电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IN4937

产品描述1 A, 50 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小182KB,共2页
制造商Good-Ark
官网地址http://www.goodark.com/
下载文档 详细参数 选型对比 全文预览

IN4937概述

1 A, 50 V, SILICON, SIGNAL DIODE

IN4937规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述HERMETIC SEALED PACKAGE-2
状态DISCONTINUED
包装形状
包装尺寸LONG FORM
端子形式线
端子位置AXIAL
包装材料玻璃
结构单一的
壳体连接隔离
二极管元件材料
二极管类型信号二极管
反向恢复时间最大0.2000 us
最大重复峰值反向电压50 V
最大平均正向电流1 A

文档预览

下载PDF文档
1N4933 THRU 1N4937
FAST SWITCHING PLASTIC RECTIFIER
Reverse Voltage -
50 to 600 Volts
Forward Current -
1.0 Ampere
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Construction utilizes void-free molded plastic technique
1.0 ampere operation at T
A
=75 with no thermal
runaway
High temperature soldering guaranteed:
250 /10 seconds, 0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
Case:
DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.33 gram
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.165
0.079
0.028
1.000
Max.
0.205
0.106
0.034
-
Min.
4.2
2.0
0.71
25.40
mm
Max.
5.2
2.7
0.86
-
Note
Mximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Symbols
1N4933
1N4934
1N4935
1N4936
1N4937
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=75
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 mothed) at T
A
=75
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=100
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
R
JA
JL
50
35
50
100
70
100
200
140
200
1.0
30.0
1.2
5.0
100.0
200.0
15.0
55.0
25.0
-50 to +150
400
280
400
600
420
600
Volts
Volts
Volts
Amp
Amps
Volts
A
nS
F
/W
Maximum reverse recovery time (Note 1) T
J
=25
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature range
T
J
, T
STG
Notes:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted
1

IN4937相似产品对比

IN4937 1N4933 1N4934 1N4935 1N4936 1N4937
描述 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1565  1980  1574  345  1067  32  40  7  22  53 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved