UM9701
Low Resistance, Low Distortion, RF Switching PIN
Diode
KEY FEATURES
Specified low distortion
Low Forward Resistance
High Reverse Resistance
High Voltage Capability
Good Power Handling
Microsemi Ruggedness and reliability
Compatible with automatic insertion
equipment
DESCRIPTION
WWW .
Microsemi
.C
OM
The UM9701 PIN diode was designed for
low resistance at low forward bias current
and low reverse bias capacitance. This
unique Microsemi design results in both
forward and reverse bias.
These PIN diodes are characterized for
low current drain RF and microwave
switch applications particularly for digital
filter switch designs. The construction
and geometry of these devices provide
good voltage and power handling
capability.
These devices are constructed using a
metallurgical full face bond to both
surfaces of the silicon chip. A glass
enclosure houses this bond in a reliable and
hermetic package. The axial leads are
attached to refractory pins and do not touch
the glass enclosure.
Environmentally these, and all Microsemi
PIN diodes, can withstand thermal cycling
from -195 °C to + 300 °C and exceed all
military environmental specifications for
shock, vibration, acceleration, and moisture
resistance.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPLICATIONS/BENEFITS
Little or no Bias required.
Available in leaded or surface mount
packages.
RoHS compliant packaging available: use
UMX9701B, etc
.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Reverse Voltage
AVERAGE Power Dissipation
Free Air at 25 °C
Average Power Dissipation
½ “ (12.7 mm) Total lead Length
to 25 °C Contacts
Storage Temperature
Operating Temperature
Symbol
V
R
P
A
P
A
T stg
T op
Value
100
500
2.5
Derate linearly
To 175 °C
-65 to 175
-65 to 175
Unit
Volts
mW
Watts
ºC
ºC
UM9701
UM9701
Copyright
2001
Rev. 0.02, 2006-04-27
Microsemi
Page 1
UM9701
Low Resistance, Low Distortion, RF Switching PIN
Diode
WWW .
Microsemi
.C
OM
Electrical Specifications
Test
Series Resistance (MAX)
Total Capacitance (MAX)
Parallel Resistance (MIN)
Carrier Lifetime (MIN)
Reverse Current (MAX)
Forward Voltage (MAX)
Forward Bias Third Order
IM Distortion (MAX)
Reverse Bias Third Order
IM Distortion (MAX)
Symbol
R
S
C
T
R
P
τ
I
R
V
F
R 2ab/a
R 2ab/a
UM9701
0.8
Ω
1.8 pF
100 kΩ
1.5 µs
10 µA
0.8 V
-90 dB
-90 dB
Conditions
F = 100 MHz, I
F
= 10 mA
F = 1 MHz, V
R
= 50 V
F = 100 MHz, V
R
= 50 V
I
F
= 10 mA
V
R
= 100 V
I
F
= 10 mA
I
F
= 10 mA
P
A
= P
B
= +20 dBm
f
A
= 43 MHz, f
B
= 44 MHz
V
R
= 50 V
P
A
= P
B
= +20 dBm
f
A
= 43 MHz, f
B
= 44 MHz
TYPICAL SERIES RESISTANCE VS FORWARD CURRENT
101
Rs SEREIES RESISTANCE (Ohms)
100
F = 100 MHz
ELECTRICAL
ELECTRICAL
10-1
100
101
102
FORWARD CURRENT (mA)
Copyright
2001
Rev. 0.02, 2006-04-27
Microsemi
Page 2
UM9701
Low Resistance, Low Distortion, RF Switching PIN
Diode
WWW .
Microsemi
.C
OM
TYPICAL PARALLEL RESISTANCE VS REVERSE VOLTAGE
10
6
Rp PARALLEL RESISTANCE (Ohms)
F = 10 MHz-----
105
F = 20 MHz--------
----F = 100 MHz
--------F = 50 MHz
10
4
103
10-1
100
101
102
REVERSE VOLTAGE (V)
TYPICAL FORWARD BIAS INTERMODULATION DISTORTION
VERSUS NOMINAL CARRIER FREQUENCY
DISTORTION BELOW CARRIER (dB)
120
110
100
90
80
70
60
P = 20 dBm per Channel
50
If = 10 mA
40
30
20
1
10
100
Third Oder
Second Order
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL
NOMINAL CARRIER FREQUENCY (MHz)
Copyright
2001
Rev. 0.02, 2006-04-27
Microsemi
Page 4
UM9701
Low Resistance, Low Distortion, RF Switching PIN
Diode
WWW .
Microsemi
.C
OM
TYPICAL THIRD ORDER INTERMODULATION DISTORTION
(R 2ab/a) VERSUS FORWARD BIAS CURRENT
DISTORTION BELOW CARRIER (dB)
120
Fa = 43 MHz
110
Fb = 44 MHz
100
Fb = 7.6 MHz
90
80
70
60
P = 20 dBm per Channel
50
40
30
20
1
10
100
Fa = 7.4 MHz
FORWARD CURRENT (mA)
FORWARD BIAS THIRD ORDER INTERMODULATION
DISTORTION (R 2ab/a) VS INPUT POWER PER CHANNEL
110
DISTORTION BELOW CARRIER (dB)
100
F = 43 MHz
90
F = 44 MHz
80
70
60
50
40
30
20
0
10
20
30
40
F = 7.4 MHz
F = 7.6 MHz
ELECTRICAL
ELECTRICAL
INPUT POWER PER CHANNEL (dBm)
Copyright
2001
Rev. 0.02, 2006-04-27
Microsemi
Page 5
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