电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

UM9601_06

产品描述FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
文件大小489KB,共16页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 选型对比 全文预览

UM9601_06概述

FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES

文档预览

下载PDF文档
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
DESCRIPTION
Description
The UM9601-UM9608 series of PIN diodes
was developed for shunt mount applications in
microstrip circuits. Good switch performance
is demonstrated at frequencies from UHF to 4
GHz and higher. This performance is achieved
using discrete low inductance Microsemi PIN
diodes assembled with special hardware to
permit good electrical and mechanical
compatibility with microstrip transmission
lines.
Design information is presented for
preparation of microstrip circuit boards to
accommodate these PIN diodes. A detailed
design for a 900 MHz quarter-wave antenna
switch is given. This switch which employs a
low cost UM9401 axial leaded PIN diode in
conjunction with a UM9601 performs with 30
dB receiver isolation over a 100 MHz
bandwidth and with a transmitter insertion
loss of less than 0.4 dB. This switch can safely
handle transmitter power levels up to 100
watts at infinite SWR.
The Microsemi UM9601 series PIN diodes are
constructed using a fused-in-glass which results in
a highly reliable, hermetic package. The process
utilizes symmetrical, full faced metallurgical
bonds to both surfaces of the silicon chip. This
construction greatly minimizes the normal
parasitic inductance and capacitance found in
conventional glass or ceramic packaged diodes
which employ straps, springs, or whiskers.
The use of discrete UM9601-UM9608 diodes
greatly minimizes handling problems commonly
associated with passivated PIN diode chips while
maintaining good microwave performance. In
addition the power handling capability of the
UM9601-UM9608 series is considerably higher
than PIN diode chips can provide.
Environmentally, the UM9601-9608 series PIN
diodes can withstand thermal cycling from -195
o
C
to +300
o
C and exceed all military environmental
specifications for shock, vibration, acceleration,
and moisture.
KEY FEATURES
Low Inductance Shunt Mount
Package
Characterized for Microstrip
Microsemi Ruggedness and
Reliability
High Power Handling Capability
Low Bias Current Requirement
Excellent Distortion Properties
Cost Effective in High Quantity
Applications
WWW .
Microsemi
.C
OM
APPLICATIONS/BENEFITS
RoHS compliant packaging
available: use UMX9601, etc.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
Typical Microwave Performance
UM9601-9604
UM9605-UM9608
SPST
SPST
SPNT*
SPST
SPST
SPNT*
Insertion Loss
Isolation
Isolation
Insertion Loss
Isolation
Isolation
Frequency
0 Bias
100 mA
100 mA
0 Bias
100 mA
100 mA
GHz
dB
dB
dB
dB
dB
dB
0.5
0.20
30
36
0.20
25
31
1.0
0.25
26
32
0.20
22
28
1.5
0.35
22
28
0.20
20
26
2.0
0.50
18
24
0.25
17
22
3.0
1.00
15
21
0.25
15
21
4.0
1.50
13
19
0.40
14
20
* Performance based on SPST Measurements in 0.025” (0.635mm) Microstrip Test Circuit.
Note:
All dimensions in inches and (millimeters).
UM9601 SERIES
UM9601 SERIES
Copyright
2005
Rev. 0, 2006-01-17
Microsemi
Page 1

UM9601_06相似产品对比

UM9601_06 UM9601 UM9608
描述 FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
是否Rohs认证 - 不符合 不符合
厂商名称 - Microsemi Microsemi
包装说明 - HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code - unknow unknow
ECCN代码 - EAR99 EAR99
其他特性 - HIGH RELIABILITY HIGH RELIABILITY
应用 - SWITCHING SWITCHING
最小击穿电压 - 100 V 400 V
配置 - SINGLE SINGLE
最大二极管电容 - 1.2 pF 0.5 pF
标称二极管电容 - 1.2 pF 1.2 pF
二极管元件材料 - SILICON SILICON
最大二极管正向电阻 - 0.6 Ω 1.7 Ω
二极管电阻测试电流 - 100 mA 100 mA
二极管电阻测试频率 - 100 MHz 100 MHz
二极管类型 - PIN DIODE PIN DIODE
频带 - ULTRA HIGH FREQUENCY TO S BAND ULTRA HIGH FREQUENCY TO S BAND
JESD-30 代码 - O-LEMW-N2 O-LEMW-N2
少数载流子标称寿命 - 2 µs 2 µs
元件数量 - 1 1
端子数量 - 2 2
最高工作温度 - 175 °C 175 °C
最低工作温度 - -65 °C -65 °C
封装主体材料 - GLASS GLASS
封装形状 - ROUND ROUND
封装形式 - MICROWAVE MICROWAVE
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED
最大功率耗散 - 1.5 W 0.5 W
认证状态 - Not Qualified Not Qualified
反向测试电压 - 100 V 100 V
表面贴装 - YES YES
技术 - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
端子形式 - NO LEAD NO LEAD
端子位置 - END END
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1812  920  2374  2000  1219  8  31  52  42  5 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved