
0.44
±
1
10
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
1.9
2.9
4.4
2.4
3.7
0.1
0.1
0.1
0.55
0.55
±
1
20
µA
µA
V
V
Max.
-55 to 125°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
V
V
Max.
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
V
IL
V
OH
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
V
CC
(V)
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
(*) Voltage range is 3.3V
±
0.3V
(**) Voltage range is 5.0V
±
0.5V
Value
T
A
= 25°C
Min.
Typ.
4.8
5.3
3.6
4.0
Max.
7.0
8.0
5.5
6.0
-40 to 85°C
Min.
1.0
1.0
1.0
1.0
Max.
8.0
9.0
6.5
7.0
-55 to 125°C
Min.
1.0
1.0
1.0
1.0
Max.
9.0
10.0
7.5
8.0
ns
Unit
C
L
(pF)
15
50
15
50
t
PLH
t
PHL
Propagation Delay
Time
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
T
A
= 25°C
Min.
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
(note 1)
Typ.
4
10
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
3/9
74V1G70
TEST CIRCUIT
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY
(f=1MHz; 50% duty cycle)
4/9
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