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5962-9161709VZC

产品描述Dual-Port SRAM, 8KX16, 30ns, CMOS, 1.150 X 1.150 INCH, MQFP-84
产品类别存储    存储   
文件大小686KB,共27页
制造商e2v technologies
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5962-9161709VZC概述

Dual-Port SRAM, 8KX16, 30ns, CMOS, 1.150 X 1.150 INCH, MQFP-84

5962-9161709VZC规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称e2v technologies
零件包装代码QFP
包装说明QFF,
针数84
Reach Compliance Codeunknown
ECCN代码3A001.A.2.C
最长访问时间30 ns
JESD-30 代码S-XQFP-F84
JESD-609代码e0
长度29.21 mm
内存密度131072 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度16
功能数量1
端子数量84
字数8192 words
字数代码8000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织8KX16
封装主体材料UNSPECIFIED
封装代码QFF
封装形状SQUARE
封装形式FLATPACK
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
筛选级别MIL-PRF-38535 Class V
座面最大高度2.89 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层TIN LEAD
端子形式FLAT
端子节距1.27 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度29.21 mm
Base Number Matches1

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Features
Fast Access Time: 30/45 ns
Wide Temperature Range: -55°C to +125°C
Separate Upper Byte and Lower Byte Control for Multiplexed Bus Compatibility
Expandable Data Bus to 32 bits or More Using Master/Slave Chip Select When Using
More Than One Device
On-chip Arbitration Logic
Versatile Pin Select for Master or Slave:
– M/S = H for Busy Output Flag On Master
– M/S = L for Busy Input Flag On Slave
INT Flag for Port to Port Communication
Full Hardware Support of Semaphore Signaling Between Ports
Fully Asynchronous Operation From Either Port
Battery Back-up Operation: 2V Data Retention
TTL Compatible
Single 5V + 10% Power Supply
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019
Quality grades: QML Q and V with SMD 5962-91617 and ESCC with 9301/050
Rad. Tolerant
High Speed
8 Kb x 16
Dual Port RAM
M67025E
Introduction
The M67025E is a very low power CMOS dual port static RAM organized as 8192 bit
×
16. The product is designed to be used as a stand-alone 16-bit dual port RAM or as
a combination MASTER/SLAVE dual port for 32-bit or more width systems. The Atmel
MASTER/SLAVE dual port approach in memory system applications results in full
speed, error free operation without the need of an additional discrete logic.
Master and slave devices provide two independent ports with separate control,
address and I/O pins that permit independent, asynchronous access for reads and
writes to any location in the memory. An automatic power down feature controlled by
CS permits the on-chip circuitry of each port in order to enter a very low stand by
power mode.
Using an array of eight transistors (8T) memory cell, the M67025E combines an
extremely low standby supply current (typ = 1.0 µA) with a fast access time at 30 ns
over the full temperature range. All versions offer battery backup data retention capa-
bility with a typical power consumption at less than 5 µW.
For military/space applications that demand superior levels of performance and reli-
ability the M67025E is processed according to the methods of the latest revision of the
MIL PRF 38635 (Q and V) and/or ESCC 9000.
4146N–AERO–04/07

5962-9161709VZC相似产品对比

5962-9161709VZC
描述 Dual-Port SRAM, 8KX16, 30ns, CMOS, 1.150 X 1.150 INCH, MQFP-84
是否无铅 含铅
是否Rohs认证 不符合
厂商名称 e2v technologies
零件包装代码 QFP
包装说明 QFF,
针数 84
Reach Compliance Code unknown
ECCN代码 3A001.A.2.C
最长访问时间 30 ns
JESD-30 代码 S-XQFP-F84
JESD-609代码 e0
长度 29.21 mm
内存密度 131072 bit
内存集成电路类型 DUAL-PORT SRAM
内存宽度 16
功能数量 1
端子数量 84
字数 8192 words
字数代码 8000
工作模式 ASYNCHRONOUS
最高工作温度 125 °C
最低工作温度 -55 °C
组织 8KX16
封装主体材料 UNSPECIFIED
封装代码 QFF
封装形状 SQUARE
封装形式 FLATPACK
并行/串行 PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED
认证状态 Not Qualified
筛选级别 MIL-PRF-38535 Class V
座面最大高度 2.89 mm
最大供电电压 (Vsup) 5.5 V
最小供电电压 (Vsup) 4.5 V
标称供电电压 (Vsup) 5 V
表面贴装 YES
技术 CMOS
温度等级 MILITARY
端子面层 TIN LEAD
端子形式 FLAT
端子节距 1.27 mm
端子位置 QUAD
处于峰值回流温度下的最长时间 NOT SPECIFIED
宽度 29.21 mm
Base Number Matches 1

 
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