ASMT-Mx00
Moonstone
TM
1 W Power LED Light Source
Data Sheet
Description
The Moonstone
TM
1W Power LED Light Source is a high
performance energy efficient device which can handle
high thermal and high driving current. The exposed pad
design has excellent heat transfer from the package to
the motherboard.
The low profile package design is suitable for a wide
variety of applications especially where height is a
constraint.
The package is compatible with reflow soldering
process. This will give more freedom and flexibility to
the light source designer.
Features
•
Available in Red, Amber, Green, and Blue color.
•
Energy efficient
•
Exposed pad for excellent heat transfer
•
•
•
•
•
•
•
•
Suitable for reflow soldering process
High current operation
Long operation life
Wide viewing angle
Silicone encapsulation
ESD Class HBM Class 3B (threshold > 8 kV)
MSL 2A for InGaN products
MSL 4 for AlInGaP products
Applications
•
Portable (flash light, bicycle head light)
•
Reading light
•
Architectural lighting
•
Garden lighting
•
Decorative lighting
Specifications
•
AllnGaP technology for Red and Amber
•
2.1V (typ) at 350mA for AllnGaP
•
InGaN technology for Green and Blue
•
3.2V (typ) at 350mA for InGaN
Package Dimensions
10.00
1
Anode
2 Cathode
3
Heat Sink
3.30
8.50
Metal Slug
3
Ø 5.26
8.50
Ø 8.00
1.27
10.60
LED
+
−
ZENER
2.00
1.30
1
5.08
2
0.81
5.25
Notes:
1. All dimensions are in millimeters.
2. Tolerance is ±0.1 mm, unless otherwise specified.
3. Metal slug is connected to anode for electrically non-isolated option.
Device Selection Guide ( T
j
= 25
°C)
Luminous Flux,
f
V[1,2]
(lm)
Part Number
ASMT-MR00-AHJ00
ASMT-MA00-AGH00
ASMT-MA00-AHJ00
ASMT-MG00-NJK00
ASMT-MG00-NLM00
ASMT-MB00-NDF00
Blue
Green
Color
Red
Amber
Min.
33.0
25.5
33.0
43.0
73.0
11.5
Typ.
40.0
35.0
40.0
60.0
85.0
15.0
Max.
56.0
43.0
56.0
73.0
124.0
25.5
Test Current
(mA)
350
350
350
350
350
350
Dice
Technology
AlInGaP
AlInGaP
AllnGaP
InGaN
InGaN
InGaN
Notes
1.
f
V
is the total luminous flux output as measured with an integrating sphere at 25 ms mono pulse condition.
2. Flux tolerance is ± 10%.
2
Part Numbering System
ASMT-M x xx – x x
1
x
2
x
3
x
4
Packaging Option
Color Bin Selection
Maximum Flux Bin Selection
Minimum Flux Bin Selection
Dice Type
N – InGaN
A – AllnGaP
Silicone Type
00 – Non-di used
Color
R – Red
A – Amber
G - Green
B - Blue
Note:
1. For selection details, see page 8.
Absolute Maximum Ratings (T
A
= 25
°C)
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation
LED Junction Temperature
Operating Ambient Temperature Range at 350 mA
Storage Temperature Range
Soldering Temperature
Reverse Volttage
[3]
AllnGaP
350
1000
805
125
-40 to +115
-40 to +120
InGaN
350
1000
1225
110
-40 to +100
-40 to +120
See Figure 17
Not recommended
Units
mA
mA
mW
°C
°C
°C
Notes:
1. DC forward current – derate linearly based on Figure 5 for AlInGaP and Figure 13 for InGaN.
2. Pulse condition duty factor = 10%, Frequency = 1 kHz.
3. Not recommended for reverse bias operation.
3
Optical Characteristics at 350 mA (T
J
= 25
°C)
Peak Wavelength,
λ
PEAK
(nm)
Part Number
ASMT-MR00-AHJ00
ASMT-MA00-AGH00
ASMT-MA00-AHJ00
ASMT-MG00-NJK00
ASMT-MG00-NLM00
ASMT-MB00-NDF00
Blue
Green
Dominant Wave-
length, λ
D [1]
(nm)
Typ.
625
590
590
525
525
460
Viewing Angle,
2θ½
[2]
(°)
Typ.
120
120
120
120
120
120
Luminous Efficiency
(lm/W)
Typ.
54
48
54
54
76
13
Color
Red
Amber
Typ.
635
598
598
519
519
454
Electrical Characteristic at 350 mA (T
J
= 25
°C)
Forward Voltage V
F
(V) at I
F
= 350 mA
Dice type
AllnGaP
InGaN
Thermal Resistance
Rθ
j-ms
(°C/W)
[1]
Typ.
10
10
Min.
1.7
2.8
Typ.
2.1
3.2
Max.
2.3
3.5
Note:
1. Rθ
j-ms
is Thermal Resistance from LED junction to metal slug.
AlInGaP
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
350
FORWARD CURRENT - mA
RED
AMBER
300
250
200
150
100
50
430
480
530
580
630
WAVELENGTH - nm
680
730
780
0
0
1
2
FORWARD VOLTAGE - V
3
Figure 1. Relative Intensity vs. Wavelength for AlInGaP
1.2
RELATIVE LUMINOUS FLUX
(NORMALIZED AT 350 mA)
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
200
250
DC FORWARD CURRENT - mA
300
350
RELATIVE INTENSITY
Figure 2. Forward Current vs. Forward Voltage for AlInGaP
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
NORMALIZED INTENSITY
-90
-60
-30
0
30
60
ANGULAR DISPLACEMENT - DEGREES
90
Figure 3. Relative Luminous Flux vs. Mono Pulse Current for AlInGaP
4
Figure 4. Radiation Pattern for AlInGaP
AlInGaP
400
MAX ALLOWABLE DC CURRENT - mA
MAX ALLOWABLE DC CURRENT - mA
350
300
250
200
150
100
50
0
0
25
50
75
100
125
AMBIENT TEMPERATURE, T
A
-
°C
150
Rθ
J-A
= 30
°
C/W
Rθ
J-A
= 40
°
C/W
Rθ
J-A
= 50
°
C/W
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
METAL SLUG TEMPERATURE, T
MS
-
°C
150
Rθ
J -MS
= 10
°
C/W
Figure 5. Maximum forward current vs. ambient temperature for AlInGaP
Derated based on T
JMAX
= 125
°C,
Rθ
J-A
= 30
°C/W,
40
°C/W
and 50
°C/W
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
-0.35
-0.40
Figure 6. Maximum Forward Current vs. Metal Slug Temperature for AlInGaP
Derated based on T
JMAX
= 125
°C,
Rθ
J-MS
= 10
°C/W
RELATIVE LIGHT OUTPUT - % (NORMALIZED AT 25 °C)
110.0
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
25
FORWARD VOLTAGE SHIFT - V
(NORMALIZED AT 25 °C)
RED
AMBER
RED
AMBER
125
50
75
100
JUNCTION TEMPERATURE, T
J
-
°C
Figure 7. Forward voltage shift vs. junction temperature for AlInGaP
25
125
50
75
100
JUNCTION TEMPERATURE, T
J
-
°C
Figure 8. Relative Light Output vs. junction temperature for AlInGaP
InGaN
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
GREEN
BLUE
FORWARD CURRENT - mA
350
300
250
200
150
100
50
RELATIVE INTENSITY
430
480
530
580
630
WAVELENGTH - nm
680
730
780
0
0
1
2
FORWARD VOLTAGE - V
3
4
Figure 9. Relative Intensity vs. Wavelength for InGaN
Figure 10. Forward Current vs. Forward Voltage for InGaN
5
stm32/stm8
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