2SK3693-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
200305
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol
Ratings
Unit
450
V
DS
V
V
DSX *5
450
V
Equivalent
Continuous drain current
I
D
±17
A
Pulsed drain current
I
D(puls]
±68
A
Gate-source voltage
V
GS
±30
V
Repetitive or non-repetitive
I
AR
*2
17
A
Maximum Avalanche Energy
E
AS
*1
221.9
mJ
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt
*3
5
kV/µs
Gate(G)
°C
Max. power dissipation
P
D
Ta=25
2.16
W
Tc=25°C
80
Operating and storage
T
ch
+150
°C
-55 to +150
temperature range
T
stg
°C
Isolation Voltage
Viso
*6
2000
V
*1 L=1.41mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *2 Tch <150°C
=
*3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C *4 VDS< 450V *5 V
GS
=-30V *6 f=6-Hz, t=60sec.
=
=
=
=
Item
Drain-source voltage
circuit schematic
Drain(D)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=450V V
GS
=0V
T
ch
=25°C
T
ch
=125°C
V
DS
=360V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=8.5A V
GS
=10V
I
D
=8.5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=8.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=225V
I
D
=17A
V
GS
=10V
L=1.41mH T
ch
=25°C
I
F
=17A V
GS
=0V T
ch
=25°C
I
F
=17A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
450
3.0
Typ.
Max.
5.0
25
250
100
0.38
Units
V
V
µA
nA
Ω
S
pF
7
0.29
14
1275
1900
200
300
9.5
14
27
40
27
40
48
72
7
11
33
50
13.5
20.3
10.5
16
1.20
0.57
6.5
ns
nC
17
1.80
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.563
58.0
Units
°C/W
°C/W
1
2SK3693-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
30
80
25
FUJI POWER MOSFET
100
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
20V
10V
8V
60
PD [W]
ID [A]
20
15
40
10
7.5V
7.0V
20
5
VGS=6.5V
0
0
25
50
75
100
125
150
0
0
4
8
12
16
20
Tc [
°
C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
10
ID[A]
1
gfs [S]
1
0
1
2
3
4
5
6
7
8
9
10
0.1
0.1
1
10
VGS[V]
ID [A]
0.9
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
1.0
0.9
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
0.8
VGS=6.5V 7.0V
7.5V
0.8
0.7
0.7
RDS(on) [
Ω
]
RDS(on) [
Ω
]
8V
0.6
0.6
0.5
0.4
typ.
0.3
0.2
max.
0.5
10V
20V
0.4
0.3
0.1
0.2
0
5
10
15
20
25
30
35
0.0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3693-01MR
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=17A,Tch=25
°
C
12
max.
Vcc= 90V
225V
360V
5.0
10
VGS(th) [V]
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
Tch [
°
C]
Qg [nC]
10
1
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
10
0
Ciss
10
C [nF]
10
-1
Coss
IF [A]
1
3
10
-2
Crss
10
-3
10
-1
10
0
10
1
10
2
10
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
Ω
600
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=45V
I
AS
=7A
tf
500
10
2
td(off)
400
I
AS
=11A
E
AS
[mJ]
0
1
t [ns]
300
I
AS
=17A
200
td(on)
10
1
tr
100
10
0
0
10
-1
10
10
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3693-01MR
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=45V
Single Pulse
Avalanche Current I
AV
[A]
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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