Standard SRAM, 4KX4, 45ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20
| 参数名称 | 属性值 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 20 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 45 ns |
| JESD-30 代码 | R-GDIP-T20 |
| JESD-609代码 | e0 |
| 长度 | 25.3365 mm |
| 内存密度 | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端子数量 | 20 |
| 字数 | 4096 words |
| 字数代码 | 4000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 4KX4 |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 7.62 mm |
| Base Number Matches | 1 |
| 5962-8670513RX | 5962-8670502RX | 5962-8670506RX | 5962-8670511RX | |
|---|---|---|---|---|
| 描述 | Standard SRAM, 4KX4, 45ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 | Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 | Standard SRAM, 4KX4, 45ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 | Standard SRAM, 4KX4, 25ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20 |
| 零件包装代码 | DIP | DIP | DIP | DIP |
| 包装说明 | DIP, | DIP, | DIP, | DIP, |
| 针数 | 20 | 20 | 20 | 20 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 45 ns | 25 ns | 45 ns | 25 ns |
| JESD-30 代码 | R-GDIP-T20 | R-GDIP-T20 | R-GDIP-T20 | R-GDIP-T20 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 长度 | 25.3365 mm | 25.3365 mm | 25.3365 mm | 25.3365 mm |
| 内存密度 | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 20 | 20 | 20 |
| 字数 | 4096 words | 4096 words | 4096 words | 4096 words |
| 字数代码 | 4000 | 4000 | 4000 | 4000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 4KX4 | 4KX4 | 4KX4 | 4KX4 |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| Base Number Matches | 1 | 1 | 1 | 1 |
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