BFR92ALT1
RF PRODUCTS
DIVISION
RF & MICROWAVE TRANSISTORS
DESCRIPTION
KEY FEATURES
W W W .
Microsemi
.COM
The BFR92ALT1 is a low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
!
High FTau-4.5GHz
!
Low noise-3.0dB@500MHz
E
PR
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
R
TH(j-c)
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
Test
I
C
= .1mA
I
C
=10mA
V
CB
= 10V
V
CB
=10V
I
E
= 0
I
B
= 0
I
E
= 0
I
C
= 14mA
Symbol
C
CB
FTau
NF
Test
Copyright
2000
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
!
Low cost SOT23 package
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
Value
20
15
2.0
25
273
150
-55 to +150
Unit
V
V
V
mA
mW
C
C
!
LNA, Oscillator, Pre-Driver
Junction-Case Thermal Resistance
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
V
CB
= 10 V
f
= 1.0 MHz
V
CE
= 10 V I
C
= 14 mA
f
= 500MHz
V
CE
= 1.5 VI
C
= 3.0 mA
f
= 500MHz
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
IN
LIM
THERMAL DATA
275
C/W
SOT-23
BFR92ALT1
Conditions
Min.
20
15
40
Typ.
Max.
50
Units
V
V
nA
Y
AR
Typ.
0.7
4.5
3.0
Max.
Units
PF
GHz
Conditions
Min.
BFR92ALT1
dB
Microsemi
Page 1 of 1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
